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Strongly Anisotropic Electronic Transport at Landau Level Filling Factor $ν= 9/2$ and $ν= 5/2$ Under Tilted Magnetic Field

W. Pan·R. R. Du·H. L. Stormer·D. C. Tsui·L. N. Pfeiffer·K. W. Baldwin·K. W. West
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Abstract

We have investigated the influence of an increasing in-plane magnetic field on the states at half-filling of Landau levels ($ν$ = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at $ν$ = 9/2 and 11/2 an in-plane magnetic field of $\sim$ 1-2 T overcomes its initial pinning to the crystal lattice and {\it reorient} this phase. In the initially isotropic phases at $ν$ = 5/2 and 7/2 an in-plane magnetic field {\it induces} a strong electrical anisotropy. In all cases, for high in-plane fields, the high resistance axis is parallel to the direction of the in-plane field.

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W. Pan, R. R. Du, H. L. Stormer, D. C. Tsui, L. N. Pfeiffer, K. W. Baldwin, K. W. West. 1999-03-10. Strongly Anisotropic Electronic Transport at Landau Level Filling Factor $ν= 9/2$ and $ν= 5/2$ Under Tilted Magnetic Field. https://doi.org/10.1103/physrevlett.83.820

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