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arXiv · 1302.4603

Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

J. E. Rault·G. Agnus·T. Maroutian·V. Pillard·Ph. Lecoeur·G. Niu·B. Vilquin·M. G. Silly·A. Bendounan·F. Sirotti·N. Barrett
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Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

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J. E. Rault, G. Agnus, T. Maroutian, V. Pillard, Ph. Lecoeur, G. Niu, B. Vilquin, M. G. Silly, A. Bendounan, F. Sirotti, N. Barrett. 2013-02-19. Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias. https://doi.org/10.1103/physrevb.87.155146

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