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arXiv · 0907.2903

Silencing noisy 2DEG wafers

L. Gaudreau·A. Kam·P. Zawadzki·G. Granger·S. Studenikin·J. Kycia·J. Mason·A. S. Sachrajda
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Abstract

Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.

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L. Gaudreau, A. Kam, P. Zawadzki, G. Granger, S. Studenikin, J. Kycia, J. Mason, A. S. Sachrajda. 2009-07-16. Silencing noisy 2DEG wafers. https://arxiv.org/abs/0907.2903

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