arXiv subjects

A. K. Geim

Publications and source records attributed to A. K. Geim.

194 records · Page 11Linked to original sources

arXiv2006

Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene

There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behavior in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies.

cond-mat.mes-hall↗

arXiv2005

Two-Dimensional Gas of Massless Dirac Fermions in Graphene

Electronic properties of materials are commonly described by quasiparticles that behave as non-relativistic electrons with a finite mass and obey the Schroedinger equation. Here we report a condensed matter system where electron transport is essentially governed by the Dirac equation and charge carriers mimic relativistic particles with zero mass and an effective "speed of light" c* ~10^6m/s. Our studies of graphene - a single atomic layer of carbon - have revealed a variety of unusual phenomena characteristic of two-dimensional (2D) Dirac fermions. In particular, we have observed that a) the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; b) graphene's conductivity never falls below a minimum value corresponding to the conductance quantum e^2/h, even when carrier concentrations tend to zero; c) the cyclotron mass m of massless carriers with energy E in graphene is described by equation E =mc*^2; and d) Shubnikov-de Haas oscillations in graphene exhibit a phase shift of pi due to Berry's phase.

cond-mat.mes-hall↗

arXiv2005

Direct Observation of Vortex Shells and Magic Numbers in Mesoscopic Superconducting Disks

We have visualised and studied vortex configurations in mesoscopic superconducting disks using the Bitter decoration technique. For a broad range of vorticities L the circular geometry is found to result in the formation of concentric shells of vortices. From images obtained on disks of different sizes in a range of magnetic fields we were able to trace the evolution of vortex states and identify stable and metastable configurations. Furthermore, quantitative analysis of shell filling with increasing L allowed us to identify 'magic' numbers corresponding to the appearance of consecutive new shells.

cond-mat.supr-con↗

arXiv2005

Two Dimensional Electron and Hole Gases at the Surface of Graphite

We report high-quality two-dimensional (2D) electron and hole gases induced at the surface of graphite by the electric field effect. The 2D carriers reside within a few near-surface atomic layers and exhibit mobilities up to 15,000 and 60,000 cm2/Vs at room and liquid-helium temperatures, respectively. The mobilities imply ballistic transport at micron scale. Pronounced Shubnikov-de Haas oscillations reveal the existence of two types of carries in both 2D electron and hole gases.

cond-mat.mes-hall↗

arXiv2005

Two Dimensional Atomic Crystals

We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals, including single layers of boron nitride, graphite, several dichalcogenides and complex oxides. These atomically-thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality and are continuous on a macroscopic scale.

cond-mat.mtrl-sci↗

arXiv2004

Room-temperature electric field effect and carrier-type inversion in graphene films

The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a semiconductor device and, consequently, change an electric current through it. As the semiconductor industry is nearing the limits of performance improvements for the current technologies dominated by silicon, there is a constant search for new, non-traditional materials whose properties can be controlled by electric field. Most notable examples of such materials developed recently are organic conductors [1], oxides near a superconducting or magnetic phase transition [2] and carbon nanotubes [3-5]. Here, we describe another system of this kind - thin monocrystalline films of graphite - which exhibits a pronounced electric field effect, such that carriers in the conductive channel can be turned into either electrons or holes. The films remain metallic, continuous and of high quality down to a few atomic layers in thickness. The demonstrated ease of preparing such films of nearly macroscopic sizes and of their processing by standard microfabrication techniques, combined with submicron-scale ballistic transport even at room temperature, offer a new two-dimensional system controllable by electric-field doping and provide a realistic promise of device applications.

cond-mat.mes-hall↗

arXiv2004

Electric Field Effect in Atomically Thin Carbon Films

We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.

