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A. Yu. Aladyshkin

Publications and source records attributed to A. Yu. Aladyshkin.

At least 19 recordsLinked to original sources

Period-dependent suppression of Fourier peaks for topography images: Analysis of periodicity of triple-step arrays on vicinal Si(h h m) surfaces

Reliable determination of the periodicity of multiatomic steps on high-Miller-index vicinal surfaces is often complicated by (i) the presence of relatively narrow terraces tilted at large angles relative to the scanning plane, and (ii) unavoidable distortions in the lateral direction resulting from creep and improper calibration of a piezo scanner. We argue that the period of the triple-step arrays on vicinal Si(5\,5\,6) and Si(5 5 7) single-crystal wafers can be determined from raw scanning tunneling microscopy data, without preliminary corrections, with precision approaching the interatomic distance. We demonstrate that the intensity of the Fourier peaks of the differential maps, derived from raw topography images by the difference-of-Gaussians approach, strongly depends on the period of the ordered triple-step arrays. This suppression of the ninth Fourier peak indicates that the regular array of triple steps has a period of $18b=5.99$ nm in projection onto the Si(1 1 1) terrace plane, where $b=0.333$ nm is the distance between atomic rows of the $1\times 1$ lattice in the $[\bar{1}\,\bar{1}\,2]$ direction. This means that the nominally (5\,5\,7)-oriented Si wafers may correspond locally to the Si(8 8 11) orientation. The method can be applied to the precise analysis of other vicinal surfaces with narrow and wide terraces containing an integer number of Si(1 1 1)$7\times 7$ unit cells.

cond-mat.mtrl-sci

Atomically precise triple-step staircase on a vicinal silicon surface: Is it Si(5 5 7), Si(7 7 10) or Si(8 8 11)?

Scanning tunneling microscopy studies of periodic arrays of triple steps fabricated on single-crystalline Si(5 5 7) wafers demonstrate several possible atomic structures of consecutive steps and Si(1 1 1) terraces maintaining the same periodicity on micrometer-sized surface areas. Detailed analysis of the atomically resolved data reveals the formation of Si(8 8 11) triple-step staircase with a period of 18b=5.99 nm in projection onto the terrace plane, where b=0.333 nm is the distance between atomic rows for the Si(1 1 1)1x1 surface. Schematic models for several possible configurations of either 7x7 or 5x5-reconstructed terraces and triple steps are proposed.

cond-mat.mtrl-sci

Microscopic structure of the vortex cores in granular niobium: A coherent quantum puzzle

When macroscopic quantum condensates -- superconductors, superfluids, cold atoms and ions, polaritons etc. -- are put in rotation, a quantum vortex lattice forms inside. In homogeneous type-II superconductors, each vortex has a tiny core where the superconducting gap $\Delta(r)$ is known to smoothly vanish towards the core centre on the scale of the coherence length $\xi$. The cores host quantized quasiparticle energy levels known as Caroli-de Gennes-Matricon (CdGM) bound states [Caroli {\it et al.,} Phys. Lett. v. 9, 307 (1964)]. In pure materials, the spectrum of the low-lying CdGM states has the characteristic level spacing $\sim \Delta_0^2/E_F$, where $E_F$ is the Fermi energy and $\Delta_0$ is the bulk gap. In disordered ones, the CdGM states shift and broaden due to scattering. Here, we show, both experimentally and theoretically, that the situation is completely different in granular Nb films, which are commonly used in superconducting electronics. In these films, in which the grains are smaller than $\xi$, the gap $\Delta$ in the quasiparticle spectrum reduces towards the vortex core centres by discrete jumps at the grain boundaries. The bound states adapt to the local environment and appear at unexpectedly high energies. Both $\Delta(r)$ and bound states form a puzzle-like spatial structure of the core, elements of which are whole grains. Our discovery shakes up the established understanding of the quantum vortex and encourages a reconsideration of the vortex motion and pinning mechanisms in granular superconductors.

