arXiv subjects

A. Fujimori

Publications and source records attributed to A. Fujimori.

At least 145 records · Page 8Linked to original sources

arXiv2007

Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy

Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.

cond-mat.mtrl-sci↗

arXiv2007

Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in La$_{1-x}$Sr$_{x}$MnO$_{3}$

We report the first observation of changes in the electronic structure of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (LSMO) across the filling-control metal-insulator (MI) transition by means of in situ angle-resolved photoemission spectroscopy (ARPES) of epitaxial thin films. The Fermi surface gradually disappears near the MI transition by transferring the spectral weight from the coherent band near the Fermi level ($E_{F}$) to the lower Hubbard band, whereas a pseudogap behavior also exists in the ARPES spectra in the close vicinity of $E_{F}$ for the metallic LSMO. These results indicate that the spectral weight transfer derived from strong electron-electron interaction dominates the gap formation in LSMO associated with the filling-control MI transition.

cond-mat.str-el↗

arXiv2007

Unmasking the nodal quasiparticle dynamics in cuprate superconductors using low-energy photoemission

Nodal quasiparticles of Bi2Sr2CaCu2O8 have been studied by angle-resolved photoemission spectroscopy with high momentum and energy resolution. Low-energy tunable photons have enabled us to resolve a small nodal bilayer splitting, unmasking the intrinsic single-particle scattering rate. The nodal scattering rate is abruptly suppressed upon the superconducting transition, and shows a linear energy dependence at low energies, indicating the nontrivial effect of elastic scatterings on the quasiparticles. With increasing energy, the antibonding-band scattering rate becomes higher than the bonding one. The observations imply the character of the scatterers dominant at low energies.

cond-mat.supr-con↗

arXiv2007

Electron Doping of Cuprates via Interfaces with Manganites

The electron doping of undoped high-$T_c$ cuprates via the transfer of charge from manganites (or other oxides) using heterostructure geometries is here theoretically discussed. This possibility is mainly addressed via a detailed analysis of photoemission and diffusion voltage experiments, which locate the Fermi level of manganites above the bottom of the upper Hubbard band of some cuprate parent compounds. A diagram with the relative location of Fermi levels and gaps for several oxides is presented. The procedure discussed here is generic, allowing for the qualitative prediction of the charge flow direction at several oxide interfaces. The addition of electrons to antiferromagnetic Cu oxides may lead to a superconducting state at the interface with minimal quenched disorder. Model calculations using static and dynamical mean-field theory, supplemented by a Poisson equation formalism to address charge redistribution at the interface, support this view. The magnetic state of the manganites could be antiferromagnetic or ferromagnetic. The former is better to induce superconductivity than the latter, since the spin-polarized charge transfer will be detrimental to singlet superconductivity. It is concluded that in spite of the robust Hubbard gaps, the electron doping of undoped cuprates at interfaces appears possible, and its realization may open an exciting area of research in oxide heterostructures.

cond-mat.str-el↗

arXiv2007

Critical test for Altshuler-Aronov theory: Evolution of the density of states singularity in double perovskite Sr$_2$FeMoO$_6$ with controlled disorder

With high-resolution photoemission spectroscopy measurements, the density of states (DOS) near the Fermi level ($E_\mathrm{F}$) of double perovskite Sr$_2$FeMoO$_6$ having different degrees of Fe/Mo antisite disorder has been investigated with varying temperature. The DOS near $E_\mathrm{F}$ showed a systematic depletion with increasing degree of disorder, and recovered with increasing temperature. Altshuler-Aronov (AA) theory of disordered metals well explains the dependences of the experimental results. Scaling analysis of the spectra provides experimental indication for the functional form of the AA DOS singularity.

cond-mat.mtrl-sci↗

arXiv2007

Distinct doping dependences of the pseudogap and superconducting gap La$_{2-x}$Sr$_{x}$CuO$_4$ cuprate superconductors

We have performed a temperature-dependent angle-integrated photoemission study of lightly-doped to heavily-overdoped La$_{2-x}$Sr$_{x}$CuO$_4$ and oxygen-doped La$_2$CuO$_{4.10}$. We found that both the magnitude $Δ$* of the (small) pseudogap and the temperature \textit{T}* at which the pseudogap is opened increases with decreasing hole concentration, consistent with previous studies. On the other hand, the superconducting gap $Δ_{sc}$ was found to remain small for decreasing hole concentration. The results can be explained if the superconducting gap opens only on the Fermi arc around the nodal (0,0)-($π,π$) direction while the pseudogap opens around $\sim$($π$, 0).

