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Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling

Shouvik Datta·M. R. Gokhle·A. P. Shah·T. K. Sharma·B. M. Arora
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Abstract

It is known in the literature that InGaP alloy synthesized within a certain range of growth temperature (520 - 720 degree Centrigrade) shows Cu-Pt crystal ordering. This ordering reduces the band gap energy . It was predicted that the ordering induced modification of energy levels of InGaP lowers its conduction band edge, which could change a type I band alignment at a GaAs/InGaP heterojunction to type II . Here we report the first observation of this ordering related type I/II transition for a GaAs/InGaP heterojunction by C-V profiling experiments done at room temperature .

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Shouvik Datta, M. R. Gokhle, A. P. Shah, T. K. Sharma, B. M. Arora. 1999-03-06. Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling. https://arxiv.org/abs/cond-mat/9903116

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