Field emission properties of nano-composite carbon nitride films
A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.
cond-mat.mtrl-sci↗