cond-mat.supr-con

Magnetic force microscopy versus scanning quantum-vortex microscopy: Probing pinning landscape in granular niobium films

We provide an overview of the methodology and fundamental principles associated with newly developed experimental technique -- scanning quantum-vortex microscopy [Hovhannisyan et al., Commun. Mater., vol. 6, 42 (2025)]. This approach appears promising for experimental studies of vortex pinning phenomena in superconducting films and nanodevices. In particular, we studied the magnetic properties of magnetron-sputtered niobium (Nb) films by low-temperature magnetic force microscopy. As the temperature approaches the superconducting critical temperature, the pinning potential caused by structural defects weakens; consequently, the attractive interaction between the magnetic tip of the cantilever and a single-quantum vortex begins to dominate. In this scenario the magnetic probe is capable of trapping a vortex during the scanning process. Because the dragged vortex continues interacting with structural defects, it serves as an efficient nano-probe to explore pinning potentials and visualize grain boundaries in granular Nb films, achieving resolutions (30 nm) comparable to the superconducting coherence length.

cond-mat.supr-con

Oscillatory Bias Dependence of Visible Height of Monatomic Pb(111) Steps: Consequence of Quantum-Size Effect for Thin Metallic Films

Local structural and electronic properties of thin Pb(111) films grown on Si(111)7x7 surface are experimentally studied by means of low-temperature scanning tunneling microscopy and spectroscopy (STM/STS). It is shown that the visible height $h$ of the monatomic step on Pb(111) surface demonstrates oscillatory dependence on bias voltage $U$. The period of these oscillations coincides with the period of the oscillations of both local tunneling conductance ($dI/dU$) and the rate of the STM tip displacement ($dZ/dU$) at sweeping $U$. It points to the fact that the observed oscillations of the visible height of monatomic Pb(111) step are controlled by coherent resonant tunneling of electrons from the STM tip to Pb(111) film through quantum-well states in thin Pb(111) film. We argue that the maximum and minimum visible heights of the monatomic Pb(111) step correspond to the bias voltages, at which local densities of states for the Pb(111) terraces of different thicknesses are equal.

cond-mat.mes-hall

Effective removal of global tilt from topography images of vicinal surfaces with narrow terraces

The main feature of vicinal surfaces of crystals characterized by the Miller indices (hhm) is rather small width (less than 10 nm) and substantially large length (more than 200 nm) of atomically-flat terraces on sample surface. This makes difficult to apply standard methods of image processing and correct visualization of crystalline lattices at the terraces and multiatomic steps. Here we consider two procedures allowing us to minimize effects of both small-scale noise and global tilt of sample: (i) analysis of the difference of two Gaussian blurred images, and (ii) subtraction of the plane, whose parameters are determined by optimization of the histogram of the visible heights, from raw topography image. It is shown that both methods provide nondistorted images demonstrating atomic structures on vicinal Si(556) and Si(557) surfaces.

cond-mat.mtrl-sci

Visualization of Atomic Structures on Faceted and Nonflat Surfaces by the Difference-of-Gaussians Approach

Detailed analysis of scanning probe microscopy (SPM) data acquired for faceted and non-flat surfaces is usually complicated due to the presence of a large number of surface areas tilted by large/variable angles relative to the scanning plane. As a consequence, standard methods of elimination of global or local slopes by either a plane subtraction or numerical differentiation seem to be ineffective. We demonstrate that a simple difference-of-Gaussians procedure provides output data corresponding to projection of a considered surface onto the scanning plane without undesirable contrast modifications. This method allows us to suppress small-scale noise, minimize effects of finite slopes in the SPM images along both fast and slow scanning directions and removes surface ripples without active participation of the operator. This method can be applied for fast on-the-fly visualization of experimental data, and for more detailed analysis, including high-precision determination of lattice parameters and angles between translation vectors for surface reconstruction of different terraces or surface domains. In order to estimate geometrical distortions introduced by our procedure, we compare the results obtained by the difference-of-Gaussians approach for the tilted surfaces with direct image rotation in 3D space.

