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arXiv · hep-ex/0003032

Capacitance of Silicon Pixels

Grant Gorfine·Martin Hoeferkamp·Geno Santistevan·Sally Seidel
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Abstract

Capacitance measurements have been made on silicon pixel sensors of types n+ on n, p+ on n, and n+ on p. The arrays test a variety of implant and gap widths, and the n+ on n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2.

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Grant Gorfine, Martin Hoeferkamp, Geno Santistevan, Sally Seidel. 2000-03-28. Capacitance of Silicon Pixels. https://doi.org/10.1016/s0168-9002(00)01081-0

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