arXiv subjects

A. F. Morpurgo

Publications and source records attributed to A. F. Morpurgo.

52 records · Page 3Linked to original sources

arXiv2005

Sample-specific and Ensemble-averaged Magnetoconductance of Individual Single-Wall Carbon Nanotubes

We discuss magnetotransport measurements on individual single-wall carbon nanotubes with low contact resistance, performed as a function of temperature and gate voltage. We find that the application of a magnetic field perpendicular to the tube axis results in a large magnetoconductance of the order of e^2/h at low temperature. We demonstrate that this magnetoconductance consists of a sample-specific and of an ensemble-averaged contribution, both of which decrease with increasing temperature. The observed behavior resembles very closely the behavior of more conventional multi-channel mesoscopic wires, exhibiting universal conductance fluctuations and weak localization. A theoretical analysis of our experiments will enable to reach a deeper understanding of phase-coherent one-dimensional electronic motion in SWNTs.

cond-mat.mes-hall↗

arXiv2005

Experimental observation of bias-dependent non-local Andreev reflection

We investigate transport through hybrid structures consisting of two normal metal leads connected via tunnel barriers to one common superconducting electrode. We find clear evidence for the occurrence of non-local Andreev reflection and elastic cotunneling through superconductor when the separation of the tunnel barrier is comparable to the superconducting coherence length. The probability of the two processes is energy dependent, with elastic cotunneling dominating at low energy and non-local Andreev reflection at higher energies. The energy scale of the crossover is found to be the Thouless energy of the superconductor, which indicates the phase coherence of the processes. Our results are relevant for the realization of recently proposed entangler devices.

cond-mat.supr-con↗

arXiv2005

Transport through a superconductor-interacting normal metal junction: a phenomenological description

We propose a phenomenological description of electronic transport through a normal metal/superconductor interface of arbitrary transparency, which accounts for the presence of electron-electron interaction in the normal metal. The effect of interactions is included through an energy-dependent transmission probability that is inserted in the expression for the current-voltage characteristics of a non-interacting system. This results in a crossover from the Andreev to the tunneling limit as a function of the energy at which transport is probed. The proposed description reproduces qualitatively the results obtained with formally correct theories as well as experimental observations. In view of its simplicity, we expect our approach to be of use for the interpretation of future experiments.

cond-mat.supr-con↗

arXiv2005

Space Charge Limited Current Revisited: the Effect of Surface Traps

We analyze the effect of surface traps on unipolar space charge limited current and find that they have a profound influence on the $I-V$ curves. By performing calculations that account for the presence of these traps, we can reproduce experimental observations not captured by the conventional theory that only considers the presence of traps in the bulk of the material. Through the use of realistic material parameters, we show that the effects discussed have clear experimental relevance.

cond-mat.other↗

arXiv2005

Universal spin-induced Time Reversal Symmetry breaking in two-dimensional electron gases with Rashba spin-orbit interaction

We have experimentally studied the spin-induced time reversal symmetry (TRS) breaking as a function of the relative strength of the Zeeman energy (E_Z) and the Rashba spin-orbit interaction energy (E_SOI), in InGaAs-based 2D electron gases. We find that the TRS breaking saturates when E_Z becomes comparable to E_SOI. Moreover, we show that the spin-induced TRS breaking mechanism is a universal function of the ratio E_Z/E_SOI, within the experimental accuracy.

cond-mat.mes-hall↗

arXiv2005

Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3 cm$^2$/Vs in both materials. The highest mobility for electrons is observed for Iron-Phthalocyanines and is approximately one order of magnitude lower. Our measurements indicate that these values are limited by extrinsic contact effects due to the transistor fabrication and suggest that considerably higher values for the electron and hole mobility can be achieved in these materials.

cond-mat.other↗

arXiv2004

Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain

We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As.

