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A. Kravets

Publications and source records attributed to A. Kravets.

8 recordsLinked to original sources

Thermally-controlled interlayer exchange and field-induced anisotropy in synthetic antiferromagnets

Interlayer exchange in synthetic antiferromagnets incorporating thin paramagnetic spacers can be controlled thermally. The spacer provides an additional ferromagnetic contribution that renormalizes the otherwise temperature-independent interlayer coupling. As a result, the system shows antiferromagnetic alignment at high temperatures and ferromagnetic alignment at low temperatures. This behavior is observed in Fe(2 nm)/Cr(0.4 nm)/Fe$_{17.5}$Cr$_{82.5}$(0.9 nm)/Cr(0.4 nm)/Fe(2 nm) multilayers with the inner spacer Fe$_{17.5}$Cr$_{82.5}$ paramagnetic at and above room temperature, and is shown to be due to the spacer being significantly magnetically polarized on lowering the temperature toward its Curie point. Although the Fe layers lack intrinsic magnetocrystalline anisotropy, the magnetization reversal demonstrates a field-induced uniaxial anisotropy of antiferromagnetic character. The resulting reversal process resembles that of a metamagnet with a spin-flip transition.

cond-mat.mes-hall

Nonlinear spin dynamics across Néel phase transition in ferromagnetic/antiferromagnetic multilayers

We observe strongly nonlinear spin dynamics in ferro-/antiferro-magnetic multilayers, controlled by the number of bilayers in the system, layer thicknesses, as well as temperature, peaking in magnitude near the Néel point of the antiferromagnetic layers just above room temperature. Well above the Néel transition, the individual ferromagnetic layers are exchange decoupled and resonate independently. As the temperature is lowered toward the Néel point, the ferromagnetic proximity effect through the thin antiferromagnetic spacers transforms the system into a weakly coupled macrospin chain along the film normal, which exhibits pronounced standing spin-wave resonance modes, comparable in intensity to the uniform resonance in the ferromagnetic layers. These findings are supported by our micromagnetic simulations showing clear spin-wave profiles with precessional phase lag along the macrospin chain. Well below the Néel transition, the FeMn layers order strongly antiferromagnetically and exchange-pin the ferromagnetic layers to effectively make the multilayer one macrospin. The appearance and intensity of the high-frequency spin-wave modes can thus be conveniently controlled by thermal gating the multilayer. The nonlinearity in the microwave response of the demonstrated material can approach 100\%, large compared to nonlinear materials used in e.g. optics, with second-harmonic generation often at the single percentage level.

cond-mat.mes-hall

Spin waves in Co$_2$FeGe films

The dynamic magnetic properties of Full Heusler alloy thin films of Co$_2$FeGe, grown on MgO (001) substrates under different thermal conditions, were investigated. Brillouin light scattering and ferromagnetic resonance measurements revealed that depositing at room temperature followed by annealing at 300 deg C for 1 hour produces the best results for maximizing magnetization, exchange stiffness, and minimizing spin-dynamic dissipation in the films, which are desirable characteristics for high-speed spintronic devices. Additionally, strong hybridization of spin waves in the Damon-Eshbach geometry was observed, which is attractive for applications in magnonic signal processing circuits.

cond-mat.mtrl-sci

Ferromagnetic resonance in Y3AlFe4O12 garnets

Spin dynamics in Al-substituted yttrium iron garnets is investigated using broadband ferromagnetic resonance measurements in the temperature range T=200-360 K. Using the measured data, the resonance field and linewidth as well as their temperature dependence are determined, with implications for the uniformity and overall quality of the samples prepared via different chemical fabrication routes. These key parameters governing the spin dynamics in the material are important for its applications in high-speed spintronic and magnonic devices.

cond-mat.mtrl-sci

Zero-Shot Class Unlearning in CLIP with Synthetic Samples

Machine unlearning is a crucial area of research. It is driven by the need to remove sensitive information from models to safeguard individuals' right to be forgotten under rigorous regulations such as GDPR. In this work, we focus on unlearning within CLIP, a dual vision-language encoder model trained on a massive dataset of image-text pairs using contrastive loss. To achieve forgetting we expand the application of Lipschitz regularization to the multimodal context of CLIP. Specifically, we ensure the smoothing of both visual and textual embeddings associated with the class intended to be forgotten relative to the perturbation introduced to the samples from that class. Additionally, importantly, we remove the necessity for real forgetting data by generating synthetic samples through gradient ascent maximizing the target class. Our forgetting procedure is iterative, where we track accuracy on a synthetic forget set and stop when accuracy falls below a chosen threshold. We employ a selective layers update strategy based on their average absolute gradient value to mitigate over-forgetting. We validate our approach on several standard datasets and provide thorough ablation analysis and comparisons with previous work.

cs.CV

Fast barrier-free switching in synthetic antiferromagnets

We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be $ \sim 100 $ pJ, 10-100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.

cond-mat.mes-hall

Ultrafast inertia-free switching of double magnetic tunnel junctions

We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We obtain the timing and amplitude parameters for the current and field pulses needed to achieve 100 ps range \emph{inertia-free} switching under \emph{least-power} dissipation. The considered method does not rely on the stochastics of thermal agitation of the magnetic nanoparticle typically accompanying spin-torque switching. The regime of ultimate switching speed-efficiency found in this work is promising for applications in high-performance nonvolatile memory.

cond-mat.mes-hall

Temperature-controlled interlayer exchange coupling in strong/weak ferromagnetic multilayers: a thermo-magnetic Curie-switch

We investigate a novel type of interlayer exchange coupling based on driving a strong/weak/strong ferromagnetic tri-layer through the Curie point of the weakly ferromagnetic spacer, with the exchange coupling between the strongly ferromagnetic outer layers that can be switched, on and off, or varied continuously in magnitude by controlling the temperature of the material. We use Ni-Cu alloy of varied composition as the spacer material and model the effects of proximity-induced magnetism and the interlayer exchange coupling through the spacer from first principles, taking into account not only thermal spin-disorder but also the dependence of the atomic moment of Ni on the nearest-neighbor concentration of the non-magnetic Cu. We propose and demonstrate a gradient-composition spacer, with a lower Ni-concentration at the interfaces, for greatly improved effective-exchange uniformity and significantly improved thermo-magnetic switching in the structure. The reported magnetic multilayer materials can form the base for a variety of novel magnetic devices, such as sensors, oscillators, and memory elements based on thermo-magnetic Curie-switching in the device.

cond-mat.mtrl-sci