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A. Fazzio

Publications and source records attributed to A. Fazzio.

At least 19 recordsLinked to original sources

Heterogeneous Molecular Signatures of Human Odor Perception

Understanding how molecular structure gives rise to odor perception remains a long-standing challenge, with ongoing debate over whether olfaction is primarily governed by molecular shape, vibrational properties, or their interplay at the level of olfactory receptors. Here, we ask whether different odors rely on common molecular determinants or instead emerge from distinct physicochemical regimes. Using interpretable machine-learning models trained on molecular descriptors derived from first-principles calculations that span electronic, vibrational, and structural properties, we analyze feature contributions for odor categories and their associated receptors. We find that no single descriptor class universally dominates odor prediction; instead, different odors exhibit strongly odor-specific patterns of feature importance, with substantial variability across physicochemical domains. This heterogeneity is consistent across different models, suggesting that a universal encoding scheme does not capture odor perception but reflects receptor- and odor-dependent structure-odor relationships. Our results provide statistical constraints on competing olfactory theories and offer a data-driven framework for organizing odor space.

cond-mat.mtrl-sci

Exploring Topological Transport in Pt$_2$HgSe$_3$ Nanoribbons: Insights for Spintronic Device Integration

The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, Pt$_2$HgSe$_3$ nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about $0.9$\,{nm}, which is much smaller than those predicted in other 2D topological systems. Thus, suggesting that Pt$_2$HgSe$_3$ allows the exploitation of topological transport properties in narrow ribbons. Using non-equilibrium Green's functions calculations, we have examined the electron conductivity upon the presence of Se\,$\leftrightarrow$\,Hg antistructure defects randomly distributed in the Pt$_2$HgSe$_3$ scattering region. By considering scattering lengths up to $109$\,nm, we found localization lengths that can surpass $\mu$m sizes for narrow nanoribbons ($<9$\,nm). These findings can contribute to further understanding the behavior of topological insulators under realistic conditions and their integration within electronic, spintronic devices.

cond-mat.mes-hall

Resonant helical multi-edge transport in Sierpi\'nski carpets

In recent years, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossover with topological phases of matter. We present here a theoretical investigation of the helical edge transport in Sierpinski carpets (SCs), combining the Bernevig-Hughes-Zhang (BHZ) model and the Landauer approach. Starting from a pristine two-dimensional topological insulator (2DTI), according to the BHZ model, our results reveal resonant transport modes when the SC fractal generation reaches the same scale as the space discretization; these modes are analyzed within a contour plot mapping of the local spin-polarized currents, shown spanned and assisted by inner-edge channels. From such a deeply fractalized SC building block, we introduce a rich tapestry formed by superior SC hierarchies, enlightening intricate patterns and unique fingerprints that offer valuable insights into how helical edge transport occurs in these fractal dimensions.

cond-mat.mtrl-sci

Design of spin-orbital-textures in ferromagnetic/topological insulator interfaces

Spin-orbital textures in topological insulators due to the spin locking with the electron momentum, play an important role in spintronic phenomena that arise from the interplay between charge and spin degrees of freedom. We have explored interfaces between a ferromagnetic system (CrI$_3$) and a topological insulator (Bi$_2$Se$_3$) that allow the manipulation of spin-orbital textures. Within an {\it ab initio} approach we have extracted the spin-orbital-textures dependence of experimentally achievable interface designs. The presence of the ferromagnetic system introduces anisotropic transport of the electronic spin and charge. From a parameterized Hamiltonian model we capture the anisotropic backscattering behavior, showing its extension to other ferromagnetic/topological insulator interfaces. We verified that the van der Waals TI/MI interface is an excellent platform for controlling the spin degree of freedom arising from topological states, providing a rich family of unconventional spin texture configurations.

cond-mat.mes-hall

Substrate suppression of oxidation process in pnictogen monolayers

2D materials present an interesting platform for device designs. However, oxidation can drastically change the system's properties, which need to be accounted for. Through {\it ab initio} calculations, we investigated freestanding and SiC-supported As, Sb, and Bi mono-elemental layers. The oxidation process occurs through an O$_2$ spin-state transition, accounted for within the Landau-Zener transition. Additionally, we have investigated the oxidation barriers and the role of spin-orbit coupling. Our calculations pointed out that the presence of SiC substrate reduces the oxidation time scale compared to a freestanding monolayer. We have extracted the energy barrier transition, compatible with our spin-transition analysis. Besides, spin-orbit coupling is relevant to the oxidation mechanisms and alters time scales. The energy barriers decrease as the pnictogen changes from As to Sb to Bi for the freestanding systems, while for SiC-supported, they increase across the pnictogen family. Our computed energy barriers confirm the enhanced robustness against oxidation for the SiC-supported systems.

