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A. Bendounan

Publications and source records attributed to A. Bendounan.

18 recordsLinked to original sources

About carrier's self-trapping and dynamical Rashba splitting in the two-dimensional hybrid perovskite (BA)$_2$(MA)$_2$Pb$_3$I$_{10}$

Time- and Angle-Resolved Photoelectron Spectroscopy (tr-ARPES) is employed to monitor photoexcited electrons in the two-dimensional hybrid perovskite (BA)$_2$(MA)$_2$Pb$_3$I$_{10}$. Photoelectron intensity maps are in good agreement with ab-initio calculations of the band structure. The effective mass is $-0.18 \pm 0.02 m_e$ and $0.12 \pm 0.02 m_e$ for holes and electrons, respectively. In the photoexcited state, spin-orbit splitting of the conduction band cannot be resolved. This sets the upper bound of photoinduced Rashba coupling to $α_C<2.5$ eVÅ. The correlated electron-hole plasma evolves in Wannier excitons with Bohr radius of 2.8 nm, while no sign of self-trapping in small polarons is found within the investigated time window of up to 120 ps following photoexcitation.

cond-mat.other

Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2

Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials.

cond-mat.str-el

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

A combination of micro-Raman spectroscopy and micro-XPS (X-ray photo-electron spectroscopy) mapping on statically deflected p-type silicon cantilevers is used to study the mechanical stress dependence of the Fermi level pinning at an oxidized silicon (001) surface. With uniaxial compressive and tensile stress applied parallel to the $\langle$110$\rangle$ crystal direction, the observations are relevant to the electronic properties of strain-silicon nano-devices with large surface-to-volume ratios such as nanowires and nanomembranes. The surface Fermi level pinning is found to be even in applied stress, a fact that may be related to the symmetry of the Pb$_0$ silicon/oxide interface defects. For stresses up to 160 MPa, an increase in the pinning energy of 0.16 meV/MPa is observed for compressive stress, while for tensile stress it increases by 0.11 meV/MPa. Using the bulk, valence band deformation potentials the reduction in surface band bending in compression (0.09 meV/MPa) and in tension (0.13 meV/MPa) can be estimated.

cond-mat.mes-hall

Compelling experimental evidence of a Dirac cone in the electronic structure of a 2D Silicon layer

The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon layer on Au(111) using low energy electron diffraction (LEED), high resolution angle-resolved photoemission spectroscopy (HR-ARPES), and scanning tunneling microscopy (STM). The HR-ARPES data show compelling evidence that the silicon based 2D overlayer is responsible for the observed linear dispersed feature in the valence band, with a Fermi velocity of v_F ~10^(+6) m.s^(-1) comparable to that of graphene. The STM images show extended and homogeneous domains, offering a viable route to the fabrication of silicene-based opto-electronic devices.

cond-mat.mtrl-sci

Electron scattering, charge order, and pseudogap physics in La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$: An angle resolved photoemission spectroscopy study

We report an angle-resolved photoemission study of the charge stripe ordered La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ system. A comparative and quantitative line shape analysis is presented as the system evolves from the overdoped regime into the charge ordered phase. On the overdoped side ($x=0.20$), a normal state anti-nodal spectral gap opens upon cooling below ~ 80 K. In this process spectral weight is preserved but redistributed to larger energies. A correlation between this spectral gap and electron scattering is found. A different lineshape is observed in the antinodal region of charge ordered Nd-LSCO $x=1/8$. Significant low-energy spectral weight appears to be lost. These observations are discussed in terms of spectral weight redistribution and gapping %of spectral weight originating from charge stripe ordering.

cond-mat.supr-con

Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.

cond-mat.mtrl-sci

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

cond-mat.mtrl-sci

Bimagnon studies in cuprates with Resonant Inelastic X-ray Scattering at the O K edge. II - The doping effect in La2-xSrxCuO4