cond-mat.str-el↗

arXiv2007

Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers

We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 Å$. The Mott-Hubbard gap of LVO remained open at the interface, indicating that the interface is insulating unlike the LaTiO$_3$/SrTiO$_3$ multilayers. We found that the valence of V in LVO were partially converted from V$^{3+}$ to V$^{4+}$ only at the interface on the top side of the LVO layer and that the amount of V$^{4+}$ increased with LVO layer thickness. We suggest that the electronic reconstruction to eliminate the polarity catastrophe inherent in the polar heterostructure is the origin of the highly asymmetric valence change at the LVO/LAO interfaces.

cond-mat.str-el↗

arXiv2007

X-ray magnetic circular dichroism characterization of GaN/Ga1-xMnxN digital ferromagnetic heterostructure

We have investigated the magnetic properties of a GaN/Ga1-xMnxN (x = 0.1) digital ferromagnetic heterostructure (DFH) showing ferromagnetic behavior using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The Mn L2,3-edge XAS spectra were similar to those of Ga1-xMnxN random alloy thin films, indicating a substitutional doping of high concentration Mn into GaN. From the XMCD measurements, it was revealed that paramagnetic and ferromagnetic Mn atoms coexisted in the Ga1-xMnxN digital layers. The ferromagnetic moment per Mn atom estimated from XMCD agreed well with that estimated from SQUID measurements. From these results, we conclude that the ferromagnetic behavior of the GaN/Ga1-xMnxN DFH sample arises only from substitutional Mn2+ ions in the Ga1-xMnxN digital layers and not from ferromagnetic precipitates. Subtle differences were also found from the XMCD spectra between the electronic states of the ferromagnetic and paramagnetic Mn2+ ions.

cond-mat.mtrl-sci↗

arXiv2007

Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion

We have performed an $in$-$situ$ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep ($\sim$ 70 Å) region of the GaN substrates and that the line shapes of Mn 3$d$ partial density of states obtained by resonant photoemission measurements was close to that of Ga$_{1-x}$Mn$_x$N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Mn $L$-edge, it was revealed that the doped Mn ions were in the divalent Mn$^{2+}$ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using $p$-type GaN substrates while samples using $n$-type GaN substrates showed only paramagnetism.

cond-mat.mtrl-sci↗

arXiv2006

Lanthanide substitution effects in electron-doped high-Tc superconductors studied by angle-resolved photoemission spectroscopy

We have performed an angle-resolved photoemission study of the electron-doped high-Tc superconductors (HTSCs) Sm_{1.85}Ce_{0.15}CuO_{4} (SCCO) and Eu_{1.85}Ce_{0.15}CuO_{4} (ECCO). Around the nodal point (pi/2, pi/2), we observed an energy gap at the Fermi level (EF) for both samples, resulting from the strong effects of antiferromagnetism. The magnitude of this gap in ECCO is larger than that in SCCO, implying that the effects of antiferromagnetism in ECCO are stronger than that in SCCO. Also, we quantitatively confirmed the effects of antiferromagnetism by the band dispersions to tight-binding calculation.

cond-mat.supr-con↗

arXiv2006

The hierarchy of multiple many-body interaction scales in high-temperature superconductors

To date, angle-resolved photoemission spectroscopy has been successful in identifying energy scales of the many-body interactions in correlated materials, focused on binding energies of up to a few hundred meV below the Fermi energy. Here, at higher energy scale, we present improved experimental data from four families of high-Tc superconductors over a wide doping range that reveal a hierarchy of many-body interaction scales focused on: the low energy anomaly ("kink") of 0.03-0.09eV, a high energy anomaly of 0.3-0.5eV, and an anomalous enhancement of the width of the LDA-based CuO2 band extending to energies of ~ 2 eV. Besides their universal behavior over the families, we find that all of these three dispersion anomalies also show clear doping dependence over the doping range presented.

cond-mat.supr-con↗

arXiv2006

Distinct Fermi-Momentum Dependent Energy Gaps in Deeply Underdoped Bi2212

We use angle-resolved photoemission spectroscopy applied to deeply underdoped cuprate superconductors Bi2Sr2(Ca,Y)Cu2O8 (Bi2212) to reveal the presence of two distinct energy gaps exhibiting different doping dependence. One gap, associated with the antinodal region where no coherent peak is observed, increases with underdoping - a behavior known for more than a decade and considered as the general gap behavior in the underdoped regime. The other gap, associated with the near nodal regime where a coherent peak in the spectrum can be observed, does not increase with less doping - a behavior not observed in the single particle spectra before. We propose a two-gap scenario in momentum space that is consistent with other experiments and may contain important information on the mechanism of high-Tc superconductivity.

