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arXiv · hep-ex/9911048

Analysis of trap spectra in LEC and epitaxial GaAs

J. Vaitkus·E. Gaubas·V. Kazukauskas·V. Rinkevicius·J. Storasta·R. Tomasiunas·K. M. Smith·V. O'Shea
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Abstract

Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.

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J. Vaitkus, E. Gaubas, V. Kazukauskas, V. Rinkevicius, J. Storasta, R. Tomasiunas, K. M. Smith, V. O'Shea. 1999-11-30. Analysis of trap spectra in LEC and epitaxial GaAs. https://doi.org/10.1016/s0168-9002(99)00433-7

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