cond-mat.str-el↗

arXiv2004

Nanometer-spaced platinum electrodes with calibrated separation

We have fabricated pairs of platinum electrodes with separation between 20 and 3.5 nm. Our technique combines electron beam lithography and chemical electrodeposition. We show that the measurement of the conductance between the two electrodes through the electrolyte provides an accurate and reproducible way to control their separation. We have tested the robustness of the electrodes by applying large voltages across them and by using them to measure the transport properties of Au nano-clusters. Our results show that the technique reliably produces metallic electrodes with a separation that bridges the minimum scale accessible by electron beam lithography with the atomic scale.

cond-mat.mtrl-sci↗

arXiv2004

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than $10^{-9} \ \mathrm{A/cm}^2$. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.

cond-mat.other↗

arXiv2004

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits to observe that the mobility of the charge carriers systematically decreases with increasing the dielectric constant of the gate insulator, the decrease being proportional to (epsilon)-1. This finding demonstrates that the mobility of carriers in organic single-crystal field-effect transistors is an intrinsic property of the crystal/dielectric interface and that it does not only depend on the specific molecule used.

cond-mat.mtrl-sci↗

arXiv2004

Competition between Spin-Orbit Interaction and Zeeman Coupling in Rashba 2DEGs

We investigate systematically how the interplay between Rashba spin-orbit interaction and Zeeman coupling affects the electron transport and the spin dynamics in InGaAs-based 2D electron gases. From the quantitative analysis of the magnetoconductance, measured in the presence of an in-plane magnetic field, we conclude that this interplay results in a spin-induced breaking of time reversal symmetry and in an enhancement of the spin relaxation time. Both effects, due to a partial alignment of the electron spin along the applied magnetic field, are found to be in excellent agreement with recent theoretical predictions.

cond-mat.mes-hall↗

arXiv2004

Organic Single-Crystal Field-Effect Transistors

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $μ$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.

cond-mat.other↗

arXiv2003

Statistical significance of fine structure in the frequency spectrum of Aharonov-Bohm conductance oscillations

We discuss a statistical analysis of Aharonov-Bohm conductance oscillations measured in a two-dimensional ring, in the presence of Rashba spin-orbit interaction. Measurements performed at different values of gate voltage are used to calculate the ensemble-averaged modulus of the Fourier spectrum and, at each frequency, the standard deviation associated to the average. This allows us to prove the statistical significance of a splitting that we observe in the h/e peak of the averaged spectrum. Our work illustrates in detail the role of sample specific effects on the frequency spectrum of Aharonov-Bohm conductance oscillations and it demonstrates how fine structures of a different physical origin can be discriminated from sample specific features.

cond-mat.mes-hall↗

arXiv2003

Space Charge Limited Transport and Time of Flight Measurements in Tetracene Single Crystals: a Comparative Study

We report on a systematic study of electronic transport in tetracene single crystals by means of space charge limited current spectroscopy and time of flight measurements. Both $I$-$V$ and time of flight measurements show that the room-temperature effective hole-mobility reaches values close to $μ\simeq 1$ cm$^2$/Vs and show that, within a range of temperatures, the mobility increases with decreasing temperature. The experimental results further allow the characterization of different aspects of the tetracene crystals. In particular, the effects of both deep and shallow traps are clearly visible and can be used to estimate their densities and characteristic energies. The results presented in this paper show that the combination of $I$-$V$ measurements and time of flight spectroscopy is very effective in characterizing several different aspects of electronic transport through organic crystals.

cond-mat.mtrl-sci↗

arXiv2003

Field-Effect Transistors on Tetracene Single Crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.

cond-mat.mtrl-sci↗

arXiv1999

Controlled Fabrication of Metallic Electrodes with Atomic Separation

We report a new technique for fabricating metallic electrodes on insulating substrates with separations on the 1 nm scale. The fabrication technique, which combines lithographic and electrochemical methods, provides atomic resolution without requiring sophisticated instrumentation. The process is simple, controllable, reversible, and robust, allowing rapid fabrication of electrode pairs with high yield. We expect the method to prove useful in interfacing molecular-scale structures to macroscopic probes and electronic devices .

cond-mat.mtrl-sci↗