arXiv subjects

A. Tejeda

Publications and source records attributed to A. Tejeda.

17 recordsLinked to original sources

arXiv2026

The MuFusE Large-Volume Diamond Anvil Cell for Exploring Muon-Catalyzed Fusion at Higher Pressures and Temperatures

A new large-volume diamond anvil cell (DAC) has been developed for the Muon-catalyzed Fusion ($\mu$CF) Experiment (MuFusE), enabling the compression and heating of deuterium-tritium (d-t) mixtures to pressures and temperatures needed to advance $\mu$CF research. The MuFusE DAC achieves the large sample volumes necessary for high-precision fusion measurements while integrating cryogenic loading, all-metal sealing, and flexible bellows to maintain a secure environment during cell compression. Combined with remote pneumatic actuation and secondary containment, the DAC safely managed a 25 Ci tritium inventory while providing a clear optical path for in situ measurements of sample pressure and composition via laser spectroscopy. Utilizing 5 mm diameter diamond anvils oriented in the path of a high-intensity muon beam, the apparatus achieved a stable sample volume of 19.2 mm$^3$ at liquid density, pressures up to 933 MPa and temperatures up to 400 K - benchmarks that significantly exceed previously reported limits for static d-t targets.

physics.ins-det↗

arXiv2026

Sliding Charge Density Wave observed through Band Structure

An incommensurate CDW may have the ability to slide, i.e., to generate an excess of current when the system is submitted to an external field. Sliding phenomenon is closely related to deformation of the periodic lattice distortion associated to the CDW. In principle, however, the sliding state can also be observed through the band structure. Here we show that broken symmetry in k-space is observed by Angle-Resolved Photoemission Spectroscopy (ARPES) in the sliding regime of TbTe$_3$, which could be consistent with theoretical predictions.

cond-mat.str-el↗

arXiv2022

CDW signatures in the electronic structure of LaSb2 at 13 K and metal-insulator transition

Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. ARPES measurements at 200 K show a metallic system while it appears to be semiconducting at 13 K, at odds with existing resistivity measurements. At 13 K, ARPES shows the band folding of the inner Fermi surface pockets, with considerable spectral weight on the folded band. We find a nesting vector at q = 0.25$\pm$0.02 Å -1. In addition, we observe Umklapps of other bands due to the onset of the new periodicity, together with a semiconducting behavior in the whole reciprocal space. Calculations demonstrate that the folded band is associated with the La-Sb layer and that in-plane distortion is the most probable structural modification in the system, probably affecting the whole unit cell.

cond-mat.mtrl-sci↗

arXiv2021

Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$

Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\barΓ$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model.

cond-mat.str-el↗

arXiv2019

Edge states and ballistic transport in zig-zag graphene ribbons: the role of SiC polytypes

Zig-zag edge graphene ribbons grown on 6H-SiC facets are ballistic conductors. It has been assumed that zig-zag graphene ribbons grown on 4H-SiC would also be ballistic. However, in this work we show that SiC polytype matters; ballistic graphene ribbons only grow on 6H SiC. 4H and 4H-passivated ribbons are diffusive conductors. Detailed photoemmision and microscopy studies show that 6H-SiC sidewalls zig-zag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations, In contrast, 4H-SiC zig-zag ribbons are strongly bonded to the SiC; severely distorting the ribbon's $π$-bands. $\text{H}_2$-passivation of the 4H ribbons returns them to a metallic state but show no evidence of edge states.

cond-mat.mes-hall↗

arXiv2015

Semiconducting graphene from highly ordered substrate interactions

While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.

cond-mat.mtrl-sci↗

arXiv2012

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.

cond-mat.mes-hall↗

arXiv2012

High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation

Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalization of the bare electronic band structure of graphene usually observed in Graphite and Graphene Intercalation Compounds.

cond-mat.mtrl-sci↗

arXiv2011

Silicon intercalation into the graphene-SiC interface

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

cond-mat.mes-hall↗

arXiv2010

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.

cond-mat.mes-hall↗

arXiv2010

Experimental study of the incoherent spectral weight in the photoemission spectra of the misfit cobaltate [Bi2Ba2O4][CoO2]2

Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi level. We show that one can use their relative weight to estimate self-consistently the quasiparticle weight Z, which turns out to be very small Z=0.15 +/- 0.05. We suggest this method could be a reliable way to study the evolution of correlations in cobaltates and for comparison with other strongly correlated systems.

cond-mat.str-el↗

arXiv2010

New electronic orderings observed in cobaltates under the influence of misfit periodicities

We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different doping and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad stripes with width as large as 80Å. The anomalous evolution of the FS area at low dopings is consistent with the localization of a fraction of the electrons. We propose that this is a new form of electronic ordering, induced by the potential of the stacked layers (RS or Na in NaxCoO2) when the FS becomes smaller than the Brillouin Zone of the stacked structure.

cond-mat.str-el↗

arXiv2010

Structure and electronic properties of epitaxial graphene grown on SiC

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.

cond-mat.mtrl-sci↗

arXiv2009

First direct observation of a nearly ideal graphene band structure

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

cond-mat.mtrl-sci↗

arXiv2007

Direct observation of strong correlations near the band insulator regime of Bi misfit cobaltates

We present the first angle-resolved photoemission (ARPES) measurement of Fermi Surface in the "misfit" cobaltate [Bi2Ba2O4].[CoO2]~2. This compound contains the same triangular Co planes as Na cobaltates, but in a different 3D environment. Our data establish the similarity of their electronic structure. We propose that the peculiar lineshape of all cobaltates is of the "peak-dip-hump" type, due to strong many-body effects. We detect a progressive transfer of spectral weight from the quasiparticle feature near Ef to a broad hump in misfit phases where Ba is replaced by Sr or Ca. This indicates stronger many-body interactions in proximity of the band insulator regime, which we attribute to the presence of unusual magnetic excitations.

cond-mat.str-el↗

arXiv2006

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.

cond-mat.mtrl-sci↗

arXiv2001

How different Fermi surface maps emerge in photoemission from Bi2212

We report angle-resolved photoemission spectra (ARPES) from the Fermi energy ($E_F$) over a large area of the ($k_x,k_y$) plane using 21.2 eV and 32 eV photons in two distinct polarizations from an optimally doped single crystal of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of accord between theory and experiment and clarify how myriad Fermi surface (FS) maps emerge in ARPES under various experimental conditions. The energy and polarization dependences of the ARPES matrix element help disentangle primary contributions to the spectrum due to the pristine lattice from those arising from modulations of the underlying tetragonal symmetry and provide a route for separating closely placed FS sheets in low dimensional materials.

cond-mat.supr-con↗