cond-mat.supr-con↗

arXiv2006

Photoemission study of TiO2/VO2 interfaces

We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator transition temperature of the VO$_2$ thin films, $\sim 300$ K, metallic states were not observed for the interfaces with TiO$_2$, in contrast with the interfaces between the band insulator SrTiO$_3$ and the Mott insulator LaTiO$_3$ in spite of the fact that both TiO$_2$ and SrTiO$_3$ are band insulators with $d^0$ electronic configurations and both VO$_2$ and LaTiO$_3$ are Mott insulators with $d^1$ electronic configurations. We discuss possible origins of this difference and suggest the importance of the polarity discontinuity of the interfaces. Stronger incoherent part was observed in r-TiO$_2$/VO$_2$ than in a-TiO$_2$/VO$_2$, suggesting Ti-V atomic diffusion due to the higher deposition temperature for r-TiO$_2$/VO$_2$.

cond-mat.str-el↗

arXiv2006

Low-Energy Electronic Structure of the High-Tc Cuprates La2-xSrxCuO4 Studied by Angle-resolved Photoemission Spectroscopy

We have performed a systematic angle-resolved photoemission spectroscopy (ARPES) study of the high-Tc cuprates La2-xSrxCuO4, ranging from the underdoped insulator to the superconductor to the overdoped metal. We have revealed a systematic doping evolution of the band dispersions and (underlying) Fermi surfaces, pseudogap and quasi-particle features under the influence of strong electron-electron interaction and electron-phonon interaction. The unusual transport and thermodynamic properties are explained by taking into account the pseudogap opening and the Fermi arc formation, due to which the carrier number decreases as the doped hole concentration decreases.

cond-mat.str-el↗

arXiv2006

Soft x-ray magnetic circular dichroism study of weakly ferromagnetic Zn$_{1-x}$V$_x$O thin film

We performed a soft x-ray magnetic circular dichroism (XMCD) study of a Zn$_{1-x}$V$_x$O thin film which showed small ferromagnetic moment. Field and temperature dependences of V 2$p$ XMCD signals indicated the coexistence of Curie-Weiss paramagnetic, antiferromagnetic, and possibly ferromagnetic V ions, quantitatively consistent with the magnetization measurements. We attribute the paramagnetic signal to V ions substituting Zn sites which are somewhat elongated along the c-axis.

cond-mat.mtrl-sci↗

arXiv2006

Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p core-level spectra had both V3+ and V4+ components, and above 2 unit cell thick LaVO3, the structures exhibited spectra similar to bulk samples. The atomically flat surfaces enabled study of the emission angle dependence, which indicates the V4+ is localized to the topmost layer. These results demonstrate the potential for probing interface electronic structure in oxide ultrathin films by surface spectroscopy.

cond-mat.mtrl-sci↗

arXiv2006

Temperature Dependence of the Chemical Potential in NaxCoO2: Implications for the Large Thermoelectric Power

We have performed a temperature-dependent photoemission study of a NaxCoO2 (x~0.8) epitaxial thin film prepared by the reactive solid-phase epitaxy method. The chemical potential shift as a function of temperature was derived from the Co 3d peak shift, and revealed a crossover from the degenerate Fermion state at low temperatures to the correlated hopping state of Co3+/Co4+ mixed-valence at high temperatures. This suggests that the large thermoelectric power at high temperatures should be considered in the correlated hopping picture.

cond-mat.str-el↗

arXiv2006

Chemical potential shift and spectral weight transfer in Pr$_{1-x}$Ca$_x$MnO$_3$ revealed by photoemission spectroscopy

We have studied the chemical potential shift and changes in the electronic density of states near the Fermi level ($E_F$) as a function of carrier concentration in Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO, $0.2 \le x \le 0.65$) through the measurements of photoemission spectra. The results showed that the chemical potential shift was suppressed for $x \agt 0.3$, where the charge exchange (CE)-type antiferromagnetic charge-ordered state appears at low temperatures. We consider this observation to be related to charge self-organization such as stripe formation on a microscopic scale in this composition range. Together with the previous observation of monotonous chemical potential shift in La$_{1-x}$Sr$_x$MnO$_3$, we conclude that the tendency toward the charge self-organization increases with decreasing bandwidth. In the valence band, spectral weight of the Mn 3$d$ $e_g$ electrons in PCMO was transferred from $\sim$ 1 eV below $E_F$ to the region near $E_F$ with hole doping, leading to a finite intensity at $E_F$ even in the paramagnetic insulating phase for $x \agt 0.3$, probably related with the tendency toward charge self-organization. The finite intensity at $E_F$ in spite of the insulating transport behavior is consistent with fluctuations involving ferromagnetic metallic states.

cond-mat.str-el↗