arXiv · cond-mat/9903238
Metal-insulator transition in CMR materials
Abstract
We report on resistivity measurements in La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ and Nd$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of quantum phase transition ideas to study the nature of the metal-insulator transition in manganese oxides. Resistivity curves as functions of magnetization for various temperatures show the absence of scaling behavior expected in a continuous quantum phase transition, which leads us to conclude that the observed metal-insulator transition is most likely a finite temperature crossover phenomenon.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
V. N. Smolyaninova, X. C. Xie, F. C. Zhang, M. Rajeswari, R. L. Greene, S. Das Sarma. 2000-02-11. Metal-insulator transition in CMR materials. https://arxiv.org/abs/cond-mat/9903238
Cite the original work for its findings. Save a collection to share your selection of sources.