cond-mat.mtrl-sci

Field-Emission Resonances in Thin Metallic Films: Nonexponential Decay of the Tunneling Current as a Function of the Sample-to-Tip Distance

Field-emission resonances (FERs) for two-dimensional Pb(111) islands grown on \mbox{Si(111)7$\times$7} surfaces were studied by low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) in a broad range of tunneling conditions with both active and disabled feedback loop. These FERs exist at quantized sample-to-tip distances $Z^{\,}_n$ above the sample surface, where $n$ is the serial number of the FER state. By recording the trajectory of the STM tip during ramping of the bias voltage $U$ (while keeping the tunneling current $I$ fixed), we obtain the set of the $Z^{\,}_n$ values corresponding to local maxima in the derived $dZ/dU(U)$ spectra. This way, the continuous evolution of $Z^{\,}_n$ as a function of $U$ for all FERs was investigated by STS experiments with active feedback loop for different $I$. Complementing these measurements by current-distance spectroscopy at a fixed $U$, we could construct a 4-dimensional $I-U-Z-dZ/dU$ diagram, that allows us to investigate the geometric localization of the FERs above the surface. We demonstrate that (i) the difference $\delta Z^{\,}_n=Z^{\,}_{n+1}-Z^{\,}_n$ between neighboring FER lines in the $Z-U$ diagram is independent of $n$ for higher resonances, (ii) the $\delta Z^{\,}_{n}$ value decreases as $U$ increases; (iii) the quantized FER states lead to the \emph{periodic} variations of $\ln I$ as a function of $Z$ with periodicity $\delta Z$; (iv) the periodic variations in the $\ln I - Z$ spectra allows to estimate the absolute height of the tip above the sample surface. Our findings contribute to a deeper understanding on how the FER states affect various types of tunneling spectroscopy experiments and how they lead to a non-exponential decay of the tunneling current as a function of $Z$ at high bias voltages in the regime of quantized electron emission.

cond-mat.mes-hall

Observation of hidden parts of dislocation loops in thin Pb films by means of scanning tunneling spectroscopy

Local electronic properties of quasi-two-dimensional Pb(111) islands with screw dislocations of different types on their surfaces were experimentally studied by means of low-temperature scanning tunneling microscopy and spectroscopy in the regime of constant current. A comparison of the topography map, the maps of tunneling current variation and the differential tunneling conductance acquired simultaneously allows one to visualize the hidden parts of the dislocation loops under the sample surface. We demonstrate that two closely-positioned screw dislocations with the opposite Burgers vectors can either (i) connect to each other by the sub-surface dislocation loop or (ii) generate independent hidden edge dislocation lines which run towards the perimeter of the Pb island. In addition, we found a screw dislocation, which does not produce outcoming sub-surface dislocation loops. Screw dislocations and the hidden dislocations lines are the source of the non-quantized variation of the local thickness of the Pb terraces, affecting the local electronic properties.

cond-mat.mes-hall

Quantum-well and modified image-potential states in thin Pb(111) films: an estimate for the local work function

Quantum-confined electronic states such as quantum-well states (QWS) inside thin Pb(111) films and modified image-potential states (IPS) above the Pb(111) films grown on Si(111)7$\times$7 substrate were studied by means of low-temperature scanning tunnelling microscopy (STM) and spectroscopy (STS) in the regime of constant current $I$. By plotting the position of the $n-$th emission resonances $U^{\,}_n$ versus $n^{2/3}$ and extrapolating the linear fit for the dependence $U^{\,}_n(n^{2/3})$ in the high-$n$ limit towards $n=0$, we estimate the local work function for the Pb(111) film: $W\simeq 3.8\pm 0.1\,$eV. We experimentally demonstrate that modifications of the shape of the STM tip can change the number of the emission peaks associated with the resonant tunnelling via quantized IPS levels for the same Pb terrace; however it does not affect the estimate of the local work function for the flat Pb terraces. We observe that the maxima in the spectra of the differential tunnelling conductance $dI/dU$ related to both the QWS and the modified IPS resonances are less pronounced if the STM tip becomes more blunt.

