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A. Wacker

Publications and source records attributed to A. Wacker.

41 records · Page 3Linked to original sources

Transport in semiconductor superlattices: from quantum kinetics to terahertz-photon detectors

Semiconductor superlattices are interesting for two distinct reasons: the possibility to design their structure (band-width(s),doping, etc.) gives access to a large parameter space where different physical phenomena can be explored. Secondly, many important device applications have been proposed, and then subsequently successfully fabricated. A number of theoretical approaches has been used to describe their current-voltage characteristics, such as miniband conduction, Wannier-Stark hopping, and sequential tunneling. The choice of a transport model has often been dictated by pragmatic considerations without paying much attention to the strict domains of validity of the chosen model. In the first part of this paper we review recent efforts to map out these boundaries, using a first-principles quantum transport theory, which encompasses the standard models as special cases. In the second part, focusing in the mini-band regime, we analyze a superlattice device as an element in an electric circuit, and show that its performance as a THz-photon detector allows significant optimization, with respect to geometric and parasitic effects, and detection frequency. The key physical mechanism enhancing the responsivity is the excitation of hybrid Bloch-plasma oscillations.

cond-mat↗

Inelastic quantum transport in superlattices: success and failure of the Boltzmann equation

Electrical transport in semiconductor superlattices is studied within a fully self-consistent quantum transport model based on nonequilibrium Green functions, including phonon and impurity scattering. We compute both the drift velocity-field relation and the momentum distribution function covering the whole field range from linear response to negative differential conductivity. The quantum results are compared with the respective results obtained from a Monte Carlo solution of the Boltzmann equation. Our analysis thus sets the limits of validity for the semiclassical theory in a nonlinear transport situation in the presence of inelastic scattering.

cond-mat.mes-hall↗

Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.

cond-mat↗

Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices

Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the doping density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low and high field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a new type of tunable GHz oscillator based on semiconductor superlattices.

cond-mat↗

Current-voltage characteristic, stability, and self-sustained current oscillations in resonant-tunneling n-doped semiconductor superlattices

We review the statics and dynamics of electric-field domains on doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence we determine the intervals of doping on which self-sustained current oscillations may appear under dc voltage bias. We have also studied the influence of doping, boundary condition and length of the superlattice on the self-sustained oscillations. Our study shows that there are bistability regions where either self-sustained current oscillations or steady states are reached depending on the initial condition. For a wide bias interval, the self-sustained oscillations are due to the formation, motion and recycling of electric-field domain walls inside the superlattice. There are biases (typically in the region of bistability) for which the strength of the high and low field domains changes periodically in time while the domain wall remains almost pinned on a few quantum wells.

cond-mat↗