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Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

D. Ferrand·J. Cibert·C. Bourgognon·S. Tatarenko·A. Wasiela·G. Fishman·A. Bonanni·H. Sitter·S. Kolesnik·J. Jaroszynski·A. Barcz·T. Dietl
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Abstract

p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.

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D. Ferrand, J. Cibert, C. Bourgognon, S. Tatarenko, A. Wasiela, G. Fishman, A. Bonanni, H. Sitter, S. Kolesnik, J. Jaroszynski, A. Barcz, T. Dietl. 1999-10-08. Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers. https://doi.org/10.1063/1.372735

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