We present RIXS data at O K edge from La2-xSrxCuO4 vs. doping between x=0.10 and x=0.22 with attention to the magnetic excitations in the Mid-Infrared region. The sampling done by RIXS is the same as in the undoped cuprates provided the excitation is at the first pre-peak induced by doping. Note that this excitation energy is about 1.5 eV lower than that needed to see bimagnons in the parent compound. This approach allows the study of the upper region of the bimagnon continuum around 450 meV within about one third of the Brilluoin Zone around Γ. The results show the presence of damped bimagnons and of higher even order spin excitations with almost constant spectral weight at all the dopings explored here. The implications on high Tc studies are briefly addressed.

cond-mat.supr-con

Low-Energy Scale Excitations in the Spectral Function of Organic Monolayer Systems

Using high-resolution photoemission spectroscopy we demonstrate that the electronic structure of several organic monolayer systems, in particular 1,4,5,8-naphthalene tetracarboxylic dianhydride and Copper-phtalocyanine on Ag(111), is characterized by a peculiar excitation feature right at the Fermi level. This feature displays a strong temperature dependence and is immediatly connected to the binding energy of the molecular states, determined by the coupling between the molecule and the substrate. At low temperatures, the line-width of this feature, appearing on top of the partly occupied lowest unoccupied molecular orbital of the free molecule, amounts to only $\approx 25$ meV, representing an unusually small energy scale for electronic excitations in these systems. We discuss possible origins, related e.g. to many-body excitations in the organic-metal adsorbate system, in particular a generalized Kondo scenario based on the single impurity Anderson model.

cond-mat.str-el

Artificial Kagome Arrays of Nanomagnets: A Frozen Dipolar Spin Ice

Magnetic frustration effects in artificial kagome arrays of nanomagnets are investigated using x-ray photoemission electron microscopy and Monte Carlo simulations. Spin configurations of demagnetized networks reveal unambiguous signatures of long range, dipolar interaction between the nanomagnets. As soon as the system enters the spin ice manifold, the kagome dipolar spin ice model captures the observed physics, while the short range kagome spin ice model fails.

cond-mat.mes-hall

Anomalies in the Fermi surface and band dispersion of quasi-one-dimensional CuO chains in the high-temperature superconductor YBa2Cu4O8

We have investigated the electronic states in quasi one dimensional (1D) CuO chains by microprobe Angle Resolved Photoemission Spectroscopy. We find that the quasiparticle Fermi surface consists of six disconnected segments, consistent with recent theoretical calculations that predict the formation of narrow, elongated Fermi surface pockets for coupled CuO chains. In addition, we find a strong renormalization effect with a significant kink structure in the band dispersion. The properties of this latter effect [energy scale (~40 meV), temperature dependence and behavior with Zn-doping] are identical to those of the bosonic mode observed in CuO2 planes of high temperature superconductors, indicating they have a common origin.

cond-mat.supr-con

Anisotropic quasiparticle scattering rates in slightly underdoped to optimally doped high-temperature \LSCO\ superconductors

An angle-resolved photoemission study of the scattering rate in the superconducting phase of the high-temperature superconductor \LSCO\ with $x=0.145$ and $x=0.17$, as a function of binding energy and momentum, is presented. We observe that the scattering rate scales linearly with binding energy up to the high-energy scale $E_1\sim0.4$ eV. The scattering rate is found to be strongly anisotropic, with a minimum along the (0,0)-($π,π$) direction. A possible connection to a quantum-critical point is discussed.

cond-mat.supr-con

Anomalous asymmetry of the Fermi surface in the YBa2Cu4O8 high temperature superconductor revealed by Angle Resolved Photoemission Spectroscopy

We use microprobe Angle-Resolved Photoemission Spectroscopy to study the Fermi surface and band dispersion of the CuO2 planes in the high temperature superconductor, YBa2Cu4O8. We find a strong in-plane asymmetry of the electronic structure between directions along a and b axes. The saddle point of the antibonding band lies at a significantly higher energy in the a direction (pi,0) than the b direction (0,pi), whereas the bonding band displays the opposite behavior. We demonstrate that the abnormal band shape is due to a strong asymmetry of the bilayer band splitting, likely caused by a non-trivial hybridization between the planes and chains. This asymmetry has an important implication for interpreting key properties of the Y-Ba-Cu-O (YBCO) family, especially the superconducting gap, transport and results of inelastic neutron scattering.

