arXiv subjects

A. D. Greentree

Publications and source records attributed to A. D. Greentree.

At least 19 recordsLinked to original sources

arXiv2023

Handheld device for non-contact thermometry via optically detected magnetic resonance of proximate diamond sensors

Optically detected magnetic resonance (ODMR) spectroscopy of defect-rich semiconductors is being increasingly exploited for realising a variety of practical quantum sensing devices. A prime example is the on-going development of compact magnetometers based on the nitrogen-vacancy (NV) defect in diamond for the remote sensing of magnetic signals with high accuracy and sensitivity. In these applications, the ODMR-active material is integrated into the overall apparatus to form a self-contained sensor. However, some emerging applications require the sensing material to be in physical contact with an external object of interest, thus requiring an independent readout device. Here we present an ODMR-meter, a compact device specially designed to allow convenient, contactless monitoring of ODMR in a target object, and demonstrate its application to temperature monitoring with NV defects. Our prototype is composed of a handheld readout head (integrating all the necessary optical components and a microwave antenna) and a control box connected to a laptop computer, all made primarily from commercial off-the-shelf components. We test our device using an NV-rich bulk diamond as the object, demonstrate a temperature sensitivity of $10~{\rm mK}/\sqrt{\rm Hz}$ in static conditions, and demonstrate the feasibility of handheld operation. The limitations to measurement speed, sensitivity and accuracy are discussed. The presented device may find immediate use in medical and industrial applications where accurate thermometry is required, and can be extended to magnetic field measurements.

physics.app-ph↗

arXiv2021

Magnetic-Field-Dependent Stimulated Emission from Nitrogen-Vacancy Centres in Diamond

Negatively charged nitrogen-vacancy centres in diamond are promising quantum magnetic field sensors. Laser threshold magnetometry has been a theoretical approach for the improvement of NV-centre ensemble sensitivity via increased signal strength and magnetic field contrast. In this work we experimentally demonstrate laser threshold magnetometry. We use a macroscopic high-finesse laser cavity containing a highly NV-doped and low absorbing diamond gain medium that is pumped at 532nm and resonantly seeded at 710nm. This enables amplification of the signal power by stimulated emission of 64%. We show the magnetic-field dependency of the amplification and thus, demonstrate magnetic-field dependent stimulated emission from an NV-centre ensemble. This emission shows a record contrast of 33% and a maximum output power in the mW regime. These advantages of coherent read-out of NV-centres pave the way for novel cavity and laser applications of quantum defects as well as diamond NV magnetic field sensors with significantly improved sensitivity for the health, research and mining sectors.

quant-ph↗

arXiv2020

Continuous spatial field confocal thermometry using lanthanide doped tellurite glass

Quantifying temperature variations at the micron scale can provide new opportunities in optical sensing. In this paper, we present a novel approach using the temperature-dependent variations in fluorescence of rare-earth doped tellurite glass to provide a micron-scale image of temperature variations over a 200 micrometre field of view. We demonstrate the system by monitoring the evaporation of a water droplet and report a net temperature change of 7.04 K with a sensitivity of at least 0.12 K. These results establish the practicality of this confocal-based approach to provide high-resolution marker-free optical temperature sensing.

physics.app-ph↗

arXiv2017

Magnetic field-induced enhancement of the nitrogen-vacancy fluorescence quantum yield

The nitrogen-vacancy (NV) centre in diamond is a unique optical defect that is used in many applications today and methods to enhance its fluorescence brightness are highly sought after. We observed experimentally an enhancement of the NV quantum yield by up to 7% in bulk diamond caused by an external magnetic field relative to the field-free case. This observation is rationalised phenomenologically in terms of a magnetic field dependence of the NV excited state triplet-to-singlet transition rate. The theoretical model is in good qualitative agreement with the experimental results at low excitation intensities. Our results significantly contribute to our fundamental understanding of the photophysical properties of the NV defect in diamond and may enable novel NV centre-based magnetometry techniques.

