arXiv subjects

L. P. Rokhinson

Publications and source records attributed to L. P. Rokhinson.

At least 19 recordsLinked to original sources

arXiv2022

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.

cond-mat.mes-hall↗

arXiv2017

Disorder-generated non-Abelions

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one, in which impurity disorder strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and the other, where Majorana fermions are protected by disorder-robust superconductor gap. In this work we predict a third class of topological superconductivity and Majorana modes, in which they appear exclusively in the presence of impurity disorder. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry leading to a gap in a single-particle spectra. Disorder introduces states into the gap and enables conductance and proximity-induced superconductivity via the in-gap states. We show that disorder-enabled topological superconductivity can be realized in a quantum Hall ferromagnet, when helical domain walls are coupled to an s-wave superconductor. Solving a general quantum mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we show that disorder-induced Majorana modes emerge in a setting of the quantum Hall ferromagnetic transition in a CdMnTe quantum wells at a filling factor $ν=2$. Recent experiments on transport through electrostatically controlled single domain wall in this system indicated the vital role of disorder in conductance, but left an unresolved question whether this could intrinsically preclude generation of Majorana fermions. The proposed resolution of the problem, demonstrating emergence of Majorana fermions exclusively due to impurity disorder, opens a path forward. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana modes. Similar physics can emerge for ferromagnetic transitions in the fractional quantum Hall regime leading to the formation and control of higher order non-Abelian excitations.

cond-mat.mes-hall↗

arXiv2017

Theory of topological excitations and metal-insulator transition in reentrant integer quantum Hall effect

The reentrant integer quantum Hall effects (RIQHE) are due to formation of electronic crystals. We show analytically and numerically that topological textures in the charge density distribution in these crystals in the vicinity of charged defects strongly reduce energy required for current-carrying excitations. The theory quantitatively explains sharp insulator-metal transitions experimentally observed in RIQHE states. The insulator to metal transition in RIQHE emerges as a thermodynamic unbinding transition of topological charged defects.

cond-mat.mes-hall↗

arXiv2012

Contrasting Energy Scales of the Reentrant Integer Quantum Hall States

We report drastically different onset temperatures of the reentrant integer quantum Hall states in the second and third Landau level. This finding is in quantitative disagreement with the Hartree-Fock theory of the bubble phases which is thought to describe these reentrant states. Our results indicate that the number of electrons per bubble in either the second or the third Landau level is likely different than predicted.

cond-mat.str-el↗

arXiv2011

Anomalous spin-resolved point-contact transmission of holes due to cubic Rashba spin-orbit coupling

Evidence is presented for the finite wave vector crossing of the two lowest one-dimensional spin-split subbands in quantum point contacts fabricated from two-dimensional hole gases with strong spin-orbit interaction. This phenomenon offers an elegant explanation for the anomalous sign of the spin polarization filtered by a point contact, as observed in magnetic focusing experiments. Anticrossing is introduced by a magnetic field parallel to the channel or an asymmetric potential transverse to it. Controlling the magnitude of the spin-splitting affords a novel mechanism for inverting the sign of the spin polarization.

cond-mat.mes-hall↗

arXiv2009

Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field

Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magnetic materials into devices and circuit processing information is a lack of efficient means to control their magnetization. This is usually achieved with an external magnetic field or by the injection of spin-polarized currents. The latter can be significantly enhanced in materials whose ferromagnetic properties are mediated by charge carriers. Among these materials, conductors lacking spatial inversion symmetry couple charge currents to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin polarization tunable by local electric fields. Here we show that magnetization of a ferromagnet can be reversibly manipulated by the SO-induced polarization of carrier spins generated by unpolarized currents. Specifically, we demonstrate domain rotation and hysteretic switching of magnetization between two orthogonal easy axes in a model ferromagnetic semiconductor.

cond-mat.mtrl-sci↗

arXiv2008

Valley splitting in Si quantum dots embedded in SiGe

We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses <6 nm valley splitting is found to be >150 ueV. Using the unique advantage of atomistic calculations we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5, the splitting fluctuates with ~20 ueV for different disorder realizations. Through these simulations we can guide future experiments into regions of low device-to-device fluctuations.

cond-mat.mes-hall↗

arXiv2008

Anisotropic modification of the effective hole $g$-factor by electrostatic confinement