cond-mat.mes-hall

Tunneling interferometry and measurement of thickness of ultrathin metallic Pb(111) films

Spectra of the differential tunneling conductivity for ultrathin lead films grown on Si(111)7x7 single crystals with a thickness from 9 to 50 monolayers have been studied by low-temperature scanning tunneling microscopy and spectroscopy. The presence of local maxima of the tunneling conductivity is typical for such systems. The energies of maxima of the differential conductivity are determined by the spectrum of quantum-confined states of electrons in a metallic layer and, consequently, the local thickness of the layer. It has been shown that features of the microstructure of substrates, such as steps of monatomic height, structural defects, and inclusions of other materials covered with a lead layer, can be visualized by bias-modulation scanning tunneling spectroscopy.

cond-mat.mes-hall

Nonuniform quantum-confined states and visualization of hidden defects in thin Pb(111) films

The spatial distribution of the differential conductance for ultrathin Pb films grown on Si(111)7x7 substrate is studied by means of low-temperature scanning tunneling microscopy and spectroscopy. The formation of the quantum--confined states for conduction electrons and, correspondingly, the appearance of local maxima of the differential tunneling conductance are typical for Pb films; the energy of such states is determined mainly by the local thickness of Pb film. We demonstrate that the magnitude of the tunneling conductivity within atomically flat terraces can be spatially nonuniform and the period of the small-scale modulation coincides with the period of Si(111)7x7 reconstruction. For relatively thick Pb films we observe large-scale inhomogeneities of the tunneling conductance, which reveal itself as a gradual shift of the quantized levels at a value of the order of 50 meV at distances of the order of 100 nm. We believe that such large-scale variations of the tunneling conductance and, respectively, local density of states in Pb films can be related to presence of internal defects of crystalline structure, for instance, local electrical potentials and stresses.

cond-mat.mes-hall

Peculiarities of superconducting properties of thin superconductor-normal metal bilayer with large ratio of resistivities

We demonstrate, both theoretically and experimentally, that thin dirty superconductor-normal metal bilayer with resistivity of normal metal $\rho_N$ much smaller than normal-state resistivity of superconductor $\rho_S$ has unique superconducting properties. First of all the normal layer provides the dominant contribution to the diamagnetic response of whole bilayer structure in wide temperature interval below the critical temperature due to proximity induced superconductivity. Secondly, the presence of the normal layer may increase the critical current $I_c$ in several times (the effect is not connected with enhanced vortex pinning), provides strong temperature dependence of both $I_c$ and effective magnetic field penetration depth even at temperatures much below the critical one and leads to the diode effect in parallel magnetic field. Besides of general interest we believe that the found results may be useful in construction of different kinds of superconducting detectors.

cond-mat.supr-con

Hybridization and interference effects for localized superconducting states in strong magnetic field

Within the Ginzburg-Landau model we study the critical field and temperature enhancement for crossing superconducting channels formed either along the sample edges or domain walls in thin-film magnetically coupled superconducting - ferromagnetic bilayers. The corresponding Cooper pair wave function can be viewed as a hybridization of two order parameter (OP) modes propagating along the boundaries and/or domain walls. Different momenta of hybridized OP modes result in the formation of vortex chains outgoing from the crossing point of these channels. Near this crossing point the wave functions of the modes merge giving rise to the increase in the critical temperature for a localized superconducting state. The origin of this critical temperature enhancement caused by the wave function squeezing is illustrated for a limiting case of approaching parallel boundaries and/or domain walls. Using both the variational method and numerical simulations we have studied the critical temperature dependence and OP structure vs the applied magnetic field and the angle between the crossing channels.

