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arXiv · 1212.4227

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

J. J. Gu·X. W. Wang·H. Wu·J. Shao·A. T. Neal·M. J. Manfra·R. G. Gordon·P. D. Ye
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Abstract

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/μm and gm = 1.74mS/μm have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.

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J. J. Gu, X. W. Wang, H. Wu, J. Shao, A. T. Neal, M. J. Manfra, R. G. Gordon, P. D. Ye. 2012-12-18. 20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec. https://arxiv.org/abs/1212.4227

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