arXiv subjects

A. Kam

Publications and source records attributed to A. Kam.

16 recordsLinked to original sources

arXiv2015

The visibility study of S-T$_+$ Landau-Zener-Stückelberg oscillations without applied initialization

Probabilities deduced from quantum information studies are usually based on averaging many identical experiments separated by an initialization step. Such initialization steps become experimentally more challenging to implement as the complexity of quantum circuits increases. To better understand the consequences of imperfect initialization on the deduced probabilities, we study the effect of not initializing the system between measurements. For this we utilize Landau-Zener-Stückelberg oscillations in a double quantum dot circuit. Experimental results are successfully compared to theoretical simulations.

cond-mat.mes-hall↗

arXiv2014

Long-range spin transfer in triple quantum dots

Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hopping between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while the centre one remains always empty. Superpositions are formed and both charge and spin are exchanged between the outermost dots. Detection of the process is achieved via the observation of narrow resonances, insensitive to the transport Pauli spin blockade.

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arXiv2013

Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, the spin blockade becomes bipolar with current strongly suppressed in both bias directions and (b) that a new quantum coherent mechanism becomes relevant. Within this mechanism charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other without involving the centre site. Our results have implications in future complex nano-spintronic circuits.

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arXiv2013

Coherent control of three-spin states in a triple quantum dot

Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stückelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated.

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arXiv2013

Quantum interference and phonon-mediated back-action in lateral quantum dot circuits

Spin qubits have been successfully realized in electrostatically defined, lateral few-electron quantum dot circuits. Qubit readout typically involves spin to charge information conversion, followed by a charge measurement made using a nearby biased quantum point contact. It is critical to understand the back-action disturbances resulting from such a measurement approach. Previous studies have indicated that quantum point contact detectors emit phonons which are then absorbed by nearby qubits. We report here the observation of a pronounced back-action effect in multiple dot circuits where the absorption of detector-generated phonons is strongly modified by a quantum interference effect, and show that the phenomenon is well described by a theory incorporating both the quantum point contact and coherent phonon absorption. Our combined experimental and theoretical results suggest strategies to suppress back-action during the qubit readout procedure.

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arXiv2012

Non-linear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the $r_{xx}$ oscillations transform into diamond-shaped patterns with different slopes corresponding to odd and even filling factors. The diamond-shaped features at odd filling factors can be used as a probe to determine spin energy gaps. A Zero Current Anomaly (ZCA) which manifests itself as a narrow dip in the $r_{xx}(\Idc)$ characteristics at zero current, is also observed. The ZCA effect strongly depends upon temperature, vanishing above 1 K while the transport diamonds persist to higher temperatures. The transport diamonds and ZCA are fully reproduced in a higher mobility GaAs/AlGaAs Hall bar structure confirming that these phenomena reflect intrinsic properties of two-dimensional systems.

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arXiv2012

Enhanced charge detection of spin qubit readout via an intermediate state

We employ an intermediate excited charge state of a lateral quantum dot device to increase the charge detection contrast during the qubit state readout procedure, allowing us to increase the visibility of coherent qubit oscillations. This approach amplifies the coherent oscillation magnitude but has no effect on the detector noise resulting in an increase in the signal to noise ratio. In this letter we apply this scheme to demonstrate a significant enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg oscillations between singlet S and triplet T+ two-spin states.

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arXiv2012

Quantum interference between three two-spin states in a double quantum dot

Qubits based on the singlet (S) and the triplet (T0, T+) states in double quantum dots have been demonstrated in separate experiments. It has been recently proposed theoretically that under certain conditions a quantum interference could occur from the interplay between these two qubit species. Here we report experiments and modeling which confirm these theoretical predictions and identify the conditions under which this interference occurs. Density matrix calculations show that the interference pattern manifests primarily via the occupation of the common singlet state. The S/T0 qubit is found to have a much longer coherence time as compared to the S/T+ qubit.

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arXiv2010

Few-electron quantum dots in III-V ternary alloys: role of fluctuations

We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements.

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arXiv2010

Quantum Hall induced currents and the magnetoresistance of a quantum point contact

We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are correlated at Landau-level filling factors nu=1, 2 and 4, which demonstrates the common origin of the effects. Temperature and non-linear sweep rate dependences are observed to be similar for the two effects. Furthermore, features in the noise of the induced currents, caused by breakdown of the quantum Hall effect, are observed to have clear correlations between the two measurements. In contrast, there is a distinct difference in the way that the induced currents decay with time when the sweeping field halts at integer filling factor. We attribute this difference to the fact that, while both effects are sensitive to the magnitude of the induced current, the QPC resistance is also sensitive to the proximity of the current to the QPC split-gate. Although it is clearly demonstrated that induced currents affect the electrostatics of a QPC, the reverse effect, the QPC influencing the induced current, was not observed.

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arXiv2010

The 3D transport diagram of a triple quantum dot

We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model.

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arXiv2009

Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures

The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.

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arXiv2009

Time Resolved Control of Electron Tunnelling Times and Single-shot Spin Readout in a Quantum Dot

We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibrate the tunnel barriers. We make use of this to implement the Delft protocol for single shot single spin readout in a device designed to form a triple quantum dot potential. We are able to tune the tunnelling times over around three orders of magnitude. We obtain a spin relaxation time of 300 microseconds at 10T.

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arXiv2009

Silencing noisy 2DEG wafers

Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.

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arXiv2009

A Tuneable Few Electron Triple Quantum Dot

In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is important as well as quantum information applications involving electron spin qubits. We demonstrate tuning strategies for achieving required resonant conditions such as quadruple points where all three quantum dots are on resonance. We find that in such a device resonant conditions at specific configurations are accompanied by novel charge transfer behaviour.

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arXiv2006

Coherent Transport Through a Quadruple Point in a Few Electron Triple Dot

A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experiments have been performed on this device. In this short paper we present data and confirm that transport is coherent by observing a Pi phase shift in magneto-conductance oscillations as one passes through the quadruple point.

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