Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

S. V. Kravchenko; D. Simonian; M. P. Sarachik

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Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

S. V. Kravchenko·D. Simonian·M. P. Sarachik

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Abstract

In a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an explanation of the sharp decrease in resistivity at low temperatures which has been attributed to a transition to an unexpected conducting phase in dilute high-mobility two-dimensional systems at B=0. In this Comment, we examine whether their model is supported by the available experimental data.

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S. V. Kravchenko, D. Simonian, M. P. Sarachik. 1998-12-20. Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216). https://arxiv.org/abs/cond-mat/9812331

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