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A. K. Bakarov

Publications and source records attributed to A. K. Bakarov.

68 records · Page 4Linked to original sources

Magnetic field induced transition in a wide parabolic well superimposed with superlattice

We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau filling factor $ν\approx3$ and is signaled by the appearance of the strong and developing fractional quantum Hall (FQH) states and by the enhanced slope of the Hall resistance. We attribute the transition to the possible electron localization in the x-y plane inside the lateral wells, and formation of the FQH states in the central well of the superlattice, driven by electron-electron interaction.

cond-mat.mes-hall↗

Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

cond-mat.mes-hall↗

Magnetoresistance oscillations in multilayer systems - triple quantum wells

Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous investigations of these magneto-intersubband (MIS) oscillations in two-subband systems, we report on both experimental and theoretical studies of such a phenomenon in three-subband systems realized in triple quantum wells. We show that the presence of more than two subbands leads to a qualitatively different MIS oscillation picture, described as a superposition of several oscillating contributions. Under a continuous microwave irradiation, the magnetoresistance of triple-well systems exhibits an interference of MIS oscillations and microwaveinduced resistance oscillations. The theory explaining these phenomena is presented in the general form, valid for an arbitrary number of subbands. A comparison of theory and experiment allows us to extract temperature dependence of quantum lifetime of electrons and to confirm the applicability of the inelastic mechanism of microwave photoresistance for the description of magnetotransport in multilayer systems.

cond-mat.mes-hall↗

The Coulomb Blockade Resonant Breakdown Caused By The Quantum Dot Mechanical Oscillations

Influence of forced mechanical vibrations of a suspended single-electron transistor on electron tunneling through the quantum dot limited by the Coulomb blockade is investigated. It is shown that mechanical oscillations of the quantum dot lead to the Coulomb blockade breakdown, shown in sharp resonant peaks in the transistor conductance dependence on the excitation frequency at values corresponding to the mechanical oscillations eigen modes. Physical mechanism of the observed effect is considered. It is presumably connected with oscillations of the mutual electrical capacitances between the quantum dot and surrounding electrodes.

cond-mat.mes-hall↗

High order fractional microwave induced resistance oscillations in 2D systems

We report on the observation of microwave-induced resistance oscillations associated with the fractional ratio n/m of the microwave irradiation frequency to the cyclotron frequency for m up to 8 in a two-dimensional electron system with high electron density. The features are quenched at high microwave frequencies independent of the fractional order m. We analyze temperature, power, and frequency dependencies of the magnetoresistance oscillations and discuss them in connection with existing theories.

cond-mat.mes-hall↗

Nonlinear transport and oscillating magnetoresistance in double quantum wells

We study the evolution of low-temperature magnetoresistance in double quantum wells in the region below 1 Tesla as the applied current density increases. A flip of the magneto-intersubband oscillation peaks, which occurs as a result of the current-induced inversion of the quantum component of resistivity, is observed. We also see splitting of these peaks as another manifestation of nonlinear behavior, specific for the two-subband electron systems. The experimental results are quantitatively explained by the theory based on the kinetic equation for the isotropic non-equilibrium part of electron distribution function. The inelastic scattering time is determined from the dependence of the inversion magnetic field on the current.

cond-mat.mes-hall↗

Interference oscillations of microwave photoresistance in double quantum wells

We observe oscillatory magnetoresistance in double quantum wells under microwave irradiation. The results are explained in terms of the influence of subband coupling on the frequency-dependent photoinduced part of the electron distribution function. As a consequence, the magnetoresistance demonstrates the interference of magneto-intersubband oscillations and conventional microwave- induced resistance oscillations.

cond-mat.mes-hall↗

Resonance oscillations of magnetoresistance in double quantum wells

We present experimental and theoretical studies of the magnetoresistance oscillations induced by resonance transitions of electrons between tunnel-coupled states in double quantum wells. The suppression of these oscillations with increasing temperature is irrelevant to the thermal broadening of the Fermi distribution and reflects the temperature dependence of the quantum lifetime of electrons. The gate control of the period and amplitude of the oscillations is demonstrated.

cond-mat.mes-hall↗

Zero differential resistance state of two dimensional electron systems in strong magnetic fields

Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance, which occurs above threshold value $I_{th}$ of the direct current. The state depends significantly on the temperature and is not observable above several Kelvins. Additional analysis shows lack of the linear stability of the 2D electron systems at $I>I_{th}$ and inhomogeneous, non-stationary pattern of the electric current in the zero differential resistance state. We suggest that the dc bias induced redistribution of the 2D electrons in energy space is the dominant mechanism leading to the new electron state.

cond-mat.mes-hall↗

Giant Magnetoresistance Oscillations Induced by Microwave Radiation and a Zero-Resistance State in a 2D Electron System with a Moderate Mobility

The effect of a microwave field in the frequency range from 54 to 140 $\mathrm{GHz}$ on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than $10^6$ $\mathrm{cm^2/Vs}$ is investigated. In the given two-dimensional system under the effect of microwave radiation, giant resistance oscillations are observed with their positions in magnetic field being determined by the ratio of the radiation frequency to the cyclotron frequency. Earlier, such oscillations had only been observed in GaAs/AlGaAs heterostructures with much higher mobilities. When the samples under study are irradiated with a 140-$\mathrm{GHz}$ microwave field, the resistance corresponding to the main oscillation minimum, which occurs near the cyclotron resonance, appears to be close to zero. The results of the study suggest that a mobility value lower than $10^6$ $\mathrm{cm^2/Vs}$ does not prevent the formation of zero-resistance states in magnetic field in a two-dimensional system under the effect of microwave radiation.

cond-mat.mes-hall↗

Effect of DC electric field on longitudinal resistance of two dimensional electrons in a magnetic field

The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance by the electric field is observed in magnetic fields at which the Landau quantization of electron motion occurs. The phenomenon survives at high temperature where Shubnikov de Haas oscillations are absent. The scale of the electric fields essential for the effect is found to be proportional to temperature in the low temperature limit. We suggest that the strong reduction of the longitudinal resistance is the result of a nontrivial change in the distribution function of 2D electrons induced by the DC electric field. Comparison of the data with recent theory yields the inelastic electron-electon scattering time $τ_{in}$ and the quantum scattering time $τ_q$ of 2D electrons at high temperatures, a regime where previous methods were not successful.

cond-mat.mes-hall↗

Two Types of Microwave-Induced Magnetoresistance Oscillations in a 2D Electron Gas at Large Filling Factors

The influence of microwave radiation (1.2-140 GHz) on resistance of high-mobility two-dimensional electron gas in GaAs quantum wells is studied. Two series of microwave-induced magnetoresistance oscillations periodic in 1/B were observed under microwave radiation. The periods of oscillations are determined by the microwave frequency and power, correspondingly. The experimental data is qualitatively explained by photon-assisted transport and Zener tunneling between Landau orbits.

cond-mat.mes-hall↗

Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas

The results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $Tτ$-parameter ($Tτ\simeq 0.03-0.8$), where $τ$ is the transport relaxation time. A comprehensive analysis of the magnetic field and temperature dependences of the resistivity and the conductivity tensor components allows us to separate the ballistic and diffusion parts of the correction. It is shown that the ballistic part renormalizes in the main the electron mobility, whereas the diffusion part contributes to the diagonal and does not to the off-diagonal component of the conductivity tensor. We have experimentally found the values of the Fermi-liquid parameters describing the electron-electron contribution to the transport coefficients, which are found in a good agreement with the theoretical results.

cond-mat.dis-nn↗