arXiv subjects

A. Palenzona

Publications and source records attributed to A. Palenzona.

52 records · Page 3Linked to original sources

arXiv2005

Enhanced flux pinning in neutron irradiated MgB2

We study the effect of neutron irradiation on the critical current density Jc of isotopically pure polycrystalline Mg11B2 samples. For fluences in the range 1017-1018 cm-2, Jc is enhanced and its dependence on magnetic field is significantly improved: we demonstrate that, in this regime, point-like pinning centers are effectively introduced in the system proportionally to the neutron fluence. Instead, for larger fluences, a strong suppression of the critical temperature accompanied by a decrease of both the upper critical field Bc2 and Jc is found.

cond-mat.supr-con↗

arXiv2004

Neutron Irradiation of Mg11B2 : From the Enhancement to the Suppression of Superconducting Properties

In this letter we present the effect of neutron irradiation up to fluences of 3.9 1019 n/cm2 on the superconducting properties of MgB2. In order to obtain a disorder structure homogeneously distributed, the experiment was carried out on bulk samples prepared with the 11B isotope. Up to fluences of 1018 n/cm2 the critical temperature is slightly diminished (36 K) and the superconducting properties are significantly improved; the upper critical field is increased from 13.5 T to 20.3 T at 12 K and the irreversibility field is doubled at 5 K. For larger neutron fluences the critical temperature is suppressed down to 12 K and the superconducting properties come out strongly degraded.

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arXiv2004

Effect of two gaps on the flux lattice internal field distribution: evidence of two length scales from muSR in Mg1-xAlxB2

We have measured the transverse field muon spin precession in the flux lattice (FL) state of the two gap superconductor MgB2 and of the electron doped compounds Mg1-xAlxB2 in magnetic fields up to 2.8T. We show the effect of the two gaps on the internal field distribution in the FL, from which we determine two coherence length parameters and the doping dependence of the London penetration depth. This is an independent determination of the complex vortex structure already suggested by the STM observation of large vortices in a MgB2 single crystal. Our data agrees quantitatively with STM and we thus validate a new phenomenological model for the internal fields.

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arXiv2004

Critical Field of Al-Doped MgB2 Samples: Correlation with the Suppression of Sigma-Band Gap

In this Letter, the study of the effect of Al substitution on the upper critical field, Bc2, in AlxMg1-xB2 samples is presented. We find a straightforward correlation between Bc2 and the sigma-band gap, Delta_sigma, evaluated by point-contact measurements. Up to x=0.2 Bc2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of Delta_sigma. For larger doping we observed the crossover to the dirty regime driven mostly by the strong decrease of Delta_sigma rather than by the increase of the sigma-band scattering rate

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arXiv2003

Critical Field of MGB2 : Crossover from Clean to Dirty Regimes

We have studied the upper critical field, Bc2, in poly-crystalline MgB2 samples in which disorder was varied in a controlled way to carry selectively p and s bands from clean to dirty limit. We have found that the clean regime survives when p bands are dirty and s bands are midway between clean and dirty. In this framework we can explain the anomalous behaviour of Al doped samples, in which Bc2 decreases as doping increases.

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arXiv2003

Thermal properties of MgB2: the effect of disorder on gap amplitudes and relaxation times of p and s bands

We present thermal conductivity and specific heat measurements on MgB2 and Mg-AlB2 samples. Thermal properties have been analysed by using a two-gap model in order to estimate the gap amplitudes, D(0)p and D(0)s and the intra-band scattering rates, Gss and Gpp. As a function of Al doping and disorder D(0)s rapidly decreases, while D(0)p is rather constant. Gss and Gpp are increased by the disorder, being Gpp more affected than Gss.

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arXiv2002

Angular dependence of magnetoresistivity in c-oriented MgB2 thin film

The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle q between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. The obtained results are compared and discussed in the light of the two-band nature of MgB2. A comparison between critical fields in thin films and single crystal is also performed.

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arXiv2002

Thermal conductivity of MgB$_{2}$ in the superconducting state

We present thermal conductivity measurements on very pure and dense bulk samples, as indicated by residual resistivity values as low as 0.5 mW cm and thermal conductivity values higher than 200 W/mK. In the normal state we found that the Wiedemann Franz law, in its generalized form, works well suggesting that phonons do not contribute to the heat transport. The thermal conductivity in the superconducting state has been analysed by using a two-gap model. Thank to the large gap anisotropy we were able to evaluate quantitatively intraband scattering relaxation times of $π$ and $σ$ bands, which depend on the disorder in different way; namely, as the disorder increases, it reduces more effectively the relaxation times of $π$ than of $σ$ bands, as suggested by a recent calculation [1].

cond-mat.supr-con↗

arXiv2002

Two-band effects in transport properties of MgB2

We present resistivity and thermal conductivity measurements on bulk samples, prepared either by a standard method or by a one-step technique. The latter samples, due to their high density and purity, show residual resistivity values as low as 0.5 mW cm and thermal conductivity values as high as 215 W/mK, higher than the single crystal ones. Thermal and electrical data of all the samples are analysed in the framework of the Bloch-Gruneisen equation giving reliable parameter values. In particular the temperature resitivity coefficient, obtained both from resistivity and thermal conductivity, in the dirty sample comes out ten time larger than in the clean ones. This result supports the hypothesis of ref. [1] that p and s bands conduct in parallel, prevailing p conduction in clean samples and s conduction in dirty samples .

