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A. Fazzio

Publications and source records attributed to A. Fazzio.

At least 37 records · Page 2Linked to original sources
arXiv2013

Interfaces between buckling phases in Silicene: Ab initio density functional theory calculations

The buckled structure of silicene leads to the possibility of new kinds of line defects that separate regions with reversed buckled phases. In the present work we show that these new grain boundaries have very low formation energies, one order of magnitude smaller than grain boundaries in graphene. These defects are stable along different orientations, and they can all be differentiated by STM images. All these defects present local dimerization between the Si atoms, with the formation of $π$-bonds. As a result, these defects are preferential adsorption sites when compared to the pristine region. Thus, the combination of low formation energy and higher reactivity of these defects may be cleverly used to design new nano-structures embedded in silicene.

cond-mat.mtrl-sci↗
arXiv2013

Spin Caloritronics in graphene with Mn

We show that graphene with Mn adatoms trapped at single vacancies feature spin-dependent Seebeck effect, thus enabling the use of this material for spin caloritronics. A gate potential can be used to tune its thermoelectric properties in a way it presents either a total spin polarized current, flowing in one given direction, or currents for both spins flowing in opposite directions without net charge transport. Moreover, we show that the thermal magnetoresistance can be tuned between $-100\%$ and $+100\%$ by varying agate potential.

cond-mat.mes-hall↗
arXiv2011

Adatoms in graphene as a source of current polarization: Role of the local magnetic moment

We theoretically investigate spin-resolved currents flowing in large-area graphene, with and without defects, doped with single atoms of noble metals (Cu, Ag and Au) and 3d-transition metals (Mn,Fe,Co and Ni). We show that the presence of a local magnetic moment is a necessary but not sufficient condition to have a non zero current polarization. An essential requirement is the presence of spin-split localized levels near the Fermi energy that strongly hybridize with the graphene pi-bands. We also show that a gate potential can be used to tune the energy of these localized levels, leading to an external way to control the degree of spin-polarized current without the application of a magnetic field.

cond-mat.mtrl-sci↗
arXiv2011

Bilayer graphene dual-gate nanodevice: An ab initio simulation

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping.

cond-mat.mes-hall↗
arXiv2011

Spin-filtering and Disorder Induced Giant Magnetoresistance in Carbon Nanotubes: Ab Initio Calculations

Nitrogen-doped carbon nanotubes can provide reactive sites on the porphyrin-like defects. It's well known that many porphyrins have transition metal atoms, and we have explored transition metal atoms bonded to those porphyrin-like defects in N-doped carbon nanotubes. The electronic structure and transport are analyzed by means of a combination of density functional theory and recursive Green's functions methods. The results determined the Heme B-like defect (an iron atom bonded to four nitrogens) as the most stable and with a higher polarization current for a single defect. With randomly positioned Heme B-defects in a few hundred nanometers long nanotubes the polarization reaches near 100% meaning an effective spin filter. A disorder induced magnetoresistance effect is also observed in those long nanotubes, values as high as 20000% are calculated with non-magnectic eletrodes.

cond-mat.mtrl-sci↗
arXiv2011

Spin-texture and magnetic anisotropy of Co adsorbed Bi$_2$Se$_3$ topological insulator surfaces

Based upon first-principles methods, we investigate the magnetic anisotropy and the spin-texture of Co adatoms embedded in the topmost Se network of the topological insulator Bi$_2$Se$_3$ surface. We find the formation of energetically stable magnetic moment perpendicular to the surface plane, S$_z$. Our results for the pristine Bi$_2$Se$_3$ surface indicate the presence of helical spin-texture not only in the massless surface Dirac states, but also surface states resonant within the valence band present spin-texture. On the other hand, upon the presence of Co adatoms we find that the out-of-plane surface magnetism represents the dominant spin state (S$_z$), while the planar spin components, S$_x$ and S$_y$, are almost suppressed.

