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Pt-based metallization of PMOS devices for the fabrication of monolithic semiconducting/YBa2Cu3O7-d superconducting devices on silicon

Guillaume Huot·Laurence Mechin·Daniel Bloyet
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Abstract

Mo, Pt, Pt/Mo and Pt/Ti thin films have been deposited onto Si and SiO2 substrates by RF sputtering and annealed in the YBa2Cu3O7-d growth conditions. The effect of annealing on the sheet resitance of unpatterned layers was measured. A Pt-based multilayered metallization for the PMOS devices was proposed and tested for the monolithic integration of PMOS devices and YBCO sensors on the same silicon substrate. The best results were obtained with a Pt/Ti/Mo-silicide structure showing (0.472 Ω_{\Box}) interconnect sheet resistivity and $ 2 \times 10^{-4} Ω\cdot cm^{2}$ specific contact resistivity after annealing for (60) minutes at (700^{\circ})C in (0.5) mbar O(_{2}) pressure.

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Guillaume Huot, Laurence Mechin, Daniel Bloyet. 2003-05-21. Pt-based metallization of PMOS devices for the fabrication of monolithic semiconducting/YBa2Cu3O7-d superconducting devices on silicon. https://arxiv.org/abs/physics/0305096

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