arXiv · cond-mat/9906151
Hall-like effect induced by spin-orbit interaction
Abstract
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave of a proper polarization induces voltage drop perpendicularly to the direct current flow between source and drain of the considered four-terminal cross-structure. The resulting Hall-like resistance is estimated to be of the order of 10^-3 - 10^-2 h/e^2 for technologically available structures. The effect becomes more pronounced in the vicinity of resonances where Hall-like resistance changes its sign as function of the Fermi energy.
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E. N. Bulgakov, K. N. Pichugin, A. F. Sadreev, P. Středa, P. Šeba. 1999-06-10. Hall-like effect induced by spin-orbit interaction. https://doi.org/10.1103/physrevlett.83.376
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