cond-mat.mes-hall↗
arXiv2011

Doping of graphene adsorbed on the a-SiO$_2$ surface

We have performed an {\it ab initio} theoretical investigation of graphene sheet adsorbed on amorphous SiO$_2$ surface (G/a-SiO$_2$). We find that graphene adsorbs on the a-SiO$_2$ surface through van der Waals interactions. The inhomogeneous topology of the a-SiO$_2$ clean surface promotes a total charge density displacement on the adsorbed graphene sheet, giving rise to electron-rich as well as hole-rich regions on the graphene. Such anisotropic distribution of the charge density may contribute to the reduction of the electronic mobility in G/a-SiO$_2$ systems. Furthermore, the adsorbed graphene sheet exhibits a net total charge density gain. In this case, the graphene sheet becomes n-type doped, however, with no formation of chemical bonds at the graphene--SiO$_2$ interface. The electronic charge transfer from a-SiO$_2$ to the graphene sheet occurs upon the formation of a partially occupied level lying above the Dirac point. We find that such partially occupied level comes from the three-fold coordinated oxygen atoms in the a-SiO$_2$ substrate.

cond-mat.mtrl-sci↗
arXiv2010

Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of $[000\bar{1}]$ $SiC$ mimics i)the energy bands around the Fermi level and ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a $SiC$ surface loses the graphene-like properties, which are restored solely over the trenches, providing in this way a confined strip region.

cond-mat.mtrl-sci↗
arXiv2009

Formation of Atomic Carbon Chains from Graphene Nanoribbons

The formation of one-dimensional carbon chains from graphene nanoribbons is investigated using it ab initio molecular dynamics. We show under what conditions it is possible to obtain a linear atomic chain via pulling of the graphene nanoribbons. The presence of dimers composed of two-coordinated carbon atoms at the edge of the ribbons is necessary for the formation of the linear chains, otherwise there is simply the full rupture of the structure. The presence of Stone-Wales defects close to these dimers may lead to the formation of longer chains. The local atomic configuration of the suspended atoms indicates the formation of single and triple bonds, which is a characteristic of polyynes.

cond-mat.mtrl-sci↗
arXiv2009

Disorder-based graphene spintronics

The use of the spin of the electron as the ultimate logic bit - in what has been dubbed spintronics - can lead to a novel way of thinking about information flow. At the same time single layer graphene has been the subject of intense research due to both its fundamental properties as well as its potential application in nanoscale electronics. While defects can significantly alter the electronic properties of nanoscopic systems, the lack of control can lead to seemingly deleterious effects arising from the random arrangement of such impurities. Here we demonstrate, using {\it ab initio} density functional theory and non-equilibrium Green's functions calculations, that it is possible to obtain perfect spin selectivity in doped graphene nanoribbons to produce a perfect spin filter. We show that initially unpolarized electrons entering the system give rise to 100% polarization of the current due to random disorder. This effect is explained in terms of different localization lengths for each spin channel which together with the well know exponential dependence of the conductance on the length of the device leads to a new mechanism for the spin filtering effect that is enhanced by disorder.

cond-mat.mes-hall↗
arXiv2009

Surface magnetization in non-doped ZnO nanostructures

We have investigated the magnetic properties of non-doped ZnO nanostructures by using {\it ab initio} total energy calculations. Contrary to many proposals that ferromagnetism in non-doped semiconductors should be induced by intrinsic point defects, we show that ferromagnetism in nanostructured materials should be mediated by extended defects such as surfaces and grain boundaries. This kind of defects create delocalized, spin polarized states that should be able to warrant long-range magnetic interactions.

cond-mat.mtrl-sci↗
arXiv2008

Barrierless procedure for substitutionally doping graphene sheets with boron atoms: ab initio calculations

Using ab initio methods, we propose a simple and effective way to substitutionally dope graphene sheets with Boron. The method consists of selectively exposing each side of the graphene sheet to different elements. We first expose one side of the membrane to Boron, while the other side is exposed to Nitrogen. Proceeding this way, the B atoms will be spontaneously incorporated into the graphene membrane, without any activation barrier. In a second step, the system should be exposed to a H-rich environment, that will remove the CN radical from the layer and form HCN, leading to a perfect substitutional doping.

cond-mat.mtrl-sci↗
arXiv2008

Edge effects in Bilayer Graphene Nanoribbons

We show that the ground state of zigzag bilayer graphene nanoribbons is non-magnetic. It also possesses a finite gap, which has a non-monotonic dependence with the width as a consequence of the competition between bulk and strongly attractive edge interactions. All results were obtained using {ab initio} total energy density functional theory calculations with the inclusion of parametrized van der Waals interactions.