cond-mat.mtrl-sci↗

arXiv2004

Long-range nonlocal flow of vortices in narrow superconducting channels

We report a new nonlocal effect in vortex matter, where an electric current confined to a small region of a long and sufficiently narrow superconducting wire causes vortex flow at distances hundreds of inter-vortex separations away. The observed remote traffic of vortices is attributed to a very efficient transfer of a local strain through the one-dimensional vortex lattice, even in the presence of disorder. We also observe mesoscopic fluctuations in the nonlocal vortex flow, which arise due to "traffic jams" when vortex arrangements do not match a local geometry of a superconducting channel.

cond-mat.supr-con↗

arXiv2003

Subatomic movements of a domain wall in the Peierls potential

Movements of individual domain walls in a ferromagnetic garnet were studied with angstrom resolution. The measurements reveal that domain walls can be locked between adjacent crystallographic planes and propagate by distinct steps matching the lattice periodicity. Domain walls are found to be weakly mobile within valleys of the atomic washboard but become unexpectedly flexible on Peierls ridges, where they can be kept in a bi-stable state by ac magnetic field. We describe the latter observation in terms of a single magnetic kink propagating along a domain wall.

cond-mat.mes-hall↗

arXiv2002

Multiple flux jumps and irreversible behavior of thin Al superconducting rings

An experimental and theoretical investigation was made of flux jumps and irreversible magnetization curves of mesoscopic Al superconducting rings. In the small magnetic field region the change of vorticity with magnetic field can be larger than unity. This behavior is connected with the existence of several metastable states of different vorticity. The intentional introduction of a defect in the ring has a large effect on the size of the flux jumps. Calculations based on the time-dependent Ginzburg-Landau model allows us to explain the experimental results semi-quantitatively.

cond-mat.supr-con↗

arXiv2000

Non-Quantized Penetration of Magnetic Field in the Vortex State of Superconductors

As first pointed out by Bardeen and Ginzburg in the early sixties, the amount of magnetic flux carried by vortices depends on their distance to the sample edge and can be smaller than one flux quantum, f0 = h/2e. In bulk superconductors, this reduction of flux becomes negligible already at submicron distances from the edge but, in thin films, the effect may survive at much larger distances. In the absence of any experimental observation, such flux reduction is perceived to be an exotic or unimportant effect, and it is often assumed that magnetic field enters type-II superconductors in units of f0. Here we report the measurements of the amount of flux associated with the entrance of individual vortices in a superconducting film and show that the flux that they bring in, always differs substantially from f0. We have observed vortices that carry as little as 0.001 f0 as well as seemingly "negative vortices" whose penetration leads to the expulsion of magnetic field. We distinguish two phenomena responsible for non-quantized flux penetration: the finite-size effect and a non-linear screening of magnetic field in the presence of a surface barrier. The latter effect has previously not been considered but is likely to cause non-quantized penetration in many cases.

cond-mat.supr-con↗

arXiv2000

Fine Structure in Magnetization of Individual Fluxoid States

Each time a vortex enters or exits a small superconductor, a different fluxoid state develops. We have observed splitting and sharp kinks on magnetization curves of such individual states. The features are the manifestation of first and second order transitions, respectively, and reveal the existence of distinct vortex phases within a superconducting state with a fixed number of fluxoids. We show that the kinks indicate the merger of individual vortices into a single giant vortex while the splitting is attributed to transitions between different arrays of the same number of vortices.

cond-mat.supr-con↗

arXiv1998

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains.

cond-mat.mes-hall↗

arXiv1997

Magnetization of mesoscopic superconducting discs

Solutions of Ginzburg-Landau eqns. coupled with three dimensional Maxwell eqns. reveal intriguing magnetic response of small superconducting particles, qualitatively different from the two dimensional approximation but in agreement with recent experiments. Depending on the radius and thickness first or second order transitions are found for the normal to superconducting state. For a sufficient large radius of the disc several transitions in the superconducting phase are obtained which correspond to different angular momentum giant vortex states. The incorporation of the finite thickness in the calculation is crucial in order to obtain agreement with the position and the size of these jumps, and the line shape and magnitude of the magnetization curves.

cond-mat.supr-con↗