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Field emission properties of nano-composite carbon nitride films

I. Alexandrou·M. Baxendale·G. A. J. Amaratunga·N. L. Rupesinghe·C. J. Kiely
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Abstract

A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.

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I. Alexandrou, M. Baxendale, G. A. J. Amaratunga, N. L. Rupesinghe, C. J. Kiely. 1999-09-08. Field emission properties of nano-composite carbon nitride films. https://doi.org/10.1116/1.1322043

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