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Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

V. Senz·T. Heinzel·T. Ihn·K. Ensslin·G. Dehlinger·D. Gruetzmacher·U. Gennser
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Abstract

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

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V. Senz, T. Heinzel, T. Ihn, K. Ensslin, G. Dehlinger, D. Gruetzmacher, U. Gennser. 1999-10-15. Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells. https://doi.org/10.1103/physrevb.61.r5082

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