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arXiv2002

Significant enhancement of irreversibility field in clean-limit bulk MgB2

Low resistivity ("clean") MgB2 bulk samples annealed in Mg vapor show an increase in upper critical field Hc2(T) and irreversibility field Hirr(T) by a factor of 2 in both transport and magnetic measurements. The best sample displayed Hirr above 14 T at 4.2 K and 6 T at 20 K. These changes were accompanied by an increase of the 40 K resistivity from 1.0 to 18 microohm-cm and a lowering of the resistivity ratio from 15 to 3, while the critical temperature Tc decreased by only 1-2 K. These results point the way to make prepare MgB2 attractive for magnet applications.

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arXiv2001

Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition

The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and stoichiometric MgB2. In both cases, to obtain and crystallize the superconducting phase, an ex-situ annealing in magnesium vapor is needed. The films were characterized by Synchrotron radiation diffraction measurements; the films turned out to be strongly c-oriented, with the c-axis perpendicular to the film surface and an influence of the substrate on crystallographic parameters is observed. Resisivity measurements with the magnetic field perpendicular and parallel directions to the film surface evidenced an anisotropic upper critical field behavior. The Hc2 ratios (h) resulted in the range 1.2-1.8; this difference will be discussed also in comparison with the literature data.

cond-mat.supr-con↗

arXiv2001

Transport properties of c-oriented MgB2 thin films grown by Pulsed Laser Deposition

The electronic anisotropy in MgB2, which arises from its layered crystal structure is not completely clear until now. High quality c-oriented films offer the opportunity of studying such property. MgB2 thin films were deposited by using two methods both based on room temperature precursor deposition (by Pulsed Laser Ablation) and ex-situ annealing in Mg atmosphere. The two methods differ for the starting targets: stoichiometric MgB2 in one case and Boron in the other. The two films presented in this paper are grown by means of the two techniques on MgO substrates and are both c-oriented; they present TC values of 31.5 and 37.4 K respectively. Upper critical field measurements, up to 9T, with the magnetic field in perpendicular and parallel directions in respect to the film surface evidenced anisotropy ratios of 1.8 and 1.4 respectively. In this paper we will discuss this remarkable and surprising difference also in comparison with the literature data.

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arXiv2001

Transport properties of MgB2

In this paper we present the resistivity, the Seebeck effect, and the thermal conductivity measurements on a MgB2 sintered sample. Such transport properties highlight the role of the junctions between the grains to a different extent. In particular, the temperature dependence of resistivity may be explained with the assumption that grain boundaries have a resistance, independent of temperature, in series with the resistance of grains. Also the behaviour of the Seebeck effect, as long as the scattering at the grain boundaries is elastic, is not affected at all by granularity. Thus, the thermopower can be a useful tool to provide information on the electronic structure. On the other hand, the grain boundary resistance affects the thermal conductivity strongly, masking the superconducting transition completely.

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arXiv2001

Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy

MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and 100angstrom along c-axis) but the general resistivity behavior and the remarkable extension of the irreversible region confirm that the grains boundaries are not barriers for supercurrents. Upper critical field measurements with the magnetic field perpendicular and parallel with respect to the film surface evidenced a field anisotropy ratio of 1.8. The Hc2 values are considerably higher with respect to the bulk ones, namely when the field lies in the basal plane, and the field-temperature phase diagram for the two magnetic field orientations suggest the possibility of strongly enhancing the pinning region by means of texturing.

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arXiv2001

Electron transport properties of MgB2 in the normal state

We have measured the resistivity and the Seebeck coefficient of a MgB2 sintered sample. The temperature dependence of resistivity is fitted well by a generalized Bloch-Gruneisen equation with a Debye temperature of 1050 K. The Seebeck coefficient is given by the sum of a diffusive and a phonon drag term and the behavior in the temperature region $% Tc<T<0.1Θ_{R}$ follows a relationship $AT+BT^{3}$ where the two terms are proportional to the electron and to the phonon specific heat, respectively. The phonon drag term, here emphasized for the first time, is rather large, indicating a strong electron-phonon interaction. The diffusive term is positive and increases with Al doping. The comparison of the experimental values with calculations including precise electronic structure suggests that $σ$ bands give the main contribution to the Seebeck effect.

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arXiv2001

Magnetic characterization of sintered MgB2 samples: effect of the substitution or doping with Li, Al and Si

Powdered and sintered MgB2 samples have been characterized through magnetic measurements performed from T = 5 K up to few degrees above the transition temperature of about 39 K. We found that the sintered samples behave as well-connected bodies, showing no trace of granularity. In order to obtain the critical current density value Jc the Critical State Model has been therefore employed in a straightforward way. With the aim either to decrease the electron mean free path or to increase its Jc we have attempted to introduce defects in the MgB2 structure by different procedures: substitution of Lithium on the Magnesium site and doping of the precursor Boron powders with Aluminum and Silicon. The best result in terms of Jc has been achieved by Silicon doping that, moreover, does not significantly affect the transition temperature.

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