Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot

L. P. Rokhinson; L. J. Guo; S. Y. Chou; D. C. Tsui

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arXiv · cond-mat/9908135

Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot

L. P. Rokhinson·L. J. Guo·S. Y. Chou·D. C. Tsui

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Abstract

We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of differential conductance at zero bias. The magnetic field dependence of this zero bias anomaly is very different from the one reported in GaAs quantum dots, inconsistent with predictions for the Kondo effect.

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L. P. Rokhinson, L. J. Guo, S. Y. Chou, D. C. Tsui. 1999-08-09. Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot. https://arxiv.org/abs/cond-mat/9908135

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