arXiv subjects

A. K. Geim

Publications and source records attributed to A. K. Geim.

At least 181 records · Page 10Linked to original sources

arXiv2007

Chaotic Dirac billiard in graphene quantum dots

We report on transport characteristics of quantum dot devices etched entirely in graphene. At large sizes, they behave as conventional single-electron transistors, exhibiting periodic Coulomb blockade peaks. For quantum dots smaller than 100 nm, the peaks become strongly non-periodic indicating a major contribution of quantum confinement. Random peak spacing and its statistics are well described by the theory of chaotic neutrino (Dirac) billiards. Short constrictions of only a few nm in width remain conductive and reveal a confinement gap of up to 0.5eV, which demonstrates the in-principle possibility of molecular-scale electronics based on graphene.

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arXiv2007

A graphene-based electrochemical switch

Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more than six orders of magnitude, which enables reversible bipolar switching devices. The effect is explained by a chemical reaction of graphene with hydrogen (H+) and hydroxyl (OH-), which are catalytically generated from water molecules in the sub-stochiometric silicon oxide gate dielectric. The reactive species attach to graphene making it nonconductive but the process can subsequently be reversed by short current pulses that cause rapid local annealing. We believe that the demonstrated electrochemical field effect devices are viable candidates for future logic circuits, non-volatile memories and novel neuromorphic processing concepts.

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arXiv2007

Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

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arXiv2007

Making graphene visible

Microfabrication of graphene devices used in many experimental studies currently relies on the fact that graphene crystallites can be visualized using optical microscopy if prepared on top of silicon wafers with a certain thickness of silicon dioxide. We study graphene's visibility and show that it depends strongly on both thickness of silicon dioxide and light wavelength. We have found that by using monochromatic illumination, graphene can be isolated for any silicon dioxide thickness, albeit 300 nm (the current standard) and, especially, approx. 100 nm are most suitable for its visual detection. By using a Fresnel-law-based model, we quantitatively describe the experimental data without any fitting parameters.

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arXiv2007

Raman Fingerprint of Charged Impurities in Graphene

We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.

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arXiv2007

Electron scattering on microscopic corrugations in graphene

We discuss various scattering mechanisms for Dirac fermions in single-layer graphene. It is shown that scattering on a short-range potential (due to, for example, neutral impurities) is mostly irrelevant for electronic quality of graphene, which is likely to be controlled by charged impurities and ripples (microscopic corrugations of a graphene sheet). The latter are an inherent feature of graphene due to its two-dimensional nature and can also be an important factor in defining the electron mean free path. We show that certain types of ripples create a long-range scattering potential, similar to Coulomb scatterers, and result in charge-carrier mobility practically independent on carrier concentration, in agreement with experimental observations.

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arXiv2007

Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at $Γ$. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.

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arXiv2007

Detection of Individual Gas Molecules Absorbed on Graphene

The ultimate aspiration of any detection method is to achieve such a level of sensitivity that individual quanta of a measured value can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity. The fundamental reason limiting the resolution of such sensors is fluctuations due to thermal motion of charges and defects which lead to intrinsic noise exceeding the sought-after signal from individual molecules, usually by many orders of magnitude. Here we show that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphenes surface. The adsorbed molecules change the local carrier concentration in graphene one by one electron, which leads to step-like changes in resistance. The achieved sensitivity is due to the fact that graphene is an exceptionally low-noise material electronically, which makes it a promising candidate not only for chemical detectors but also for other applications where local probes sensitive to external charge, magnetic field or mechanical strain are required.

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arXiv2007

Cyclotron Resonance study of the electron and hole velocity in graphene monolayers

We report studies of cyclotron resonance in monolayer graphene. Cyclotron resonance is detected using the photoconductive response of the sample for several different Landau level occupancies. The experiments measure an electron velocity at the K- (Dirac) point of $c_{K}^{*}$ = 1.093 x 10$^{6}$ ms$^{-1}$ and in addition detect a significant asymmetry between the electron and hole bands, leading to a difference in the electron and hole velocities of 5% by energies of 125 meV away from the Dirac point.

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arXiv2007

Graphene Spin Valve Devices

Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field effect electrode can modulate the conductivity of these graphene films makes them exciting potential candidates for spin electronic devices.

