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Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW

S. D. Ganichev·E. L. Ivchenko·H. Ketterl·L. E. Vorobjev·W. Prettl
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Abstract

The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurence of the linear photogalvanic effect indicate a reduced point symmetry of studied multi-layered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.

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S. D. Ganichev, E. L. Ivchenko, H. Ketterl, L. E. Vorobjev, W. Prettl. 2000-08-01. Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW. https://doi.org/10.1063/1.1326488

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