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Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

Jongsoo Yoon·C. C. Li·D. Shahar·D. C. Tsui·M. Shayegan
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Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.

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Jongsoo Yoon, C. C. Li, D. Shahar, D. C. Tsui, M. Shayegan. 1999-07-10. Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs. https://doi.org/10.1103/physrevlett.84.4421

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