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Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

S. Das Sarma·E. H. Hwang
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Abstract

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.

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S. Das Sarma, E. H. Hwang. 1999-06-16. Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers. https://doi.org/10.1103/physrevlett.83.164

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