cond-mat.mtrl-sci

Uncovering the Structural Evolution Arsenene on SiC Substrate

Two-dimensional arsenic allotropes have been grown on metallic surfaces, while topological properties have been theoretically described on strained structures. Here we experimentally grow arsenene by molecular beam epitaxy over the insulating SiC substrate. The arsenene presents a flat structure with a strain field that follows the SiC surface periodicity. Our ab initio simulations, based on the density functional theory, corroborate the experimental observation. The strained structure presents a new arsenene allotrope with a triangular structure, rather than the honeycomb previously predicted for other pnictogens. This strained structure presents a Peierls-like transition leading to an indirect gap semiconducting behavior.

cond-mat.mtrl-sci

Topological insulating phase arising in transition metal dichalcogenide alloy

Transition metal dichalcogenides have been the subject of numerous studies addressing technological applications and fundamental issues. Single-layer PtSe2 is a semiconductor with a trivial bandgap, in contrast, its counterpart with 25% of Se atoms substituted by Hg, Pt2HgSe3 (jacutingaite, a naturally occurring mineral), is a 2D topological insulator with a large bandgap. Based on ab-initio calculations, we investigate the energetic stability, and the topological transition in Pt(HgxSe1-x)2 as a function of alloy concentration, and the distribution of Hg atoms embedded in the PtSe2 host. Our findings reveal the dependence of the topological phase with respect to the alloy concentration and robustness with respect distribution of Hg. Through a combination of our ab-initio results and a defect wave function percolation model, we estimate the random alloy concentration threshold for the topological transition to be only 9%. Our results expand the possible search for non-trivial topological phases in random alloy systems.

cond-mat.mtrl-sci

Bandgap evolution in nanographene assemblies

Recently cycloarene has been experimentally obtained in a self-assembled structure, forming graphene-like monoatomic layered systems. Here, we establish the bandgap engineering/prediction in cycloarene assemblies within a combination of density functional theory and tight-binding Hamiltonians. Our results show a weak dependence of the gap with the assembly geometry, contrasting a strong dependence with the inter-molecule bond density. We derived a effective model that allows the interpretation of the arising energy gap for general particle-hole symmetric molecular arranges based on inter-molecular bond strength.

cond-mat.mtrl-sci

Emergent quasiparticles in Euclidean tilings

Material's geometrical structure is a fundamental part of their properties. The honeycomb geometry of graphene is responsible for the arising of its Dirac cone, while the kagome and Lieb lattice hosts flat bands and pseudospin-1 Dirac dispersion. These features seem to be particular for few 2D systems rather than a common occurrence. Given this correlation between structure and properties, exploring new geometries can lead to unexplored states and phenomena. Kepler is the pioneer of the mathematical tiling theory, describing ways of filing the euclidean plane with geometrical forms in its book {\it Harmonices Mundi}. In this letter, we characterize $1255$ lattices composed of the euclidean plane's k-uniform tiling, with its intrinsic properties unveiled - this class of arranged tiles present high-degeneracy points, exotic quasiparticles, and flat bands as a common feature. Here, we present aid for experimental interpretation and prediction of new 2D systems.

cond-mat.mtrl-sci

Jacutingaite-family: a class of topological materials

Jacutingate, a recently discovered Brazilian naturally occurring mineral, has shown to be the first experimental realization of the Kane-Mele topological model. In this letter we have unveiled a class of materials $M_2NX_3$ ($M$=Ni, Pt, Pd; $N$=Zn, Cd, Hg; and $X$=S, Se, Te), sharing jacutingaite's key features, i.e., high stability, and topological phase. By employing first-principles calculations we extensively characterize the energetic stability of this class while showing a common occurrence of the Kane-Mele topological phase. Here we found Pt-based materials surpassing jacutingaite's impressive topological gap and lower exfoliation barrier while retaining its stability.

cond-mat.mtrl-sci

Long range dynamical coupling between magnetic adatoms mediated by a 2D topological insulator

We study the spin excitation spectra and the dynamical exchange coupling between iron adatoms on a Bi bilayer nanoribbon. We show that the topological character of the edge states is preserved in the presence of the magnetic adatoms. Nevertheless, they couple significantly to the edge spin currents, as witnessed by the large and long-ranged dynamical coupling we obtain in our calcula- tions. The large effective magnetocrystalline anisotropy of the magnetic adatoms combined with the transport properties of the topologically protected edge states make this system a strong candidate for implementation of spintronics devices and quantum information and/or computation protocols.

cond-mat.str-el

Unconventional spin texture in a non-centrosymmetric quantum spin Hall insulator

We proposed that the simultaneous presence of both Rashba and band inversion can lead to a Rashba-like spin-splitting formed by two bands with the same in-plane helical spin texture. Because of this unconventional spin texture, the backscattering is forbidden in edge and bulk conductivity channels. We propose a new non-centrosymmetric honeycomb-lattice quantum spin Hall (QSH) insulator family formed by the IV, V, and VII elements with this property. The system formed by Bi, Pb and I atoms is mechanically stable and has both a large Rashba spin-splitting of 60 meV and a large nontrivial band gap of 0.14 eV. Since the edge and the bulk states are protected by the TR symmetry, contrary to what happens in most doped QSH insulators, the bulk states do not contribute to the backscattering in the electronic transport, allowing the construction of a spintronic device with less energy loss.

