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arXiv · 2312.16540

Ultrafast inertia-free switching of double magnetic tunnel junctions

Yu. Dzhezherya·P. Polynchuk·A. Kravets·V. Korenivski
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Abstract

We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We obtain the timing and amplitude parameters for the current and field pulses needed to achieve 100 ps range \emph{inertia-free} switching under \emph{least-power} dissipation. The considered method does not rely on the stochastics of thermal agitation of the magnetic nanoparticle typically accompanying spin-torque switching. The regime of ultimate switching speed-efficiency found in this work is promising for applications in high-performance nonvolatile memory.

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Yu. Dzhezherya, P. Polynchuk, A. Kravets, V. Korenivski. 2023-12-27. Ultrafast inertia-free switching of double magnetic tunnel junctions. https://arxiv.org/abs/2312.16540

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