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First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions

Miron J. Cristea
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Abstract

Based on semiconductor materials fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused -Gaussian profile- semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions.

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Miron J. Cristea. 2006-11-03. First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions. https://arxiv.org/abs/math-ph/0609004

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