We investigate effects of lateral confinement on spin splitting of energy levels in 2D hole gases grown on [311] GaAs. We found that lateral confinement enhances anisotropy of spin splitting relative to the 2D gas for both confining directions. Unexpectedly, the effective $g$-factor does not depend on the 1D energy level number $N$ for $B\|[0\bar{1}1]$ while it has strong $N$-dependence for $B\|[\bar{2}33]$. Apart from quantitative difference in the spin splitting of energy levels for the two orthogonal confinement directions we also report qualitative differences in the appearance of spin-split plateaus, with non-quantized plateaus observed only for the confinement in $[0\bar{1}1]$ direction. In our samples we can clearly associate the difference with anisotropy of spin-orbit interactions.

cond-mat.mes-hall↗

arXiv2008

GaMnAs-based hybrid multiferroic memory device

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnetization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we report a novel non-volatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.

cond-mat.mtrl-sci↗

arXiv2007

Weak localization in GaMnAs: evidence of impurity band transport

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material.

cond-mat.mes-hall↗

arXiv2006

Spontaneous spin polarization in quantum point contacts

We use spatial spin separation by a magnetic focusing technique to probe the polarization of quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs heterostructures. A finite polarization is measured in the low-density regime, when the conductance of a point contact is tuned to <2e^2/h. Polarization is stronger in samples with a well defined ``0.7 structure''

cond-mat.mes-hall↗

arXiv2004

Spin separation in cyclotron motion

Charged carriers with different spin states are spatially separated in a two-dimensional hole gas. Due to strong spin-orbit interaction holes at the Fermi energy have different momenta for two possible spin states travelling in the same direction and, correspondingly, different cyclotron orbits in a weak magnetic field. Two point contacts, acting as a monochromatic source of ballistic holes and a narrow detector in the magnetic focusing geometry are demonstrated to work as a tunable spin filter.

cond-mat.mes-hall↗

arXiv2003

AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

Recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 10^6 cm^2/Vs at 4.2 K) 2D hole gas just 350A below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows 9 quantum steps at 50 mK.

cond-mat.mes-hall↗

arXiv2001

Coherent electron transport in a Si quantum dot dimer

We show that the coherence of charge transfer through a weakly coupled double-dot dimer can be determined by analyzing the statistics of the conductance pattern, and does not require large phase coherence length in the host material. We present an experimental study of the charge transport through a small Si nanostructure, which contains two quantum dots. The transport through the dimer is shown to be coherent. At the same time, one of the dots is strongly coupled to the leads, and the overall transport is dominated by inelastic co-tunneling processes.

cond-mat.mes-hall↗

arXiv2001

Magnetically-induced reconstructions of the ground state in a few-electron Si quantum dot

We report unexpected fluctuations in the positions of Coulomb blockade peaks at high magnetic fields in a small Si quantum dot. The fluctuations have a distinctive saw-tooth pattern: as a function of magnetic field, linear shifts of peak positions are compensated by abrupt jumps in the opposite direction. The linear shifts have large slopes, suggesting formation of the ground state with a non-zero angular momentum. The value of the momentum is found to be well defined, despite the absence of the rotational symmetry in the dot.

cond-mat.mes-hall↗

arXiv2000

Spin transitions in a small Si quantum dot

We have studied the magnetic field dependence of the ground state energies in a small Si quantum dot. At low fields the first five electrons are added in a spin-up -- spin-down sequence minimizing the total spin. This sequence does not hold for larger number of electrons in the dot. At high fields the dot undergoes transitions between states with different spins driven entirely by Zeeman energy. We identify some features that can be attributed to transitions between different spin configurations preserving the total spin of the dot. For a few peaks we observed large linear shifts that correspond to the change of the spin of the dot by 3/2. Such a change requires that an electron in the dot flips its spin during every tunneling event.

cond-mat.mes-hall↗

arXiv2000

Double-dot charge transport in Si single electron/hole transistors

We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined dot. At T<4K, current through the devices is characterized by multidot transport. From the analysis of the transport in samples with double-dot characteristics, we conclude that extra dots are formed inside the thermally grown gate oxide which surrounds the lithographically defined dot.

cond-mat.mes-hall↗

arXiv1999

Non-Kondo zero bias anomaly in electronic transport through an ultra-small Si quantum dot

We have studied low-temperature single electron transport through ultra-small Si quantum dots. We find that at low temperatures Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of differential conductance at zero bias. The magnetic field dependence of this zero bias anomaly is very different from the one reported in GaAs quantum dots, inconsistent with predictions for the Kondo effect.

cond-mat.mes-hall↗