arXiv subjects

A. K. Raychaudhuri

Publications and source records attributed to A. K. Raychaudhuri.

At least 19 recordsLinked to original sources

arXiv2025

Observation of a Novel Charge Density Wave Superstructure in Monolayer 1T-$VS_{2}$ at Room Temperature and its Evolution in Multilayers

Spontaneous formation of charge density wave (CDW) superstructures in monolayers (MLs) of a two-dimensional (2D) crystal lattice is fundamental in understanding its complex quantum states. We report a successful top-down liquid phase exfoliation and stamp transfer process (LPESTP) to create ML VS\textsubscript{2}, undergoing a CDW transition at room temperature. Using high-resolution transmission electron microscopy (HRTEM) and electron diffraction (ED), we observed the coexistence of 1T and 2H polymorphic phases in VS\textsubscript{2} at room temperature, and only the 1T phase undergoes CDW transition. We discovered a novel incommensurate CDW superstructure ($\sqrt{7} \times \sqrt{7}$) R19.1\textsuperscript{o} in ML 1T-VS\textsubscript{2}. With an increase in the number of layers, the CDW order changes to a commensurate ($2 \times 2\times 1$) superstructure. Using angle-dependent photoelectron spectroscopy and TEM, we have shown that vanadium atoms self-intercalate as V\textsuperscript{3+} ions in multilayer VS\textsubscript{2} and are responsible for the evolution of the CDW superstructure from the incommensurate ($\sqrt{7} \times \sqrt{7}$) R 19.1\textsuperscript{o} to the commensurate ($2\times2\times1$) order. We also report the observation of novel Moir\'e superlattices in twisted bilayer 1T-VS\textsubscript{2} flakes with trapped CDW superstructure of the monolayer. The density functional theory (DFT) calculation performed on ML 1T-VS\textsubscript{2} show that the observed ($\sqrt{7} \times \sqrt{7}$) R 19.1\textsuperscript{o} CDW superstructure has lower energy compared to that of the pristine undistorted ML and the CDW instability is driven by formation of strong soft-phonon modes. Our findings provide an important platform for understanding the evolution of CDW superstructures in 1T-VS\textsubscript{2} with layer numbers and V self-intercalation.

cond-mat.mtrl-sci↗

arXiv2021

Spectroscopic comprehension of Mott-Hubbard insulator to negative charge transfer metal transition in LaNi_{x}V_{1-x}O_{3} thin films

The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films, divulging the absence of carrier doping into the system. The valence band spectrum is observed to comprise of incoherent structure owing to the localized V 3d band along with the coherent structure at Fermi level. With increase in Ni concentration, the weight of the coherent feature increases, which divulges its origin to the Ni 3d-O 2p hybridized band. The shift of Ni 3d-O 2p hybridized band towards higher energy in Ni doped LaVO_{3} films compared to the LaNiO_{3} film endorses the modification in ligand to metal charge transfer (CT) energy. The Ni doping in Mott-Hubbard insulator LaVO_{3} leads to the closure of Mott-Hubbard gap by building of spectral weight that provides the delocalized electrons for conduction. A transition from bandwidth control Mott-Hubbard insulator LaVO_{3} to negative CT metallicity character in LaNiO_{3} film is observed. The study reveals that unlike in Mott-Hubbard insulators where the strong Coulomb interaction between the 3d electrons decides the electronic structure of the system, CT energy can deliver an additional degree of freedom to optimize material properties in Ni doped LaVO_{3} films.

cond-mat.str-el↗

arXiv2020

Observation of decoupling of electrons from phonon bath close to a correlation driven metal-insulator transition

We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a large noise arise from small isolated pockets of nanometric metallic phases (estimated size $\sim$ 15-20 nm) within the insulating phase with the charging energy as the control parameter.

cond-mat.str-el↗

arXiv2020

Broad Band Single Germanium Nanowire Photodetectors with Surface Oxide Controlled High Optical Gain

