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A finite element analysis of a silicon based double quantum dot structure

S. Rahman·J. Gorman·C. H. W. Barnes·D. A. Williams·H. P. Langtangen
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Abstract

We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for charge and spin-based quantum computation in the solid state, as demonstrated by recent coherent-charge oscillation experiments. Our key findings demonstrate control of the electric potential and electric field in the vicinity of the double quantum-dot by the electric potential applied to the in-plane gates. This constitutes a useful theoretical analysis of the silicon-based architecture for quantum information processing applications.

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S. Rahman, J. Gorman, C. H. W. Barnes, D. A. Williams, H. P. Langtangen. 2006-04-06. A finite element analysis of a silicon based double quantum dot structure. https://doi.org/10.1103/physrevb.73.233307

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