arXiv subjects

A. T. Neal

Publications and source records attributed to A. T. Neal.

2 recordsLinked to original sources

arXiv2012

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D

In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from 3D to 4D structure has been developed and summarized. The successful fabrication of InGaAs lateral and vertical NW arrays has led to 4x increase in MOSFET drive current. The top-down technology developed in this paper has opened a viable pathway towards future low-power logic and RF transistors with high-density III-V NWs.

cond-mat.mes-hall↗

arXiv2012

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.

cond-mat.mes-hall↗