We have investigated photoconductive properties of single Germanium Nanowires(NWs)of diameter less than 100 nm in the spectral range of 300 to 1100 nm showing ultra large peak Responsivity in excess of 10^{7}AW^{-1}.The NWs were grown by Vapor Liquid Solid method using Au nanoparticle as catalyst. In this report we discuss the likely origin of the ultra large responsivity that may arise from a combination of various physical effects which are a): Ge and GeO_{x} interface states which act as scavengers of electrons from the photo-generated pairs,leaving the holes free to reach the electrodes,b) Schottky barrier at the metal and NW interface which gets lowered substantially due to carrier diffusion in contact region and (c) photodetector length being small (approximately few μm), negligible loss of photogenerated carriers due to recombination at defect sites. We have observed from power dependence of the optical gain that the gain is controlled by trap states. We find that the surface of the nanowire has presence of a thin layer of GeO_{x} (as evidenced from HRTEM study) which provide interface states. It is observed that these state play a crucial role to provide a radial field for separation of photogenerated electron and hole pair which in turn leads to very high effective photoconductive gain that reaches a very high at low illumination density.

physics.app-ph↗

arXiv2020

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

cond-mat.str-el↗

arXiv2020

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.

cond-mat.mtrl-sci↗

arXiv2020

Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current.

physics.app-ph↗

arXiv2020

Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy

We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was done from 300 K to above 700 K, a temperature range in which thermal conductivity of single NWs has been explored rarely. The thermal conductivity of Ge NWs (grown by vapor liquid solid mechanism), at around room temperature were observed to lie in the range 1.8 to 4.2 W/m.K for diameters between 50 to 110 nm. The thermal conductivity at a given temperature was found to follow a linear dependence on NW diameter, suggesting that the low magnitude of k(T) is determined by diffused scattering of phonons from the surface of NWs that reduces it severely from its bulk value. k(T) shows approximately 1/T behavior which arises from the Umklapp processes. The quantitative estimation of errors arising from the Optothermal measurement and methods to mitigate them has been discussed. We also suggest a quick way to estimate approximately the thermal conductivity of Ge and Si NWs using the above observations.

physics.app-ph↗

arXiv2017

First principles study of bimetallic Ni$_{13-n}$Ag$_n$ nano-clusters ($n =$ 0$-$13) : Structural, mixing, electronic and magnetic properties

Using spin polarized density functional theory (DFT) based calculations, combined with ab-initio molecular dynamics simulation, we carry out a systematic investigation of the bimetallic Ni$_{13-n}$Ag$_n$ nano clusters, for all compositions. This includes prediction of the geometry, mixing behavior, and electronic properties. Our study reveals a tendency towards formation of a core-shell like structures, following the rule of putting Ni in high coordination site and Ag in low coordination site. Our calculations predict negative mixing energies for the entire composition range, indicating mixing to be favored for the bimetallic small sized Ni-Ag clusters, irrespective of the compositions. The magic composition with the highest stability is found for the NiAg$_{12}$ alloy cluster. We investigate the microscopic origin of core-shell like structure with negative mixing energy, in which the Ni-Ag inter-facial interaction is found to play role. We also study the magnetic properties of the Ni-Ag alloy clusters. The Ni dominated magnetism, consists of parallel alignment of Ni moments while the tiny moments on Ag align in anti-parallel to Ni moments. The hybridization with Ag environment causes reduction of Ni moment.

cond-mat.mtrl-sci↗

arXiv2013

Electric field driven destabilization of the insulating state in nominally pure LaMnO3

We report an electric field driven destabilization of the insulating state in nominally pure LaMnO3 single crystal with a moderate field which leads to a resistive state transition below 300 K. The transition is between the insulating state in LaMnO3 and a high resistance bad metallic state that has a temperature independent resistivity. The transition occurs at a threshold field (Eth) which shows a steep enhancement on cooling. While at lower temperatures the transition is sharp and involves large change in resistance but it softens on heating and eventually absent above 280K. When the Mn4+ content is increased by Sr substitution up to x=0.1, the observed transition though observable in certain temperature range, softens considerably. The observation has been explained as bias driven percolation type transition between two coexisting phases, where the majority phase is a charge and orbitally ordered polaronic insulating phase and the minority phase is a bad metallic phase. The mobile fraction f of the bad metallic phase deduced from the experimental data follows an activated kinetics with the activation energy nearly equal to 200 meV and the prefactor fo is a strong function of the field that leads to a rapid enhancement of f on application of field leading to the resistive state transition. We suggest likely scenarios for such co-existing phases in nominally pure LaMnO3 that can lead to the bias driven percolation type transition.

