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Interlayer coupling in ferromagnetic semiconductor superlattices

T. Jungwirth·W. A. Atkinson·B. H. Lee·A. H. MacDonald
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Abstract

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a Mn$_x$Ga$_{1-x}$As/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.

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T. Jungwirth, W. A. Atkinson, B. H. Lee, A. H. MacDonald. 2000-02-08. Interlayer coupling in ferromagnetic semiconductor superlattices. https://doi.org/10.1103/physrevb.59.9818

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