Silicon intercalation into the graphene-SiC interface

F. Wang; K. Shepperd; J. Hicks; M. S. Nevius; H. Tinkey; A. Tejeda; A. Taleb-Ibrahimi; F. Bertran; P. Le F`evre; D. B. Torrance; P. First; W. A. de Heer; A. A. Zakharov; E. H. Conrad

doi:10.1103/physrevb.85.165449

arXiv · 1111.2946

Silicon intercalation into the graphene-SiC interface

F. Wang·K. Shepperd·J. Hicks·M. S. Nevius·H. Tinkey·A. Tejeda·A. Taleb-Ibrahimi·F. Bertran·P. Le F`evre·D. B. Torrance·P. First·W. A. de Heer·A. A. Zakharov·E. H. Conrad

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Abstract

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

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F. Wang, K. Shepperd, J. Hicks, M. S. Nevius, H. Tinkey, A. Tejeda, A. Taleb-Ibrahimi, F. Bertran, P. Le F`evre, D. B. Torrance, P. First, W. A. de Heer, A. A. Zakharov, E. H. Conrad. 2011-11-12. Silicon intercalation into the graphene-SiC interface. https://doi.org/10.1103/physrevb.85.165449

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