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A. D. Kent

Publications and source records attributed to A. D. Kent.

53 records · Page 3Linked to original sources
arXiv2005

Ferromagnetic resonance study of polycrystalline Cobalt ultrathin films

We present room temperature ferromagnetic resonance (FMR) studies of polycrystalline ||Pt/10 nm Cu/t Co/10 nm Cu/Pt|| films as a function of Co layer thickness (1 < t < 10 nm) grown by evaporation and magnetron sputtering. FMR was studied with a high frequency broadband coplanar waveguide (up to 25 GHz) using a flip-chip method. The resonance field and the linewidth were measured as a function of the ferromagnetic layer thickness. The evaporated films exhibit a lower magnetization density (Ms = 1131 emu/cm^3) compared to the sputtered films (Ms= 1333 emu/cm^3), with practically equal perpendicular surface anisotropy (Ks ~ -0.5 erg/cm^2). For both series of films, a strong increase of the linewidth was observed for Co layer thickness below 3 nm. For films with a ferromagnetic layer thinner than 4 nm, the damping of the sputtered films is larger than that of the evaporated films. The thickness dependence of the linewidth can be understood in term of the spin pumping effect, from which the interface spin mixing conductance g^{\uparrow\downarrow}S^{-1} is deduced.

cond-mat.mtrl-sci↗
arXiv2005

Symmetry of Magnetic Quantum Tunneling in the Single-Molecule Magnet Mn12-Acetate

The symmetry of magnetic quantum tunneling (MQT) in the single molecule magnet Mn12-acetate has been determined by sensitive low-temperature magnetic measurements in the pure quantum tunneling regime and high frequency EPR spectroscopy in the presence of large transverse magnetic fields. The combined data set definitely establishes the transverse anisotropy terms responsible for the low temperature quantum dynamics. MQT is due to a disorder induced locally varying quadratic transverse anisotropy associated with rhombic distortions in the molecular environment (2nd order in the spin-operators). This is superimposed on a 4th order transverse magnetic anisotropy consistent with the global (average) S4 molecule site symmetry. The hard axes associated with these forms of the transverse anisotropy are not collinear, leading to a complex interplay between local and global symmetries, the consequences of which are analyzed in detail.

cond-mat.mes-hall↗
arXiv2004

Bipolar High Field Excitations in Co/Cu/Co Nanopillars

Current-induced magnetic excitations in Co/Cu/Co bilayer nanopillars ($\sim$50 nm in diameter) have been studied experimentally at low temperatures for large applied fields perpendicular to the layers. At sufficiently high current densities excitations, which lead to a decrease in differential resistance, are observed for both current polarities. Such bipolar excitations are not expected in a single domain model of spin-transfer. We propose that at high current densities strong asymmetries in the longitudinal spin accumulation cause spin-wave instabilities transverse to the current direction in bilayer samples, similar to those we have reported for single magnetic layer junctions.

cond-mat.mes-hall↗
arXiv2004

Current-Induced Effective Magnetic Fields in Co/Cu/Co Nanopillars

We present a method to measure the effective field contribution to spin-transfer-induced interactions between the magnetic layers in a trilayer nanostructure, which enables spin-current effects to be distinguished from the usual charge-current-induced magnetic fields. This technique is demonstrated on submicron Co/Cu/Co nanopillars. The hysteresis loop of one of the magnetic layers in the trilayer is measured as a function of current while the direction of magnetization of the other layer is kept fixed, first in one direction and then in the opposite direction. These measurements show a current-dependent shift of the hysteresis loop which, based on the symmetry of the magnetic response, we associate with spin-transfer. The observed loop-shift with applied current at room temperature is reduced in measurements at 4.2 K. We interprete these results both in terms of a spin-current dependent effective activation barrier for magnetization reversal and a spin-current dependent effective magnetic field. From data at 4.2 K we estimate the magnitude of the spin-transfer induced effective field to be $\sim 1.5 \times 10^{-7} $ Oe cm$^2$/A, about a factor of 5 less than the spin-transfer torque.

cond-mat.mes-hall↗
arXiv2004

Quantum Coherence between High Spin Superposition States of Single Molecule Magnet Ni$_4$

Magnetic quantum tunneling in a single molecule magnet (SMM) has been studied in experiments that combine microwave spectroscopy with high sensitivity magnetic measurements. By monitoring spin-state populations in the presence of microwave magnetic fields, the energy splittings between low lying high spin superposition states of SMM Ni$_4$ ($S$ = 4) have been measured. Absorption linewidths give an upper bound on the rate of decoherence. Pulsed microwave experiments provide a direct measure of the spin-lattice relaxation time, which is found to be remarkably long ($\sim$sec) and to increase with the energy splitting.

cond-mat.mes-hall↗
arXiv2004

Current Induced Excitations in Cu/Co/Cu Single Ferromagnetic Layer Nanopillars

Current-induced magnetic excitations in Cu/Co/Cu single layer nanopillars (~50 nm in diameter) have been studied experimentally as a function of Co layer thickness at low temperatures for large applied fields perpendicular to the layers. For asymmetric junctions current induced excitations are observed at high current densities for only one polarity of the current and are absent at the same current densities in symmetric junctions. These observations confirm recent predictions of spin-transfer torque induced spin wave excitations in single layer junctions with a strong asymmetry in the spin accumulation in the leads.

