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Electronic and Optical Properties of ZnIn$_2$Te$_4$

Biplab Ganguli·Kamal Krishna Saha·Tanusri Saha-Dasgupta·Abhijit Mookerjee·A. K. Bhattacharya
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Abstract

Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn$_2$Te$_4$ have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn$_2$Te$_4$ is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function $ε(E) = ε_1(E) + iε_2(E)$ reveal distinct structures at energies of the critical points in the Brillouin zone.

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Biplab Ganguli, Kamal Krishna Saha, Tanusri Saha-Dasgupta, Abhijit Mookerjee, A. K. Bhattacharya. 2002-12-05. Electronic and Optical Properties of ZnIn$_2$Te$_4$. https://arxiv.org/abs/cond-mat/0212121

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