cond-mat.mes-hall↗

arXiv2017

Optical Cryocooling of Diamond

The cooling of solids by optical means only using anti-Stokes emission has a long history of research and achievements. Such cooling methods have many advantages ranging from no-moving parts or fluids through to operation in vacuum and may have applications to cryosurgery. However achieving large optical cryocooling powers has been difficult to achieve except in certain rare-earth crystals. Through study of the emission and absorption cross sections we find that diamond, containing either NV or SiV (Nitrogen or Silicon vacancy), defects shows potential for optical cryocooling and in particular, NV doping shows promise for optical refrigeration. We study the optical cooling of doped diamond microcrystals ranging 10-250 microns in diameter trapped either in vacuum or in water. For the vacuum case we find NV-doped microdiamond optical cooling below room temperature could exceed 10 Kelvin, for irradiation powers of P< 100 mW. We predict that such temperature changes should be easily observed via large alterations in the diffusion constant for optically cryocooled microdiamonds trapped in water in an optical tweezer or via spectroscopic signatures such as the ZPL width or Raman line.

quant-ph↗

arXiv2016

Characterization of Three-Dimensional Microstructures in Single Crystal Diamond

We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high quality single crystal diamond are most relevant, residual damage after the fabrication process represents a critical technological issue. The results of Raman and photoluminescence characterization indicate that the partial distortion of the sp3-bonded lattice and the formation of isolated point defects are effectively removed after thermal annealing, leaving low amounts of residual damage in the final structures. Three-dimensional microstructures in single-crystal diamond offer a large range of applications, such as quantum optics devices and fully integrated opto mechanical assemblies.

cond-mat.mtrl-sci↗

arXiv2016

Fabrication of Ultrathin Single-Crystal Diamond Membranes

We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick.

cond-mat.mtrl-sci↗

arXiv2016

An upper limit on the lateral vacancy diffusion length in diamond

Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted region. This could be due to fast diffusion of vacancies from the implanted area during annealing or to a geometric effect related to ion scattering around the mask edges. For quantum and single-atom devices, stray ion damage can be deleterious and must be minimized. In order to profile the distribution of implantation-induced damage, we have used the nitrogen-vacancy colour centre as a sensitive marker for vacancy concentration and distribution following MeV He ion implantation into diamond and annealing. Results show that helium atoms implanted through a mask clamped to the diamond surface are scattered underneath the mask to distances in the range of tens of micrometers from the mask edge. Implantation through a lithographically defined and deposited mask, with no spacing between the mask and the substrate, significantly reduces the scattering to <5 m but does not eliminate it. These scattering distances are much larger than the theoretically estimated vacancy diffusion distance of 260 nm under similar conditions. This paper shows that diffusion, upon annealing, of vacancies created by ion implantation in diamond is limited and the appearance of vacancies many tens of micrometers from the edge of the mask is due to scattering effects.

cond-mat.mtrl-sci↗

arXiv2014

Negative Refraction of Excitations in the Bose-Hubbard Model

Ultracold atoms in optical lattices provide a unique opportunity to study Bose- Hubbard physics. In this work we show that by considering a spatially varying onsite interaction it is possible to manipulate the motion of excitations above the Mott phase in a Bose-Hubbard system. Specifically, we show that it is possible to "engineer" regimes where excitations will negatively refract, facilitating the construction of a flat lens.

cond-mat.quant-gas↗

arXiv2013

Long-range coupling of silicon photonic waveguides using lateral leakage and adiabatic passage

We present a new approach to long range coupling based on a combination of adiabatic passage and lateral leakage in thin shallow ridge waveguides on a silicon photonic platform. The approach enables transport of light between two isolated waveguides through a mode of the silicon slab that acts as an optical bus. Due to the nature of the adiabatic protocol, the bus mode has minimal population and the transport is highly robust. We prove the concept and examine the robustness of this approach using rigorous modelling. We further demonstrate the utility of the approach by coupling power between two waveguides whilst bypassing an intermediate waveguide. This concept could form the basis of a new interconnect technology for silicon integrated photonic chips.

physics.optics↗

arXiv2013

Splitting of photo-luminescent emission from nitrogen-vacancy centers in diamond induced by ion-damage-induced stress

We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV-) photo-luminescent emission in single crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a HPHT diamond, clearly distinguishable spectral components in the NV- emission develop over a range of 4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV- centers for ensemble quantum information protocols.

