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A measurement of Lorentz Angle of radiation-hard Pixel Sensors

M. Aleppo
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Abstract

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

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M. Aleppo. 2000-12-20. A measurement of Lorentz Angle of radiation-hard Pixel Sensors. https://doi.org/10.1016/s0168-9002(01)00364-3

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