arXiv subjects

A. Fujimori

Publications and source records attributed to A. Fujimori.

At least 127 records · Page 7Linked to original sources

arXiv2008

Chemical potential landscape in band filling and bandwidth-control of manganites: Photoemission spectroscopy measurements

We have studied the effects of band filling and bandwidth control on the chemical potential in perovskite manganites $R_{1-x}A_x$MnO$_3$ ($R$ : rare earth, $A$ : alkaline earth) by measurements of core-level photoemission spectra. A suppression of the doping-dependent chemical potential shift was observed in and around the CE-type charge-ordered composition range, indicating that there is charge self-organization such as stripe formation or its fluctuations. As a function of bandwidth, we observed a downward chemical potential shift with increasing bandwidth due to the reduction of the orthorhombic distortion. After subtracting the latter contribution, we found an upward chemical potential shift in the ferromagnetic metallic region $0.3<x<0.5$, which we attribute to the enhancement of double-exchange interaction involving the Jahn-Teller-split $e_g$ band.

cond-mat.str-el↗

arXiv2008

Remote hole-doping of Mott insulators on the nanometer scale

At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.

cond-mat.str-el↗

arXiv2008

Bulk-like d band of SrVO3 under a self-protective cap layer

We have performed a detailed angel-resolved photoemission spectroscopy study of in-situ prepared SrVO3 thin films. Naturally capped by a ``transparent'' protective layer, contributions from surface states centered at ~ -1.5 eV are dramatically reduced, enabling us to study the bulk V 3d states. We have observed a clear band dispersion not only in the coherent quasiparticle part but also in the incoherent part, which are reproduced by dynamical mean-field theory calculations and the spectral weight of the incoherent part is stronger within the Fermi surface.

cond-mat.str-el↗

arXiv2008

Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar$^+$-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2$p$ core-level and Mn 3$d$ valence-band spectra of the Mn/GaAs (001) sample heated to 600 $^{\circ}$C were similar to those of Ga$_{1-x}$Mn$_x$As, zinc-blende-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn 3$d$ states were essentially localized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.

cond-mat.mtrl-sci↗

arXiv2008

Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.

cond-mat.mtrl-sci↗

arXiv2008

Local electronic structure of Cr in the II-VI diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te

The electronic structure of the Cr ions in the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te ($x=0.03$ and 0.15) thin films has been investigated using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). Magnetic-field ($H$) and temperature ($T$) dependences of the Cr $2p$ XMCD spectra well correspond to the magnetization measured by a SQUID magnetometer. The line shape of the Cr $2p$ XMCD spectra is independent of $H$, $T$, and $x$, indicating that the ferromagnetism is originated from the same electronic states of the Cr ion. Cluster-model analysis indicates that although there are two or more kinds of Cr ions in the Zn$_{1-x}$Cr$_x$Te samples, the ferromagnetic XMCD signal is originated from Cr ions substituted for the Zn site. The Cr 3d partial density of states extracted using Cr $2p \to 3d$ resonant PES shows a broad feature near the top of the valence band, suggesting strong $s$,$p$-$d$ hybridization. No density of states is detected at the Fermi level, consistent with their insulating behavior. Based on these findings, we conclude that double exchange mechanism cannot explain the ferromagnetism in Zn$_{1-x}$Cr$_{x}$Te.

cond-mat.mtrl-sci↗

arXiv2008

Effects of chemical pressure on the Fermi surface and band dispersion in the electron-doped high-Tc superconductors

We have performed angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles electronic structure calculations on the electron-doped high-Tc superconductors Ln1.85Ce0.15CuO4 (Ln = Nd, Sm, and Eu). The observed Fermi surface and band dispersion show such changes that with decreasing ionic size of Ln3+, the curvature of the Fermi surface or -t'/t decreases, where t and t' are transfer integrals between the nearest-neighbor and next-nearestneighbor Cu sites, respectively. The increase of t with chemical pressure is found to be significant, which may explain the apparently inconsistent behavior seen in the hole-doped La2-xSrxCuO4 under epitaxial strain [M. Abrecht et al., Phys. Rev. Lett. 91, 057002 (2003)]. A gap due to the antiferromagnetism opens even in the nodal region for the Sm and Eu compounds, and the gap size increases in going from Ln = Sm to Eu.

cond-mat.supr-con↗

arXiv2008

Doping evolution of the electronic structure in the single-layer cuprates Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$: Comparison with other single-layer cuprates

We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca$_{2-x}$Na$_{x}$CuO$_{2}$Cl$_2$ (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La$_{2-x}$Sr$_{x}$CuO$_{4}$ (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tight-binding fit, and the deduced next-nearest-neighbor hopping integral $t'$ also confirm the similarity to Na-CCOC and the difference from LSCO.

cond-mat.supr-con↗

arXiv2008

Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$

The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.

cond-mat.mtrl-sci↗

arXiv2008

Nature of magnetic coupling between Mn ions in as-grown Ga$_{1-x}$Mn$_{x}$As studied by x-ray magnetic circular dichroism

The magnetic properties of as-grown Ga$_{1-x}$Mn$_{x}$As have been investigated by the systematic measurements of temperature and magnetic field dependent soft x-ray magnetic circular dichroism (XMCD). The {\it intrinsic} XMCD intensity at high temperatures obeys the Curie-Weiss law, but residual spin magnetic moment appears already around 100 K, significantly above Curie temperature ($T_C$), suggesting that short-range ferromagnetic correlations are developed above $T_C$. The present results also suggest that antiferromagnetic interaction between the substitutional and interstitial Mn (Mn$_{int}$) ions exists and that the amount of the Mn$_{int}$ affects $T_C$.

