arXiv subjects

A. C. Gossard

Publications and source records attributed to A. C. Gossard.

At least 127 records · Page 7Linked to original sources

arXiv2005

Demonstration of electron filtering to increase the Seebeck coefficient in ErAs:InGaAs/InGaAlAs superlattices

In this letter, we explore electron filtering as a technique to increase Seebeck coefficient and the thermoelectric power factor of heterostructured materials over that of the bulk. We present a theoretical model in which Seebeck coefficient and the power factor can be increased in an InGaAs based composite material. Experimental measurements of the cross-plane Seebeck coefficient are presented and confirm the importance of the electron filtering technique to decouple the electrical conductivity and Seebeck coefficient to increase the thermoelectric power factor.

cond-mat.mtrl-sci↗

arXiv2005

Charge and spin manipulation in a few-electron double dot

We demonstrate high speed manipulation of a few-electron double quantum dot. In the one-electron regime, the double dot forms a charge qubit. Microwaves are used drive transitions between the (1,0) and (0,1) charge states of the double dot. A local quantum point contact charge detector measures the photon-induced change in occupancy of the charge states. Charge detection is used to measure T1~16 ns and also provides a lower bound estimate for T2* of 400 ps for the charge qubit. In the two-electron regime we use pulsed-gate techniques to measure the singlet-triplet relaxation time for nearly-degenerate spin states. These experiments demonstrate that the hyperfine interaction leads to fast spin relaxation at low magnetic fields. Finally, we discuss how two-electron spin states can be used to form a logical spin qubit.

cond-mat.mes-hall↗

arXiv2005

Enhancement of Spin Coherence using Q-factor Engineering in Semiconductor Microdisk Lasers

Semiconductor microcavities offer unique means of controlling light-matter interactions, which have led to the development of a wide range of applications in optical communications and inspired proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities - a new and promising research field - have revealed novel effects such as polarization beats, stimulated spin scattering, and giant Faraday rotation. Here, we study the electron spin dynamics in optically-pumped GaAs microdisk lasers with quantum wells (QWs) and interface-fluctuation quantum dots (QDs) in the active region. In particular, we address the question of how the electron spin dynamics are modified by the stimulated emission in the disks, and observe an enhancement of the spin lifetime when the optical excitation is in resonance with a high quality (Q ~ 5000) lasing mode. This resonant enhancement, contrary to what is expected from the Purcell effect observed in the cavities, is then manipulated by altering the cavity design and dimensions.

cond-mat.mtrl-sci↗

arXiv2005

Origin of the inner ring in photoluminescence patterns of quantum well excitons

In order to explain and model the inner ring in photoluminescence (PL) patterns of indirect excitons in GaAs/AlGaAs quantum wells (QWs), we develop a microscopic approach formulated in terms of coupled nonlinear equations for the diffusion, thermalization and optical decay of the particles. The origin of the inner ring is unambiguously identified: it is due to cooling of indirect excitons in their propagation from the excitation spot. We infer that in our high-quality structures the in-plane diffusion coefficient is about 10-30cm^2/s and the amplitude of the disorder potential is about 0.45meV.

cond-mat.other↗

arXiv2005

Asymmetry of Nonlinear Transport and Electron Interactions in Quantum Dots

The symmetry properties of transport beyond the linear regime in chaotic quantum dots are investigated experimentally. A component of differential conductance that is antisymmetric in both applied source-drain bias V and magnetic field B, absent in linear transport, is found to exhibit mesoscopic fluctuations around a zero average. Typical values of this component allow a measurement of the electron interaction strength.

cond-mat.mes-hall↗

arXiv2005

Two-stage Kondo effect in a four-electron artificial atom

An artificial atom with four electrons is driven through a singlet-triplet transition by varying the confining potential. In the triplet, a Kondo peak with a narrow dip at drain-source voltage V_ds=0 is observed. The low energy scale V_ds* characterizing the dip is consistent with predictions for the two-stage Kondo effect. The phenomenon is studied as a function of temperature T and magnetic field B, parallel to the two-dimensional electron gas. The low energy scales T* and B* are extracted from the behavior of the zero-bias conductance and are compared to the low energy scale V_ds* obtained from the differential conductance. Good agreement is found between kT* and |g|muB*, but eV_ds* is larger, perhaps because of nonequilibrium effects.

cond-mat.mes-hall↗

arXiv2005

Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information processing. This coupling can be regulated with quantum confinement in semiconductor heterostructures through band structure engineering. Here we investigate the spin Hall effect and current-induced spin polarization in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements, the spin Hall profile exhibits complex structure, and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magnetic materials.