cond-mat.mtrl-sci

On the Emergence of Topologically Protected Boundary States in Topological/Normal Insulator Heterostructures

We have performed a systematic investigation of the formation of topologically protected boundary states (TPBS) in topological/normal insulators (TI/NI) heterostructures. Using a recently developed scheme to construct {\it ab-initio} tight-binding Hamiltonian matrices from density functional theory (DFT) calculations, we studied systems of realistic size with high accuracy and control over the relevant parameters such as TI and NI band alignment, NI gap and spin-orbit coupling strength. Our findings point to the existence of an NI critical thickness for the emergence of TPBS and to the importance of the band alignment between the TI and NI for the appearance of the TPBS. We chose Bi$_{2}$Se$_{3}$ as a prototypical case where the topological/normal insulator behavior is modeled by regions with/without spin-orbit coupling. Finally, we validate our approach comparing our model with fully relativistic DFT calculations for TI/NI heterostructures of Bi$_{2}$Se$_{3}$/Sb$_{2}$Se$_{3}$.

cond-mat.mtrl-sci

A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone

We put forward a tight-binding model for rhombohedral topological insulators materials with the space group $D^{5}_{3d}(R\bar{3}m)$. The model describes the bulk band structure of these materials over the whole Brillouin zone. Within this framework, we also describe the topological nature of surface states, characterized by a Dirac cone-like dispersion and the emergence of surface projected bulk states near to the Dirac-point in energy. We find that the breaking of the $R_{3}$ symmetry as one moves away from the $Γ$ point has an important role in the hybridization of the $p_x$, $p_y$, and $p_z$ atomic orbitals. In our tight-binding model, the latter leads to a band mixing matrix element ruled by a single parameter. We show that our model gives a good description of the strategies/mechanisms proposed in the literature to eliminate and/or energy shift the bulk states away from the Dirac point, such as stacking faults and the introduction of an external applied electric field.

cond-mat.mes-hall

Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus

Phosphorene is a novel two-dimensional material that can be isolated through mechanical exfoliation from layered black phosphorus, but unlike graphene and silicene, monolayer phosphorene has a large band gap. It was thus unsuspected to exhibit band inversion and the ensuing topological insulator behavior. It has recently attracted interest because of its proposed application as field effect transistors. Using first-principles calculations with applied perpendicular electric field F we predict a continuous transition from the normal insulator to a topological insulator and eventually to a metal as a function of F. The continuous tuning of topological behavior with electric field would lead to spin-separated, gapless edge states, i.e., quantum spins Hall effect. This finding opens the possibility of converting normal insulating materials into topological ones via electric field, and making a multi-functional field effect topological transistor that could manipulate simultaneously both spins and charge carrier.

cond-mat.mtrl-sci

Splitting of the topologically-protected Dirac cone without breaking time reversal symmetry

Topological insulators (TIs) are a new class of matter characterized by the unique electronic properties of an insulating bulk and metallic boundaries arising from non-trivial bulk band topology. While the surfaces of TIs have been well studied, the interface between TIs and semiconductors may not only be more technologically relevant but the interaction with non-topological states may fundamentally alter the physics. Here, we present a general model to show that such an interaction can lead to spin-momentum locked non-topological states, the Dirac cone can split in two, and the particle-hole symmetry can be fundamentally broken, along with their possible ramifications. Unlike magnetic doping or alloying, these phenomena occur without topological transitions or the breaking of time reversal symmetry. The model results are corroborated by first-principles calculations of the technologically relevant Bi$_2$Se$_3$ film van der Waals bound to a Se-treated GaAs substrate.

cond-mat.mtrl-sci

Quantum spin Hall effect on germanene nanoroad embedded in a completely hydrogenated germanene

We show that germanene nanoroads embedded in a completely hydrogenated germanene (germanane) exhibits a quantum spin Hall effect (QSHE). These nanoroads can be obtained experimentally by local hydrogen dissociation from germanane. Using first principle calculations we predict that germanene nanoroads with zigzag interfaces show dissipationless conducting channels with in-plane and out-of-plane spin textures.

cond-mat.mes-hall

Topological Phases in Triangular Lattices of Ru Adsorbed on Graphene: ab-initio calculations

We have performed an ab initio investigation of the electronic properties of the graphene sheet adsorbed by Ru adatoms (Ru/graphene). For a particular set of triangular arrays of Ru adatoms, we find the formation of four (spin-polarized) Dirac cones attributed to a suitable overlap between two hexagonal lattices: one composed by the C sites of the graphene sheet, and the other formed by the surface potential induced by the Ru adatoms. Upon the presence of spin-orbit coupling (SOC) nontrivial band gaps take place at the Dirac cones promoting several topological phases. Depending on the Ru concentration, the system can be topologically characterized among the phases i) Quantum Spin Hall (QSH), ii) Quantum Anomalous Hall (QAH), iii) metal iv) or trivial insulator. For each concentration, the topological phase is characterized by the ab-initio calculation of the Chern number.

cond-mat.mes-hall