cond-mat.mtrl-sci↗

arXiv2007

Effects of electron-phonon coupling in angle-resolved photoemission spectra of SrTiO3

We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at the valence band maxima at the M [k = (pi/a, pi/a, 0)]and R [k = (pi/a, pi/a, pi/a)] points start from ~ 3.3 eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by ~ 500 meV from the 3.3 eV threshold. Because the bands at M and R have pure O 2p character, we attribute this ~ 500 meV shift to strong coupling of the oxygen p hole with optical phonons in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.

cond-mat.mtrl-sci↗

arXiv2007

Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni$_{1-x}$Fe$_x$O with hole doping

The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li doping. In contrast, the Fe$^{3+}$ intensity increased with Li doping relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emission near valence-band maximum increased with Li content, consistent with the increase of electrical conductivity. Based on these findings, percolation of bound magnetic polarons is proposed as an origin of the ferromagnetic behavior.

cond-mat.mtrl-sci↗

arXiv2007

Soft x-ray magnetic circular dichroism study of Ca_1-xSr_xRuO_3 across the ferromagnetic quantum phase transition

Ca_1-xSr_xRuO_3, which is ferromagnetic for Sr concentration x > 0.3, has been studied by x-ray magnetic circular dichroism (XMCD) in Ru 3p and O 1s core-level x-ray absorption. XMCD signals appear at x ~ 0.3 and monotonically increases with x in the ferromagnetic phase. While the monotonic increase of the XMCD signals with x is of a typical Stoner-type, the absence of appreciable change in the spectral line shapes of both the Ru 3p and O 1s XMCD spectra indicate that the itinerant-electron ferromagnetism in Ca_1-xSr_xRuO_3 is influenced by strong electron correlation.

cond-mat.str-el↗

arXiv2007

Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization

By means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.

cond-mat.mtrl-sci↗

arXiv2007

Chemical potential shift induced by double-exchange and polaronic effects in Nd_{1-x}Sr_xMnO_3

We have studied the chemical potential shift as a function of temperature in Nd$_{1-x}$Sr$_x$MnO$_3$ (NSMO) by measurements of core-level photoemission spectra. For ferromagnetic samples ($x=0.4$ and 0.45), we observed an unusually large upward chemical potential shift with decreasing temperature in the low-temperature region of the ferromagnetic metallic (FM) phase. This can be explained by the double-exchange (DE) mechanism if the $e_g$ band is split by dynamical/local Jahn-Teller effect. The shift was suppressed near the Curie temperature ($T_C$), which we attribute to the crossover from the DE to lattice-polaron regimes.

cond-mat.str-el↗

arXiv2007

X-ray magnetic circular dichroism and photoemission study of the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te

We have performed x-ray magnetic circular dichroism (XMCD) and valence-band photoemission studies of the diluted ferromagnetic semiconductor Zn$_{1-x}$Cr$_x$Te. XMCD signals due to ferromagnetism were observed at the Cr 2p absorption edge. Comparison with atomic multiplet calculations suggests that the magnetically active component of the Cr ion was divalent under the tetrahedral crystal field with tetragonal distortion along the crystalline a-, b-, and c-axes. In the valence-band spectra, spectral weight near the Fermi level was strongly suppressed, suggesting the importance of Jahn-Teller effect and the strong Coulomb interaction between the Cr 3d electrons.

cond-mat.mtrl-sci↗

arXiv2007

In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations

We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3 (PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of epitaxial strain on the electronic structure. We found that the chemical potential shifted monotonically with doping, unlike bulk PCMO, implying the disappearance of incommensurate charge fluctuations of bulk PCMO. In the valence-band spectra, we found a doping-induced energy shift toward the Fermi level (E_F) but there was no spectral weight transfer, which was observed in bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions determined by angle-resolved photoemission spectroscopy and could not be explained by the metallic band structure of the C-type antiferromagnetic state, probably due to localization of electrons along the ferromagnetic chain direction or due to another type of spin-orbital ordering.

cond-mat.str-el↗

arXiv2007

Temperature-dependent photoemission spectral weight transfer and chemical potential shift in Pr$_{1-x}$Ca$_x$MnO$_3$ : Implications for charge density modulation

We have studied the temperature dependence of the photoemission spectra of Pr$_{1-x}$Ca$_x$MnO$_3$ (PCMO) with $x=0.25$, 0.3 and 0.5. For $x=0.3$ and 0.5, we observed a gap in the low-temperature CE-type charge-ordered (CO) phase and a pseudogap with a finite intensity at the Fermi level ($E_F$) in the high-temperature paramagnetic insulating (PI) phase. Within the CO phase, the spectral intensity near $E_F$ gradually increased with temperature. These observations are consistent with the results of Monte Carlo simulations on a model including charge ordering and ferromagnetic fluctuations [H. Aliaga {\it et al.} Phys. Rev. B {\bf 68}, 104405 (2003)]. For $x=0.25$, on the other hand, little temperature dependence was observed within the low-temperature ferromagnetic insulating (FI) phase and the intensity at $E_F$ remained low in the high-temperature PI phase. We attribute the difference in the temperature dependence near $E_F$ between the CO and FI phases to the different correlation lengths of orbital order between both phases. Furthermore, we observed a chemical potential shift with temperature due to the opening of the gap in the FI and CO phases. The doping dependent chemical potential shift was recovered at low temperatures, corresponding to the disappearance of the doping dependent change of the modulation wave vector. Spectral weight transfer with hole concentration was clearly observed at high temperatures but was suppressed at low temperatures. We attribute this observation to the fixed periodicity with hole doping in PCMO at low temperatures.

cond-mat.str-el↗