Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

I. Lazanu; S. Lazanu

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Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

I. Lazanu·S. Lazanu

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Abstract

This report is a compilation of authors' calculations of the Lindhard factors, and of the concentration of primary radiation defects per unit particle fluence in different materials for HEP uses.

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I. Lazanu, S. Lazanu. 2003-01-13. Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP. https://arxiv.org/abs/hep-ph/0301080

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