cond-mat.str-el↗

arXiv2012

Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite

In this paper we have created a strain driven single crystal like ferromagnetic insulating (FMI) state in a PLD grown thin film of low doped LCMO(X = 0.15)on NGO(100) substrate and make a thorough study of strain effects on the electric and magnetic transport of this film. We have studied and compared the FMI state, ferromagnetic transition temperature (TC), ferromagnetic insulating temperature (TFMI) and the resistivity of the film in details with bulk single crystals of X=0.18 to 0.22 doping region. We have found that TFMI and the localisation length of the carriers are increased and there is also a decrease in the Coulomb gap. The magneto transport behavior of the film also differs from the bulk single crystals and the magnetoresistance of the sample is nearly 20 to 75% with the application of the applied field(0 to 10 T) and it falls up to 5 to 40% below a certain temperature and the TC of the film increases to higher temperature with the increasing field. The film also shows anisotropic magnetoresistance as large as 20% depending on applied magnetic field direction.

cond-mat.str-el↗

arXiv2012

Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges

We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0 A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed by two back-to-back Schottky diodes model, which shows the predominant photocurrent in the device arising from the photoconductive response of the nanowires.

cond-mat.mtrl-sci↗

arXiv2012

Electrical transport properties of nanostructured ferromagnetic perovskite oxides La_0.67Ca_0.33MnO_3 and La_0.5Sr_0.5CoO_3 at low temperatures (5 K > T >0.3 K) and high magnetic field

We report a comprehensive study of the electrical and magneto-transport properties of nanocrystals of La_0.67Ca_0.33MnO_3 (LCMO) (with size down to 15 nm) and La_0.5Sr_0.5CoO_3 (LSCO) (with size down to 35 nm) in the temperature range 0.3 K to 5 K and magnetic fields upto 14 T. The transport, magnetotransport and non-linear conduction (I-V curves) were analysed using the concept of Spin Polarized Tunnelling in the presence of Coulomb blockade. The activation energy of transport, Δ, was used to estimate the tunnelling distances and the inverse decay length of the tunnelling wave function (χ) and the height of the tunnelling barrier (Φ_B). The magnetotransport data were used to find out the magnetic field dependences of these tunnelling parameters. The data taken over a large magnetic field range allowed us to separate out the MR contributions at low temperatures arising from tunnelling into two distinct contributions. In LCMO, at low magnetic field, the transport and the MR are dominated by the spin polarization, while at higher magnetic field the MR arises from the lowering of the tunnel barrier by the magnetic field leading to an MR that does not saturate even at 14 T. In contrast, in LSCO, which does not have substantial spin polarization, the first contribution at low field is absent, while the second contribution related to the barrier height persists. The idea of inter-grain tunnelling has been validated by direct measurements of the non-linear I-V data in this temperature range and the I-V data was found to be strongly dependent on magnetic field. We made the important observation that a gap like feature (with magnitude ~ E_C, the Coulomb charging energy) shows up in the conductance g(V) at low bias for the systems with smallest nanocrystal size at lowest temperatures (T < 0.7 K). The gap closes as the magnetic field and the temperature are increased.

cond-mat.mes-hall↗

arXiv2011

Electric field induced reversible control of visible photoluminescence from ZnO nanoparticles

Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and polyethylene oxide-lithium perchlorate, a solid polymer electrolyte. The photoluminescence intensity shows nearly 100% modulation with a response time less than 30 seconds, when the bias is applied at the electrolyte-electrode. A model is proposed for the observed effect that is based on defect states of ZnO and the band bending at the ZnO-electrolyte interface that can be changed by the applied bias.

cond-mat.mtrl-sci↗

arXiv2011

Structural and Optical properties of Zn(1-x)MgxO nanocrystals obtained by low temperature method