cond-mat.mes-hall↗

arXiv2005

Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot

The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the electron spin to its orbital motion or to nuclear spins. Relaxation of confined electron spin has been previously measured only for Zeeman or exchange split spin states, where spin-orbit effects dominate relaxation, while spin flips due to nuclei have been observed in optical spectroscopy studies. Using an isolated GaAs double quantum dot defined by electrostatic gates and direct time domain measurements, we investigate in detail spin relaxation for arbitrary splitting of spin states. Results demonstrate that electron spin flips are dominated by nuclear interactions and are slowed by several orders of magnitude when a magnetic field of a few millitesla is applied. These results have significant implications for spin-based information processing.

cond-mat.mes-hall↗

arXiv2005

Conductance Fluctuations and Spin Symmetries in Quantum Dots

Conductance fluctuations in GaAs quantum dots with spin-orbit and Zeeman coupling are investigated experimentally and compared to a random matrix theory formulation that defines a number of regimes of spin symmetry depending on experimental parameters. Accounting for orbital coupling of the in-plane magnetic field, which can break time-reversal symmetry, yields excellent overall agreement between experiment and theory.

cond-mat.mes-hall↗

arXiv2005

Probing the Kondo density of states in a three-terminal quantum ring

We have measured the Kondo effect in a quantum ring connected to three terminals. In this configuration non-linear transport measurements allow to check which lead contributes to the Kondo density of states (DOS) and which does not. When the ring is connected to two strongly and one weakly coupled leads, the measurement of the differential conductance through the weakly coupled lead allows to probe directly the Kondo DOS. In addition, by applying a bias between the two strongly coupled leads, we show the splitting of the out-of-equilibrium DOS.

cond-mat.mes-hall↗

arXiv2005

Excitons in Electrostatic Traps

We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps.

cond-mat.mes-hall↗

arXiv2005

Topological defects in the edge state structure in a bilayer electron system

We experimentally demonstrate, for the first time, formation of point-like topological defects in the edge state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunnelling rate between layers. Unexpected flattening of the I-V curves in perpendicular magnetic field at a specific filling factor combination and the recovery of the conventional nonlinear I-V characteristics in tilted fields give a strong evidence for the existence of topological defects.

cond-mat.mes-hall↗

arXiv2005

Finite bias charge detection in a quantum dot

We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.

cond-mat.mes-hall↗

arXiv2005

Cotunneling-mediated transport through excited states in the Coulomb blockade regime

We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded regime. In addition, we observe structures related to sequential tunneling through the dot, occuring after it has been excited by an inelastic cotunneling process. We explain our findings using transport calculations within the real-time Green's function approach, including diagrams up to fourth order in the tunneling matrix elements.

cond-mat.mes-hall↗

arXiv2005

Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel

An L-shaped strained n-InGaAs channel is used to polarize and subsequently rotate electron spins solely by means of electric fields. Precession of electrically-excited spins in the absence of applied magnetic fields is directly observed by Kerr rotation microscopy. In addition, in-plane and out-of-plane components of the spin polarization in the channel are simultaneously imaged.

cond-mat.mes-hall↗

arXiv2005

Imaging Electron Interferometer

An imaging interferometer was created in a two-dimensional electron gas by reflecting electron waves emitted from a quantum point contact (QPC) with a circular mirror. Images of electron flow obtained with a scanning probe microscope at liquid He temperatures show interference fringes when the mirror is energized. A quantum phase shifter was created by moving the mirror via its gate voltage, and an interferometric spectrometer can be formed by sweeping the tip over many wavelengths. Experiments and theory demonstrate that the interference signal is robust against thermal averaging.

cond-mat.mes-hall↗

arXiv2005

Antiferromagnetic s-d exchange coupling in GaMnAs

Measurements of coherent electron spin dynamics in Ga(1-x)Mn(x)As/Al(0.4)Ga(0.6)As quantum wells with 0.0006% < x < 0.03% show an antiferromagnetic (negative) exchange bewteen s-like conduction band electrons and electrons localized in the d-shell of the Mn2+ impurities. The magnitude of the s-d exchange parameter, N0 alpha, varies as a function of well width indicative of a large and negative contribution due to kinetic exchange. In the limit of no quantum confinement, N0 alpha extrapolates to -0.09 +/- 0.03 eV indicating that antiferromagnetic s-d exchange is a bulk property of GaMnAs. Measurements of the polarization-resolved photoluminescence show strong discrepancy from a simple model of the exchange enhanced Zeeman splitting, indicative of additional complexity in the exchange split valence band.

cond-mat.mtrl-sci↗

arXiv2005

Electron spin interferometry using a semiconductor ring structure

A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive transport regime. Optical pumping with circularly polarized light on one arm establishes dynamic nuclear polarization which acts as a local effective magnetic field on electron spins due to the hyperfine interaction. This local field causes one spin packet to precess faster than the other, thereby controlling the spin interference when the two packets are combined.

cond-mat.mes-hall↗