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arXiv2007

Molecular Doping of Graphene

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambient conditions [1-4]. The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical doping without significant change in mobility has improved graphene's prospects further [13]. However, to find optimal dopants and, more generally, to progress towards graphene-based electronics requires understanding the physical mechanism behind the chemical doping, which has been lacking so far. Here, we present the first joint experimental and theoretical investigation of adsorbates on graphene. We elucidate a general relation between the doping strength and whether or not adsorbates have a magnetic moment: The paramagnetic single NO2 molecule is found to be a strong acceptor, whereas its diamagnetic dimer N2O4 causes only weak doping. This effect is related to the peculiar density of states of graphene, which provides an ideal situation for model studies of doping effects in semiconductors. Furthermore, we explain recent results on its "chemical sensor" properties, in particular, the possibility to detect a single NO2 molecule [13].

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arXiv2007

On the roughness of single- and bi-layer graphene membranes

We present a detailed transmission electron microscopy and electron diffraction study of the thinnest possible membrane, a single layer of carbon atoms suspended in vacuum and attached only at its edges. Membranes consisting of two graphene layers are also reported. We find that the membranes exhibit an apparently random spontaneous curvature that is strongest in single-layer membranes. A direct visualization of the roughness is presented for two-layer membranes where we used the variation of diffracted intensities with the local orientation of the membrane.

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arXiv2007

The rise of graphene

Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

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arXiv2007

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.

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arXiv2007

The structure of suspended graphene sheets

The recent discovery of graphene has sparked significant interest, which has so far been focused on the peculiar electronic structure of this material, in which charge carriers mimic massless relativistic particle. However, the structure of graphene - a single layer of carbon atoms densely packed in a honeycomb crystal lattice - is also puzzling. On the one hand, graphene appears to be a strictly two-dimensional (2D) material and exhibits such a high crystal quality that electrons can travel submicron distances without scattering. On the other hand, perfect 2D crystals cannot exist in the free state, according to both theory and experiment. This is often reconciled by the fact that all graphene structures studied so far were an integral part of larger 3D structures, either supported by a bulk substrate or embedded in a 3D matrix. Here we report individual graphene sheets freely suspended on a microfabricated scaffold in vacuum or air. These membranes are only one atom thick and still display a long-range crystalline order. However, our studies by transmission electron microscopy (TEM) have revealed that suspended graphene sheets are not perfectly flat but exhibit intrinsic microscopic roughening such that the surface normal varies by several degrees and out-of-plane deformations reach 1 nm. The atomically-thin single-crystal membranes offer an ample scope for fundamental research and new technologies whereas the observed corrugations in the third dimension may shed light on subtle reasons behind the stability of 2D crystals.

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arXiv2006

Chiral tunneling and the Klein paradox in graphene

The so-called Klein paradox - unimpeded penetration of relativistic particles through high and wide potential barriers - is one of the most exotic and counterintuitive consequences of quantum electrodynamics (QED). The phenomenon is discussed in many contexts in particle, nuclear and astro- physics but direct tests of the Klein paradox using elementary particles have so far proved impossible. Here we show that the effect can be tested in a conceptually simple condensed-matter experiment by using electrostatic barriers in single- and bi-layer graphene. Due to the chiral nature of their quasiparticles, quantum tunneling in these materials becomes highly anisotropic, qualitatively different from the case of normal, nonrelativistic electrons. Massless Dirac fermions in graphene allow a close realization of Klein's gedanken experiment whereas massive chiral fermions in bilayer graphene offer an interesting complementary system that elucidates the basic physics involved.

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arXiv2006

Strong suppression of weak (anti)localization in graphene

Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this weak-localization magnetoresistance is strongly suppressed and, in some cases, completely absent. This unexpected observation is attributed to mesoscopic corrugations of graphene sheets which cause a dephasing effect similar to that of a random magnetic field.

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arXiv2006

The Raman Fingerprint of Graphene

Graphene is the two-dimensional (2d) building block for carbon allotropes of every other dimensionality. It can be stacked into 3d graphite, rolled into 1d nanotubes, or wrapped into 0d fullerenes. Its recent discovery in free state has finally provided the possibility to study experimentally its electronic and phonon properties. Here we show that graphene's electronic structure is uniquely captured in its Raman spectrum that clearly evolves with increasing number of layers. Raman fingerprints for single-, bi- and few-layer graphene reflect changes in the electronic structure and electron-phonon interactions and allow unambiguous, high-throughput, non-destructive identification of graphene layers, which is critically lacking in this emerging research area.

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