cond-mat.mtrl-sci↗
arXiv2006

EL2--like defects in InP nanowires

We have performed an {\it ab initio} total energy investigation, within the density functional theory (DFT), of antisite defects in InP nanowires (InP$NW$s) grown along the [111] direction. Our total energy results indicate that, (i) P antisites (P$_{\rm In}$) are the most likely antisite defect compared with In antisites (In$_{\rm P}$), and (ii) the formation energies of P and In antisites do not depend on the $NW$ diameter. In particular, thin InP$NW$s, diameters of $\sim$13 Å, the P$_{\rm In}$ antisite exhibits a trigonal symmetry, lying at 0.15 Åfrom the $T_d$ site, followed by a metastable configuration with P$_{\rm In}$ in an interstitial position (1.15 Åfrom the $T_d$ site). We find a P$_{\rm In}$--P dissociation energy of 0.33 eV, and there is no EL2--like center for such a thin InP$NW$. However, EL2--like defects occur by increasing the $NW$ diameter. For diameters of $\sim$18 Å, the P$_{\rm In}$--P dissociation energy increases to 0.53 eV, which is 0.34 eV lower compared with the P$_{\rm In}$--P dissociation energy for InP bulk phase, 0.87 eV. We mapped the atomic displacements and calculated the relaxation energy, Franck--Condon shift, upon single excitation of P$_{\rm In}$ induced states in InP$NW$. The formation (or not) of EL2--like defects, P$_{\rm In}$--P dissociation energy barrier, and the Franck--Condon (FC) energy shift, can be tuned by the $NW$ diameter.

cond-mat.mtrl-sci↗
arXiv2006

Simple implementation of complex functionals: scaled selfconsistency

We explore and compare three approximate schemes allowing simple implementation of complex density functionals by making use of selfconsistent implementation of simpler functionals: (i) post-LDA evaluation of complex functionals at the LDA densities (or those of other simple functionals); (ii) application of a global scaling factor to the potential of the simple functional; and (iii) application of a local scaling factor to that potential. Option (i) is a common choice in density-functional calculations. Option (ii) was recently proposed by Cafiero and Gonzalez. We here put their proposal on a more rigorous basis, by deriving it, and explaining why it works, directly from the theorems of density-functional theory. Option (iii) is proposed here for the first time. We provide detailed comparisons of the three approaches among each other and with fully selfconsistent implementations for Hartree, local-density, generalized-gradient, self-interaction corrected, and meta-generalized-gradient approximations, for atoms, ions, quantum wells and model Hamiltonians. Scaled approaches turn out to be, on average, better than post-approaches, and unlike these also provide corrections to eigenvalues and orbitals. Scaled selfconsistency thus opens the possibility of efficient and reliable implementation of density functionals of hitherto unprecedented complexity.

cond-mat.mtrl-sci↗
arXiv2006

Electronic and Magnetic Properties of Mn doped Ge Nanowires

Using {\it ab initio} total energy density-functional theory calculations, we investigate the electronic, structural and magnetic properties of Manganese doped Germanium nanowires. The nanowires have been constructed along the [110] direction and the dangling bonds on the surface have been saturated by hydrogen atoms. We observed that the Mn has lower formation energy at the center of the wire when compared to regions close to the surface. The Mn-Mn coupling has lower energy for a high-spin configuration except when they are first nearest neighbors. These results show that Ge:Mn nanowires are potential candidates for ferromagnetic quasi-one dimentional systems.

cond-mat.mtrl-sci↗
arXiv2006

Hf defects in HfO2/Si

We investigate the possibility that Hf defects exist in the Si channel of HfO2 Si-based metal-oxide-semiconductor devices. We have studied, using ab initio Density Functional Theory calculations, substitutional and interstitial Hf impurities in c-Si, for various charge states. Our results indicate that 1) the tetrahedral interstitial defect is energetically more favorable than the substitutional, and 2) there are various stable charge states in the Si gap. The possible presence of these charged impurities in the Si channel could lead to a mobility reduction, due to coulombic scattering.

cond-mat.mtrl-sci↗