arXiv · hep-ex/0111094
Single Event Effects in the Pixel readout chip for BTeV
Abstract
In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.
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G. Chiodini, J. A. Appel, G. Cardoso, D. C. Christian, M. R. Coluccia, J. Hoff, S. W. Kwan, A. Mekkaoui, R. Yarema, S. Zimmermann. 2001-11-29. Single Event Effects in the Pixel readout chip for BTeV. https://doi.org/10.1016/s0168-9002(02)02030-2
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