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A. K. Bhattacharya

Publications and source records attributed to A. K. Bhattacharya.

4 recordsLinked to original sources

Maximum entropy and the problem of moments: A stable algorithm

We present a technique for entropy optimization to calculate a distribution from its moments. The technique is based upon maximizing a discretized form of the Shannon entropy functional by mapping the problem onto a dual space where an optimal solution can be constructed iteratively. We demonstrate the performance and stability of our algorithm with several tests on numerically difficult functions. We then consider an electronic structure application, the electronic density of states of amorphous silica and study the convergence of Fermi level with increasing number of moments.

cond-mat.dis-nn

Structure and stability of copper clusters : A tight-binding molecular dynamics study

In this paper we propose a tight-binding molecular dynamics with parameters fitted to first-principles calculations on the smaller clusters and with an environment correction, to be a powerful technique for studying large transition/noble metal clusters. In particular, the structure and stability of $Cu_n$ clusters for $n=3-55$ are studied by using this technique. The results for small $Cu_n$ clusters ($n=3-9$) show good agreement with {\it ab initio} calculations and available experimental results. In the size range $10\le n \le 55$ most of the clusters adopt icosahedral structure which can be derived from the 13-atom icosahedron, the polyicosahedral 19-, 23-, and 26-atom clusters and the 55-atom icosahedron, by adding or removing atoms. However, a local geometrical change from icosahedral to decahedral structure is observed for $n = 40-44$ and return to the icosahedral growth pattern is found at $n=45$ which continues. Electronic "magic numbers" ($n=2$, 8, 20, 34, 40) in this regime are correctly reproduced. Due to electron pairing in HOMOs, even-odd alternation is found. A sudden loss of even-odd alternation in second difference of cluster binding energy, HOMO-LUMO gap energy and ionization potential is observed in the region $n\sim40$ due to structural change there. Interplay between electronic and geometrical structure is found.

physics.atm-clus

Electronic and Optical Properties of ZnIn$_2$Te$_4$

Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn$_2$Te$_4$ have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn$_2$Te$_4$ is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function $ε(E) = ε_1(E) + iε_2(E)$ reveal distinct structures at energies of the critical points in the Brillouin zone.

cond-mat.mtrl-sci

An augmented space recursion study of the electronic structure of rough epitaxial overlayers

In this communication we propose the use of the Augmented Space Recursion as an ideal methodology for the study of electronic and magnetic structures of rough surfaces, interfaces and overlayers. The method can take into account roughness, short-ranged clustering effects, surface dilatation and interdiffusion. We illustrate our method by an application of Fe overlayer on Ag (100) surface.

cond-mat.mtrl-sci