cond-mat.supr-con

Electronic structure near the 1/8-anomaly in La-based cuprates

We report an angle resolved photoemission study of the electronic structure of the pseudogap state in \NdLSCO ($T_c<7$ K). Two opposite dispersing Fermi arcs are the main result of this study. The several scenarios that can explain this observation are discussed.

cond-mat.supr-con

Spectroscopic evidence for preformed Cooper pairs in the pseudogap phase of cuprates

Angle-resolved photoemission on underdoped La$_{1.895}$Sr$_{0.105}$CuO$_4$ reveals that in the pseudogap phase, the dispersion has two branches located above and below the Fermi level with a minimum at the Fermi momentum. This is characteristic of the Bogoliubov dispersion in the superconducting state. We also observe that the superconducting and pseudogaps have the same d-wave form with the same amplitude. Our observations provide direct evidence for preformed Cooper pairs, implying that the pseudogap phase is a precursor to superconductivity.

cond-mat.supr-con

The coherent {\it d}-wave superconducting gap in underdoped La$_{2-x}$Sr$_{x}$CuO$_4$ as studied by angle-resolved photoemission

We present angle-resolved photoemission spectroscopy (ARPES) data on moderately underdoped La$_{1.855}$Sr$_{0.145}$CuO$_4$ at temperatures below and above the superconducting transition temperature. Unlike previous studies of this material, we observe sharp spectral peaks along the entire underlying Fermi surface in the superconducting state. These peaks trace out an energy gap that follows a simple {\it d}-wave form, with a maximum superconducting gap of 14 meV. Our results are consistent with a single gap picture for the cuprates. Furthermore our data on the even more underdoped sample La$_{1.895}$Sr$_{0.105}$CuO$_4$ also show sharp spectral peaks, even at the antinode, with a maximum superconducting gap of 26 meV.

cond-mat.supr-con

Origins of large critical temperature variations in single layer cuprates

We study the electronic structures of two single layer superconducting cuprates, Tl$_2$Ba$_2$CuO$_{6+δ}$ (Tl2201) and (Bi$_{1.35}$Pb$_{0.85}$)(Sr$_{1.47}$La$_{0.38}$)CuO$_{6+δ}$ (Bi2201) which have very different maximum critical temperatures (90K and 35K respectively) using Angular Resolved Photoemission Spectroscopy (ARPES). We are able to identify two main differences in their electronic properties. First, the shadow band that is present in double layer and low T$_{c,max}$ single layer cuprates is absent in Tl2201. Recent studies have linked the shadow band to structural distortions in the lattice and the absence of these in Tl2201 may be a contributing factor in its T$_{c,max}$.Second, Tl2201's Fermi surface (FS) contains long straight parallel regions near the anti-node, while in Bi2201 the anti-nodal region is much more rounded. Since the size of the superconducting gap is largest in the anti-nodal region, differences in the band dispersion at the anti-node may play a significant role in the pairing and therefore affect the maximum transition temperature.

cond-mat.supr-con

The electronic structure of La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ probed by high- and low-energy angle-resolved photoelectron spectroscopy: evolution with probing depth

We present angle-resolved photoelectron spectroscopy data probing the electronic structure of the Nd-substituted high-$T_c$ cuprate La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (Nd-LSCO). Data have been acquired at low and high photon energies, $hν$ = 55 and 500 eV, respectively. Earlier comparable low-energy studies of La$_{1.4-x}$Nd$_{0.6}$Sr$_{x}$CuO$_4$ ($x = 0.10, 0.12, 0.15$) have shown strongly suppressed photoemission intensity, or absence thereof, in large parts of the Brillouin zone. Contrary to these findings we observe spectral weight at all points along the entire Fermi surface contour at low and high photon energies. No signs of strong charge modulations are found. At high photon energy, the Fermi surface shows obvious differences in shape as compared to the low-energy results presented here and in similar studies. The observed difference in shape and the high bulk-sensitivity at this photon energy suggest intrinsic electronic structure differences between the surface and bulk regions.

cond-mat.str-el