In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route. In the low temperature synthesis route it was possible to reach x = 0.17 without segregation of Mg rich phase. The exact chemical composition has been established by quantitative analysis. Rietveld analysis of the XRD data confirms the Wurzite structure and a continuous compaction of the lattice (in particular the c-axis parameter) as x increases. There is an enhancement of the strain in the lattice as the Mg is substituted. The bandgap also gets enhanced as x is increased and reaches a value of 4eV for x = 0.17. From the TEM and the XRD data it has been concluded that when there is a phase segregation for x > 0.17, there is a shell of Mg(OH)2 on the ZnO. The absorption also shows persistence of the excitoinc absorption on Mg substitution. The nanocrystals show near band edge photo luminescence (PL) at room temperature which shows blue shift on Mg incorporation. In addition to the near band edge emission the ZnO and Zn1-xMg xO alloy nanocrystals show considerable emission in the blue-green region at wavelength of ~550 nm. We find that the relative intensity of the green emission increases with the Mg concentration for very low x (upto x = 0.05) and on further increase of the Mg concentration there is a sharp decrease of relative intensity of the green emission eventually leading to a complete quenching of blue emission. It is concluded that due to phase segregation (for x \geq 0.20), the formation of the shell of Mg(OH)2 on the ZnO leads to quenching of the green emission .However, this shell formation does not have much effect on the near band edge PL.

cond-mat.mtrl-sci↗

arXiv2011

Phonon dynamics of Zn(Mg,Cd)O alloy nanostructures and their phase segregation

In this paper we report phonon dynamics in chemically synthesized Zn1- xMgxO (0\leqx\leq0.07) and Zn1-yCdyO (0\leqy\leq0.03) alloy nanostructures of sizes ~10 nm using non-resonant Raman and Fourier Transformed Infrared Spectroscopy (FTIR). Substitution by Mg makes the unit cell compact while Cd substitution leads to unit cell expansion. On alloying, both A1(LO) and E1(LO) mode of wurtzite ZnO show blue shift for Zn1-xMgxO and red shift for Zn1-yCdyO alloy nanostructures due to mass defect and volume change induced by the impurity atoms. Significant shift has been observed in E1(LO) mode for Zn1-xMgxO (73 cm-1 for x = 0.07) and Zn1-yCdyO (17 cm-1 for y = 0.03) nanostructures. The variation in Zn(Mg,Cd)-O bond length determined from the blue (red) shift of IR bands on alloying with Mg (Cd) is consistent with their respective ionic sizes and the structural changes predicted by X-ray diffraction study. However, on progressive alloying one can detect phase segregation (due to presence of interstitial Mgand Cd ions) in the alloy nanostructures for relatively higher Mg and Cd concentrations. This is confirmed by the gradual absence of the characteristic IR and Raman bands of wurtzite ZnO near 400-600 cm-1 as well as by X-Ray and TEM studies.

cond-mat.mtrl-sci↗

arXiv2011

Structure and optical properties of Cd substituted ZnO (Zn1-xCdxO) nanostructures synthesized by high pressure solution route

We report synthesis of Cd substituted ZnO nanostructures (Zn1-xCdxO with x upto \approx .09) by high pressure solution growth method. The synthesized nanostructures comprise of nanocrystals that are both particles (~ 10-15 nm) and rods which grow along (002) direction as established by Transmission electron microscope (TEM) and X-ray diffraction (XRD) analysis. Rietveld analysis of the XRD data shows monotonous increase of the unit cell volume with the increase of Cd concentration. The optical absorption as well as the photoluminescence (PL) shows red shift on Cd substitution. The line width of the PL spectrum is related to the strain inhomogenity and it peaks in the region where the CdO phase separates from the Zn1-xCdxO nanostructures. The time resolved photoemission showed a long lived (~10ns) component. We propose that the PL behavior of the Zn1-xCdxO is dominated by strain in the sample with the redshift of the PL linked to the expansion of the unit cell volume on Cd substitution.

cond-mat.mtrl-sci↗

arXiv2011

Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole doped manganite

We report the observation of a large 1/f noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of La0.80Ca0.20MnO3 which manifests hopping conductivity in presence of a Coulomb gap. The temperature dependent noise magnitude shows a deep within the FMI state, there is a sharp freeze out of the noise magnitude with temperature on cooling. As the material enters the FMI state, the noise becomes non-Gaussian as seen through probability density function and second spectra. It is proposed to arise from charge fluctuations in a correlated glassy phase of the polaronic carriers which develop in these systems as reported in recent simulation studies.

cond-mat.mtrl-sci↗