cond-mat.mes-hall↗
arXiv2003

Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars

Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (~100nm in diameter) has been studied experimentally for large applied fields perpendicular to the layers. An abrupt and hysteretic increase in dynamic resistance is observed at high current densities for one polarity of the current, comparable to the giant magnetoresistance effect observed at low fields. A micromagnetic model, that includes a spin-transfer torque, suggests that the current induces a complete reversal of the thin Co layer to alignment antiparallel to the applied field-that is, to a state of maximum magnetic energy.

cond-mat.mes-hall↗
arXiv2003

Observation of a Distribution of Internal Transverse Magnetic Fields in a Mn12-Based Single Molecule Magnet

A distribution of internal transverse magnetic fields has been observed in single molecule magnet (SMM) Mn12-BrAc in the pure magnetic quantum tunneling (MQT) regime. Magnetic relaxation experiments at 0.4 K are used to produce a hole in the distribution of transverse fields whose angle and depth depend on the orientation and amplitude of an applied transverse ``digging field.'' The presence of such transverse magnetic fields can explain the main features of resonant MQT in this material, including the tunneling rates, the form of the relaxation and the absence of tunneling selection rules. We propose a model in which the transverse fields originate from a distribution of tilts of the molecular magnetic easy axes.

cond-mat.mes-hall↗
arXiv2003

Symmetry of Magnetic Quantum Tunneling in Single Molecule Magnet Mn12-acetate

The symmetry of magnetic quantum tunneling has been studied in the prototype single molecule magnet Mn$_{12}$-acetate using a micro-Hall effect magnetometer and superconducting high field vector magnet system. An average crystal fourfold symmetry is shown to be due to local molecular environments of twofold symmetry that are rotated by 90$^o$ with respect to one another, confirming that disorder which lowers the molecule symmetry is at important to magnetic quantum tunneling. We have studied a subset of these lower (twofold) site symmetry molecules and present evidence for a Berry phase effect consistent with a local twofold symmetry.

cond-mat.mes-hall↗
arXiv2002

New geometries for high spatial resolution hall probes

The Hall response function of symmetric and asymmetric planar Hall effect devices is investigated by scanning a magnetized tip above a sensor surface while simultaneously recording the topography and the Hall voltage. Hall sensor geometries are tailored using a Focused Ion Beam, in standard symmetric and new asymmetric geometries. With this technique we are able to reduce a single voltage probe to a narrow constriction 20 times smaller than the other device dimensions. We show that the response function is peaked above the constriction, in agreement with numerical simulations. The results suggest a new way to pattern Hall sensors for enhanced spatial resolution.

cond-mat.mes-hall↗
arXiv2002

Tunneling Splittings in Mn12-Acetate Single Crystals

A Landau-Zener multi-crossing method has been used to investigate the tunnel splittings in high quality Mn$_{12}$-acetate single crystals in the pure quantum relaxation regime and for fields applied parallel to the magnetic easy axis. With this method several individual tunneling resonances have been studied over a broad range of time scales. The relaxation is found to be non-exponential and a distribution of tunnel splittings is inferred from the data. The distributions suggest that the inhomogeneity in the tunneling rates is due to disorder that produces a non-zero mean value of the average transverse anisotropy, such as in a solvent disorder model. Further, the effect of intermolecular dipolar interaction on the magnetic relaxation has been studied.

cond-mat.mes-hall↗
arXiv1999

Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films

Large negative magnetoresistance (MR) observed in transport measurements of hcp Co films with stripe domains were recently reported and interpreted in terms of a novel domain wall (DW) scattering mechanism. Here detailed MR measurements, magnetic force microscopy, and micromagnetic calculations are combined to elucidate the origin of MR in this material. The large negative room temperature MR reported previously is shown to be due to ferromagnetic resistivity anisotropy. Measurements of the resistivity for currents parallel (CIW) and perpendicular to DWs (CPW) have been conducted as a function of temperature. Low temperature results show that any intrinsic effect of DWs scattering on MR of this material is very small compared to the anisotropic MR.

cond-mat.mes-hall↗
arXiv1998

Magnetoresistance of Epitaxial Fe Wires with Varied Domain Wall Structure

The low temperature negative domain wall (DW) contribution to the resistivity observed in expitaxial Fe microstructures has been investigated as a function of film thickness. The DW spin structure changes from Bloch to Neel-like with decreasing film thickness. Results suggest that an interplay between orbital effects in the internal magnetic fields near DWs and thin film surface scattering are at the origin of the observed negative wall contribution.

cond-mat.mes-hall↗
arXiv1998

Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires

The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $μm$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.

cond-mat.mes-hall↗
arXiv1998

Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains

The magnetoresistance (MR) associated with domain boundaries has been investigated in microfabricated bcc Fe (0.65 to 20 $μ$m linewidth) wires with controlled stripe domains. Domain configurations have been characterized using magnetic force microscopy. MR measurements as a function of field angle, temperature and domain configuration are used to estimate MR contributions due to resistivity anisotropy and domain walls. Evidence is presented that domain boundaries enhance the conductivity in such microstructures over a broad range of temperatures (1.5 K to 80 K).

cond-mat.mes-hall↗
arXiv1997

Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.

cond-mat.str-el↗