cond-mat.supr-con

Localization of superconductivity in superconductor-electromagnet hybrids

We investigate the nucleation of superconductivity in a superconducting Al strip under the influence of the magnetic field generated by a current-carrying Nb wire, perpendicularly oriented and located underneath the strip. The inhomogeneous magnetic field, induced by the Nb wire, produces a spatial modulation of the critical temperature T_c, leading to a controllable localization of the superconducting order parameter (OP) wave function. We demonstrate that close to the phase boundary T_c(B_ext) the localized OP solution can be displaced reversibly by either applying an external perpendicular magnetic field B_ext or by changing the amplitude of the inhomogeneous field.

cond-mat.supr-con

Edge superconductivity in Nb thin film microbridges revealed by integral and spatially resolved electric transport

The resistance $R$ vs perpendicular external magnetic field $H$ was measured for superconducting Nb thin--film microbridges with and without microholes [antidots (ADs)]. Well below the transition temperature, integral $R(H)$ measurements of the resistive transition to the normal state on the plain bridge show two distinct regions, which can be identified as bulk and edge superconductivity, respectively. The latter case appears when bulk superconductivity becomes suppressed at the upper critical field $H_{c2}$ and below the critical field of edge superconductivity $H_{c3}\approx 1.7\, H_{c2}$. The presence of additional edges in the AD bridge leads to a different shape of the $R(H)$ curves. We used low-temperature scanning laser microscopy (LTSLM) to visualize the current distribution in the plain and AD bridge upon sweeping $H$. While the plain bridge shows a dominant LTSLM signal at its edges for $H > H_{c2}$ the AD bridge also gives a signal from the inner parts of the bridge due to the additional edge states around the ADs. LTSLM reveals an asymmetry in the current distribution between left and right edges, which confirms theoretical predictions. Furthermore, the experimental results are in good agreement with our numerical simulations (based on the time-dependent Ginzburg--Landau model) yielding the spatial distribution of the order parameter and current density for different bias currents and $H$ values.

cond-mat.supr-con

Domain-wall and reverse-domain superconducting states of a Pb thin-film bridge on a ferromagnetic BaFe_{12}O_{19} single crystal

We report on imaging of the nonuniform superconducting states in a Pb thin film bridge on top of a ferromagnetic BaFe_{12}O_{19} single crystal with a single straight domain wall along the center of the bridge by low-temperature scanning laser microscopy. We have visualized domain wall superconductivity (DWS) close to the critical temperature of Pb, when the Pb film above the domain wall acts as a superconducting path for the current. The evolution of the DWS signal with temperature and the external-field-driven transition from DWS to reverse domain superconductivity was visualized.

cond-mat.supr-con

Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids

We studied experimentally the effect of a stripe-like domain structure in a ferromagnetic BaFe_{12}O_{19} substrate on the magnetoresistance of a superconducting Pb microbridge. The system was designed in such a way that the bridge is oriented perpendicular to the domain walls. It is demonstrated that depending on the ratio between the amplitude of the nonuniform magnetic field B_0, induced by the ferromagnet, and the upper critical field H_{c2} of the superconducting material, the regions of the reverse-domain superconductivity in the H-T plane can be isolated or can overlap (H is the external magnetic field, T is temperature). The latter case corresponds to the condition B_0/H_{c2}<1 and results in the formation of superconductivity above the magnetic domains of both polarities. We discovered the regime of edge-assisted reverse-domain superconductivity, corresponding to localized superconductivity near the edges of the bridge above the compensated magnetic domains. Direct verification of the formation of inhomogeneous superconducting states and external-field-controlled switching between normal state and inhomogeneous superconductivity were obtained by low-temperature scanning laser microscopy.

cond-mat.supr-con