cond-mat.mtrl-sci↗

arXiv2012

Interferometry using Adiabatic Passage in Dilute Gas Bose-Einstein Condensates

We theoretically examine three-well interferometry in Bose-Einstein condensates using adiabatic passage. Specifically, we demonstrate that a fractional coherent transport adiabatic passage protocol enables stable spatial splitting in the presence of nonlinear interactions. A reversal of this protocol produces a coherent recombination of the BEC with a phase-dependent population of the three wells. The effect of nonlinear interactions on the interferometric measurement is quantified and found to lead to an enhancement in sensitivity for moderate interaction strengths.

cond-mat.quant-gas↗

arXiv2012

Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond

We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transitions. Under resonant excitation, we apply dynamic feedback to stabilize the ZPL frequency. The transition is locked over several minutes and drifts of the peak position on timescales greater than ~100 ms are reduced to a fraction of the single-scan linewidth, with standard deviation as low as 16 MHz (obtained for an NV in bulk, ultra-pure diamond). These techniques should improve the entanglement success probability in quantum communications protocols.

quant-ph↗

arXiv2012

Coherent tunneling via adiabatic passage in a three-well Bose-Hubbard system

We apply the Bose-Hubbard Hamiltonian to a three-well system and show analytically that coherent transport via adiabatic passage (CTAP) of $N$ non-interacting particles across the chain is possible. We investigate the effect of detuning the middle well to recover CTAP when on-site interparticle interactions would otherwise disrupt the transport. The case of small interactions is restated using first-order perturbation theory to develop criteria for adibaticity that define the regime where CTAP is possible. Within this regime we investigate restricting the Hilbert space to the minimum necessary basis needed to demonstrate CTAP, which dramatically increases the number of particles that can be efficiently considered. Finally, we compare the results of the Bose-Hubbard model to a mean-field three-mode Gross-Pitaevskii analysis for the equivalent system.

cond-mat.quant-gas↗

arXiv2011

Depletion of nitrogen-vacancy color centers in diamond via hydrogen passivation

We show a marked reduction in the emission from nitrogen-vacancy (NV) color centers in single crystal diamond due to exposure of the diamond to hydrogen plasmas ranging from 700°C to 1000°C. Significant fluorescence reduction was observed beneath the exposed surface to at least 80mm depth after ~10 minutes, and did not recover after post-annealing in vacuum for seven hours at 1100°C. We attribute the fluorescence reduction to the formation of NVH centers by the plasma induced diffusion of hydrogen. These results have important implications for the formation of nitrogen-vacancy centers for quantum applications, and inform our understanding of the conversion of nitrogen-vacancy to NVH, whilst also providing the first experimental evidence of long range hydrogen diffusion through intrinsic high-purity diamond material.

cond-mat.mtrl-sci↗

arXiv2009

Single atom-scale diamond defect allows large Aharonov-Casher phase

We propose an experiment that would produce and measure a large Aharonov-Casher (A-C) phase in a solid-state system under macroscopic motion. A diamond crystal is mounted on a spinning disk in the presence of a uniform electric field. Internal magnetic states of a single NV defect, replacing interferometer trajectories, are coherently controlled by microwave pulses. The A-C phase shift is manifested as a relative phase, of up to 17 radians, between components of a superposition of magnetic substates, which is two orders of magnitude larger than that measured in any other atom-scale quantum system.

quant-ph↗

arXiv2009

Photophysics of novel diamond based single photon emitters

A detailed study of the photophysical properties of several novel color centers in chemical vapor deposition diamond is presented. These emitters show narrow luminescence lines in the near infra-red. Single photon emission was verified with continuous and pulsed excitation with emission rates at saturation in the MHz regime, whilst direct lifetime measurements reveal excited state lifetimes ranging from 1-14 ns. In addition, a number of quantum emitters demonstrate two level behavior with no bunching present in the second order correlation function. An improved method of evaluating the quantum efficiency through the direct measurement of the collection efficiency from two level emitters is presented and discussed. \

quant-ph↗

arXiv2009

A highly efficient two level diamond based single photon source

An unexplored diamond defect centre which is found to emit stable single photons at a measured rate of 1.6 MHz at room temperature is reported. The novel centre, identified in chemical vapour deposition grown diamond crystals, exhibits a sharp zero phonon line at 734 nm with a full width at half maximum of ~ 4 nm. The photon statistics confirm the center is a single emitter and provides direct evidence of the first true two-level single quantum system in diamond.

quant-ph↗